Effects of crystallization conditions on dielectric and ferroelectric properties of PZT thin films

This paper reports studies on dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films crystallized by conventional thermal annealing (CTA) and rapid thermal annealing (RTA) in air, oxygen and nitrogen atmospheres to better understand, control and optimize these properties. The dielectric constant (epsilon) and dissipation factor (tan delta) values, at a frequency of 100 kHz; for film crystallized in air by CTA process, were 358 and 0.039, respectively. Considering the same frequency for film crystallized in air by RTA, these values were 611 and 0.026, respectively. The different dielectric values were justified by a space-charge or interfacial polarization in films, often characterized as Maxwell-Wagner type. This effect was also responsible to dispersion at frequencies above 1 MHz in film crystallized in air by CTA process and film crystallized by RTA in oxygen atmosphere. The film crystallized by RTA under nitrogen atmosphere presented an evident dispersion at frequencies around 100 Hz, characterized by an increase in both epsilon and tan delta. This dispersion was attributed to conductivity effects. The remanent polarization (P-r) and coercive field (E-c) were also obtained for all films. Films obtained from RTA in air presented higher P-r (17.8 muC cm(-2)) than film crystallized from CTA (7.8 muC cm(-2)). As a function of the crystallization atmospheres, films crystallized by RTA in air and nitrogen presented essentially the same P-r values (around 18 muC cm(-2)) but the P-r (3.9 muC cm(-2)) obtained from film crystallized under oxygen atmosphere was profoundly influenced.

Dielectric and fatigue properties of Pb(Zr0.53Ti0.47)O-3 thin films prepared from oxide precursors method

Fatigue is an important problem to be considered if a ferroelectric film is used for non-volatile memory devices. In this phenomena, the remanent polarization and coercive field properties degrades in cycles which increase in hysteresis loops. The reasons have been attributed to different mechanisms such as a large voltage applied on ferroelectric film in every reading process in Ferroelectric Random Access Memory (FeRAM) or memories for digital storage in computer, grain size effects and others. The aim of this work is to investigate the influence of the crystallization kinetics on dielectric and ferroelectric properties of the Pb(Zr0.53Ti0.47)O-3 thin films prepared by an alternative chemical method. Films were crystallized in air on Pt/Ti/SiO2/Si substrates at 700 degrees C for 1 hour, in conventional thermal annealing (CTA), and at 700 degrees C for 1 min and 700 degrees C 5 min, using a rapid thermal annealing (RTA) process. Final films were crack free and presented an average of 750 nm in thickness. Dielectric properties were studied in the frequency range of 100 Hz - 1 MHz. All films showed a dielectric dispersion at low frequency. Ferroelectric properties were measured from hysteresis loops at 10 kHz. The obtained remanent polarization (P-r) and coercive field (E-c) were 3.7 mu C/cm(2) and 71.9 kV/cm respectively for film crystallized by CTA while in films crystallized by RTA these parameters were essentially the same. In the fatigue process, the P, value decreased to 14% from the initial value after 1.3 x 10(9) switching cycles, for film by CTA, while for film crystallized by RTA for 5 min, P, decreased to 47% from initial value after 1.7 x 10(9) switching cycles.

Structural and electrical properties of strontium barium niobate thin films crystallized by conventional furnace and rapid-thermal annealing process

Strontium barium niobate (SBN) thin films were crystallized by conventional electric furnace annealing and by rapid-thermal annealing (RTA) at different temperatures. The average grain size of films was 70 nm and thickness around 500 nm. Using x-ray diffraction, we identified the presence of polycrystalline SBN phase for films annealed from 500 to 700 °C in both cases. Phases such as SrNb2O6 and BaNb2O6 were predominantly crystallized in films annealed at 500 °C, disappearing at higher temperatures. Dielectric and ferroelectric parameters obtained from films crystallized by conventional furnace and RTA presented essentially the same values.

