76 resultados para PARALLEL MAGNETIC-FIELD

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Recent studies have demonstrated that sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field, especially in the case when the magnetic field is parallel to the workpiece surface or intersects it at small angles. In this work we report the results from two-dimensional, particle-in-cell (PIC) computer simulations of magnetic field enhanced plasma immersion implantation system at different bias voltages. The simulations begin with initial low-density nitrogen plasma, which extends with uniform density through a grounded cylindrical chamber. Negative bias voltage is applied to a cylindrical target located on the axis of the vacuum chamber. An axial magnetic field is created by a solenoid installed inside the target holder. A set of simulations at a fixed magnetic field of 0.0025 T at the target surface is performed. Secondary electron emission from the target subjected to ion bombardment is also included. It is found that the plasma density around the cylindrical target increases because of intense background gas ionization by the electrons drifting in the crossed E x B fields. Suppression of the sheath expansion and increase of the implantation current density in front of the high-density plasma region are observed. The effect of target bias on the sheath dynamics and implantation current of the magnetic field enhanced PIII is discussed. (C) 2007 Elsevier B.V. All rights reserved.

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In the present work we study an anisotropic layered superconducting film of finite thickness. The film surfaces are considered parallel to the be face of the crystal. The vortex lines are oriented perpendicular to the film surfaces and parallel to the superconducting planes. We calculate the local field and the London free energy for this geometry. Our calculation is a generalization of previous works where the sample is taken as a semi-infinite superconductor. As an application of this theory we investigate the flux spreading at the super conducting surface.

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The magnetic-field and confinement effects on the Land, factor in AlxGa1-xAs parabolic quantum wells under magnetic fields applied parallel or perpendicular to the growth direction are theoretically studied. Calculations are performed in the limit of low temperatures and low electron density in the heterostructure. The g factor is obtained by taking into account the effects of non-parabolicity and anisotropy of the conduction band through the 2 x 2 Ogg-McCombe Hamiltonian, and by including the cubic Dresselhaus spin-orbit term. A simple formula describing the magnetic-field dependence of the effective Land, factor is analytically derived by using the Rayleigh-Schrodinger perturbation theory, and it is found in good agreement with previous experimental studies devoted to understand the behavior of the g factor, as a function of an applied magnetic field, in semiconductor heterostructures. Present numerical results for the effective Land, factor are shown as functions of the quantum-well parameters and magnetic-field strength, and compared with available experimental measurements.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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A finite-difference scheme is used to calculate bound electronic states of an electron in a hydrogen atom subject to a magnetic field. The numerical results are in good agreement with exact results, in the absence of the magnetic field, and with a two-parameters variational calculation, when the magnetic field is applied.

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The behavior of plasma and sheath characteristics under the action of an applied magnetic field is important in many applications including plasma probes and material processing. Plasma immersion ion implantation (PIII) has been developed as a fast and efficient surface modification technique of complex shaped three-dimensional objects. The PIII process relies on the acceleration of ions across a high-voltage plasma sheath that develops around the target. Recent studies have shown that the sheath dynamics is significantly affected by an external magnetic field. In this work we describe a two-dimensional computer simulation of magnetic field enhanced plasma immersion implantation system. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded cylindrical vacuum chamber filled with uniform nitrogen plasma. An axial magnetic field is created by a solenoid installed inside the cylindrical target. The computer code employs the Monte Carlo method for collision of electrons and neutrals in the plasma and a particle-in-cell (PIC) algorithm for simulating the movement of charged particles in the electromagnetic field. Secondary electron emission from the target subjected to ion bombardment is also included. It is found that a high-density plasma region is formed around the cylindrical target due to the intense background gas ionization by the magnetized electrons drifting in the crossed ExB fields. An increase of implantation current density in front of high density plasma region is observed. (C) 2007 Elsevier B.V. All rights reserved.

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Based on the accretion-induced magnetic field decay model, in which a frozen field and an incompressible fluid are assumed, we obtain the following results: (1) an analytic relation between the magnetic field and spin period, if the fastness parameter of the accretion disk is neglected (The evolutionary tracks of accreting neutron stars in the P-B diagram in our model are different from the equilibrium period lines when the influence of the fastness parameter is taken into account.); (2) the theoretical minimum spin period of an accreting neutron star is max(1.1ms (DeltaM/M(circle dot))(-1)R(6)(-5/14) I(45)(M/M(circle dot))(-1/2),1.1ms (M/M(circle dot))(-1/2) R(6)(17/14)), independent of the accretion rate (X-ray luminosity) but dependent on the total accretion mass, DeltaM; however, the minimum magnetic field depends on the accretion rate; (3) the magnetic field strength decreases faster with time than does the period.

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In the present work, we determine the fraction of magnetic field lines that reach the tokamak wall leaving the plasma surrounded by a chaotic layer created by resonant perturbations at the plasma edge. The chaotic layer arises in a scenario where an integrable magnetic field with reversed magnetic shear is perturbed by an ergodic magnetic limiter. For each considered line, we calculate its connection length, i.e. the number of toroidal turns that the field lines complete before reaching the wall. We represent the results in the poloidal section in which the initial coordinates are chosen. We also estimate the radial profile of the fraction of field lines, for different temperatures, whose connection lengths are smaller than the electron collisional mean free path.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Recent studies have demonstrated that the sheath dynamics in plasma immersion ion implantation (PIII) is significantly affected by an external magnetic field. In this paper, a two-dimensional computer simulation of a magnetic-field-enhanced PHI system is described. Negative bias voltage is applied to a cylindrical target located on the axis of a grounded vacuum chamber filled with uniform molecular nitrogen plasma. A static magnetic field is created by a small coil installed inside the target holder. The vacuum chamber is filled with background nitrogen gas to form a plasma in which collisions of electrons and neutrals are simulated by the Monte Carlo algorithm. It is found that a high-density plasma is formed around the target due to the intense background gas ionization by the magnetized electrons drifting in the crossed E x B fields. The effect of the magnetic field intensity, the target bias, and the gas pressure on the sheath dynamics and implantation current of the PHI system is investigated.

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We have measured the effect of an applied magnetic field on the current through thin films of two different organic conjugated polymers that have previously shown to exhibit magnetoresistance, poly(9,9-dioctyl-1,4-fluorenylenevinylene) and poly(9,9-dioctyl-2,7-fluorenylenevinylene). The results show that the magnetic field releases trapped charges from inside the material and enhances the current. We have also performed optical absorption experiments on these polymer films under applied voltage and magnetic field. The results show that the magnetic field produces a change in the optical absorption in the low-energy range associated with deep traps and only under conditions when these traps are likely charged. These two results provide a strong case for the release of trapped charges caused by the magnetic field as being the cause of the magneto resistance in these polymers and possibly in other organic materials where magnetoresistance was recently observed. (c) 2007 Elsevier B.V. All rights reserved.

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We have used the adiabatic hyperspherical approach to determine the energies and wave functions of the ground state and first excited states of a two-dimensional D- ion in the presence of a magnetic field. Using a modified hyperspherical angular variable, potential energy curves are analytically obtained, allowing an accurate determination of the energy levels of this system. Upper and lower bounds for the ground-state energy have been determined by a non-adiabatic procedure, as the purpose is to improve the accuracy of method. The results are shown to be comparable to the best variational calculations reported in the literature.