Estudo, construção e caracterização de diodos orgânicos tipo Schttky

During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

Propriedades ópticas de nanopartículas de halogenetos de cobre preparadas in situ em filmes híbridos de sílica

The sol-gel process is a technique based on the hydrolysis and polycondensation of metal alkoxides have been investigated as an alternative for the preparation of vitreous or glassceramic materials, for allowing the obtaining of high-purity materials at low temperatures, and to obtain hybrid materials with different compositions. When ORMOSILs are doped with nanoparticles, are called nanocomposites, and its functionality arises when electrons confined in scale three-dimensional structures near zero are excited. In principle, such materials exhibit discrete energy level, with peaks in the absorption spectrum. Therefore, the glasses doped semiconductor nanocrystals are important candidates for the preparation of optical filters with sharp cut-off, and are being exploited commercially for coloring glasses. This study evaluates the optical properties presented by hybrid films of silica doped with copper nanoparticles. The matrix was prepared using the alkoxides 3-glycidoxypropyltrimethoxysilane (GPTS) and tetraethylorthosilicate (TEOS) doped with Cu2O and hydrolyzed under reflux conditions in two different acidic conditions (HCl and HBr). After thermal treatment at temperatures between 100 °C and 170 °C and/or under the action of commercial black light radiation, CuCl and CuBr present in the hybrid film are transformed into nanoparticles of CuCl or CuBr. The UV-VIS absorption identified the absorption bands, and its variation

Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

Synthesis and structural characterization of Eu(III)-doped Zn7Sb2O12

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Theoretical analysis of the structural deformation in Mn-doped BaTiO3

An alternative theoretical method to simulate the structural deformation induced by Mn-doping in BaTiO3 is proposed. The periodic quantum-mechanical method is based on density functional theory at B3LYP level. The structural models were obtained from Rietveld refinement of the undoped and Mn doped BaTiO3 X-ray diffraction data. This modelization gives access to the dopant General effect on the electronic structure. In fact, the influence of the doing element itself on the electronic configuration is barely local: therefore, it is not included in the simulation. The simplicity of the model makes it available for working within a wide range of materials.(C) 2004 Published bv Elsevier B.V.

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.

Dependence of La2O3 content on the nonlinear electrical behaviour of ZnO, CoO and Ta2O5 doped SnO2 varistors

The effects of La2O3 on the properties of (Zn, Co, Ta) doped SnO2 varistors were investigated in this study. The samples with different La2O3 concentrations were sintered at 1400 degrees C for 2 h and their properties were characterized by XRD, SEM, I-V and impedance spectroscopy. The grain size was found to decrease from 13 pm to 9 gm with increasing La2O3 content. The addition of rare earth element leads to increase the nonlinear coefficient and the breakdown voltage. The enhancement was expected to arise from the possible segregation of lanthanide ion due to its larger ionic radius to the grain boundaries, thereby modifying its electrical characteristics. Furthermore, the dopants such as La may help in the adsorption of O' to O '' at the grain boundaries characteristics. (c) 2006 Elsevier B.V. All rights reserved.

Characterization and application of PZT/PU and graphite doped PZT/PU composite

Composites, made of lead zirconate titanate (PZT) ceramic powder and castor oil-based polyurethane (PU), were prepared in the film form. The films were obtained in the thickness range 100-300 mum using up to 50/50 vol.% of ceramic. Another composite (PZT/C/PU) was obtained by adding a small amount (1.0 vol.%) of graphite (C) to the PZT/PU composite. By increasing the conductivity of PU-containing graphite, polarization of PZT could be carried out with better efficiency. A comparison of piezo- and pyroelectric activities and spatial distribution of polarization between graphite doped and undoped composites reveal the advantages of using semiconductor filler. These composites were used as sensors to detect acoustic emission (AE). The detection was made using two simulated sources of AE, i.e., ball bearing drop and pencil lead break. PZT/C/PU composite was able to detect both flexural and extensional components of wave vibration. (C) 2002 Elsevier B.V. B.V. All rights reserved.

A theoretical analysis of the TiO2/Sn doped (110) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sri, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.

Influence of the rare-earths oxides doped on the SnO2CoOMnO2Ta2O5 varistor system

The tin dioxide is an n-type semiconductor, which exhibits varistor behavior with high capacity of absorption of energy, whose function is to restrict transitory over-voltages without being destroyed, when it is doped with some oxides. Varistors are used in alternated current fields as well as in continuous current, and it can be applied in great interval of voltages or in great interval of currents. The electric properties of the varistor depend on the defects that happen at the grain boundaries and the adsorption of oxygen. The (98.90-x)%SnO2.0.25%CoO+0.75%MnO2+0.05%Ta2O5+0.05%Tr2O3 systems, in which Tr=La or Nd. Current-voltage measurements were accomplished for determination of the non-linear coefficient were studied. SEM microstructure analysis was made to evaluate the microstructural characteristics of the systems. The results showed that the rare-earth oxides have influenced the electrical behavior presented by the system. (C) 2002 Kluwer Academic Publishers.

Energy-transfer frequency upconversion in neodymium-sensitized praseodymium-doped PbGeO3-PbF2-CdF2 glass excited at 810 nm

Visible frequency upconversion emission through resonant energy-transfer involving neodymium and praseodymium ions in PbGeO3-PbF2-CdF2 glass excited by a semiconductor laser at 8 10 nm is investigated. Luminescence emission centered around 485, 530, 610, and 645 nm, which correspond to the P-3(0) -> H-3(4), P-3(1) + I-1(6) -> H-3(5), P-3(0) -> H-3(6) and P-1(0) -> F-3(2) transitions of praseodymium ions, respectively, are observed. The upconversion excitation of the Pr3+ ions excited-state emitting levels was accomplished by means of an ion-pair interaction involving ground-state absorption, multiphonon relaxation, and excited-state absorption of pump photons at 8 10 nm by the Nd3+ (I-4(9/2) -> H-2(9/2), F-4(5/2); F-4(3/2) -> P-2(1/2)) and direct energy-transfer to Pr3+ ((4)G(11/2) + K-2(11/2), H-3(4) -> I-4(9/2), P-3(1) + I-1(6)). The dependence of the upconversion emission intensity upon the excitation power, and neodymium concentration are also examined. (c) 2004 Elsevier B.V. All rights reserved.

Thermistor behaviour and electric conduction analysis of Ni-doped niobate ferroelectric: the role of multiple beta parameters

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigation on the structural properties in Er-doped PbTiO3 compounds: A correlation between experimental and theoretical results

The aim of this work is to investigate the structural properties of the (Pb1-xErx)TiO3 (PET) powders, with x varying from 0.01 to 0.08, prepared by the polymeric precursor method. Combined X-ray diffraction, Raman spectroscopy and ab initio calculation reveal a diffuse phase-transition of a tetragonal to a cubic phase. The crystalline models built allowed to calculate electronic properties and to analyze the behavior of the doping element in the structure of the material, which are consistent with the experimental results that indicate the beginning of phase-transition from tetragonal to cubic. (C) 2007 Elsevier B.V. All rights reserved.

Extended states in disordered doped polyacetylene chains

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)