ABO, Lewis, secretor and non-secretor phenotypes in patients infected or uninfected by the Helicobacter pylori bacillus

CONTEXT: Epidemiological studies have demonstrated higher frequencies of the O blood group and the non-secretor phenotype of ABH antigens among patients suffering from peptic ulcers. Since Helicobacter pylori has been established as the main etiological factor in this disease, controversies about the associations of the ABO and Lewis blood group phenotypes and secretor and non-secretor phenotypes in relation to susceptibility towards infection by this bacillus have been presented. OBJECTIVE: To verify the frequencies of ABO, Lewis blood group phenotypes, secretor and non-secretor phenotypes in patients infected or uninfected by H. pylori. DESIGN: Cross-sectional study. SETTING: Outpatient clinic. PARTICIPANTS: One hundred and twenty patients with dyspeptic symptoms who underwent endoscopy. MAIN MEASUREMENTS: ABO and Lewis blood group phenotypes were determined by a standard hemagglutination test and the secretor and non-secretor phenotypes were evaluated by saliva samples using the inhibitor hemagglutination test. RESULTS: The diagnosis of infection, made via breath and urea tests and confirmed using polymerase chain reaction (PCR) in gastric biopsy fragments, showed the presence of H. pylori in 61.7% of the patients and absence in 38.3%. The differences between the frequencies of the ABO blood group phenotypes among infected (A 27.0%; B 12.2%; AB 4.0% and O 56.8%) and uninfected patients (A 58.7%; B 13.0%; AB 4.3% and O 24.0%) were significant. The Lewis blood type, secretor and non-secretor phenotypes showed homogeneous distribution between the groups of patients analyzed. CONCLUSIONS: Our results suggest that the infection of H. pylori can be related to ABO blood groups but not to the Lewis blood group nor to secretor and non-secretor phenotypes. Copyright©2002, Associação Paulista de Medicina.

Fertilização fosfatada no desempenho agronômico e acúmulo de nutrientes do meloeiro

Pós-graduação em Agronomia (Produção Vegetal) - FCAV

Análise da expressão de genes oncogênicos selecionados do KSHV em células endoteliais TIVE-LTC co-cultivadas com células linfóides Jurkat com e sem expressão constitutiva da proteína tat do HIV-1

O Herpesvírus associado ao sarcoma de Kaposi (KSHV), ou Herpesvírus Humano tipo 8 (HHV-8), é o agente etiológico do sarcoma de Kaposi (SK), uma neoplasia maligna vascular. O ciclo biológico do KSHV apresenta duas fases, denominadas ciclo latente e ciclo lítico (ou produtivo). O ciclo latente é marcado pela expressão de um número reduzido de genes virais, com destaque para LANA e vFLIP. No ciclo lítico ocorre a replicação do genoma viral e a produção de novas partículas virais infecciosas; dentre seus principais produtos destacam-se as proteínas Rta, vGPCR e K1. LANA, vFLIP, vGPCR e K1 apresentam propriedades oncogênicas relatadas na literatura, enquanto Rta têm papel importante na regulação da transição entre os ciclos lítico e latente do KSHV. O KSHV é requerido para o desenvolvimento do SK. No entanto, a infecção pelo vírus não é suficiente para o desenvolvimento da doença. Por outro lado, sabe-se que o HIV é um co-fator importante, que favorece o desenvolvimento dessa neoplasia. Sugere-se que a proteína tat do HIV-1 amplifica a infectividade do KSHV, hiper-regulando a expressão de diferentes genes herpesvirais e colaborando para o crescimento e sobrevivência de células endoteliais que compõem as lesões do SK. A fim de contribuir para um melhor entendimento dos efeitos da proteína tat do HIV-1 em células infectadas pelo KSHV, o presente trabalho descreveu eventuais alterações na expressão dos genes codificadores de vFLIP, LANA, vGPCR, Rta e K1 em células endoteliais de veia umbilical humana imortalizada pela telomerase e infectada pelo KSHV a longo prazo (TIVE-LTCs) expostas à proteína tat do HIV-1 produzida por células linfóides T (CLTs) em co-cultivo. Células Jurkat contendo ou não vetor da proteína tat do HIV-1 foram utilizadas como CLTs e co-cultivadas com TIVE-LTCs por 48, 72 e 96 horas. Após extração do RNA total das...(Resumo completo, clicar acesso eletrônico abaixo)

Análise da expressão de genes selecionados do herpevírus associado ao sarcoma de Kaposi (KSHV) em células TIVE-LTC expostas à proteína tat do vírus da imunodeficiência humana (HIV-1)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Disponibilidade de fósforo em solo tratado com resíduos urbanos e industriais sob sistema de plantio direto cultivado com soja

Pós-graduação em Agronomia (Agricultura) - FCA