A low-voltage wide-swing programmable-gain current amplifier

A CMOS low-voltage, wide-swing continuous-time current amplifier is presented. Exhibiting an open-loop architecture, the circuit is composed of transresistance and transconductance stages built upon triode-operating transistors. In addition to an extended dynamic range, the current gain can be programmed within good accuracy by a rapport involving only transistor geometries and tuning biases. Low temperature-drift on gain setting is then expected.In accordance with a 0.35 mum n-well CMOS fabrication process and a single 1.1 V-supply, a balanced current-amplifier is designed for a programmable gain-range of 6 - 34 dB and optimized with respect to dynamic range. Simulated results from PSPICE and Bsim3v3 models indicate, for a 100 muA(pp)-output current, a THD of 0.96 and 1.87% at 1 KHz and 100 KHz, respectively. Input noise is 120 pArootHz @ 10 Hz, with S/N = 63.2 dB @ 1%-THD. At maximum gain, total quiescent consumption is 334 muW. Measurements from a prototyped amplifier reveal a gain-interval of 4.8-33.1 dB and a maximum current swing of 120 muA(pp). The current-amplifier bandwidth is above 1 MHz.

A thin layer electrochemical cell for disinfection of water contaminated with Staphylococcus aureus

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Characterization of lanthanum-doped bismuth titanate thin films prepared by polymeric precursor method

Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The dielectric constant of highly doped bismuth titanate was equal to 148 while dielectric losses remained low (tan delta = 0.0018), and the films showed well-saturated polarization-electric field curves (2P(r) = 40.6 muC/cm(2) and V-c = 0.99 V). The leakage current densities improve for the lanthanum-doped system. For five-layered BLT films with x = 0.75, a charge storage density of 35 fC/mum(2) and a thickness of 320 nm were found. (C) 2004 Elsevier B.V. All rights reserved.

Effect of boron powder purity on superconducting properties of MgB2

The effect of the properties of starting boron powders on the superconducting properties of MgB2 has been studied. The 92% and 96% pure powders produce lower surface reactivity and larger particle size than the 99% boron powder, as can be seen from Brunauer - Emmett - Teller (BET) and scanning electron microscopy (SEM) results, indicating that the low purity powders cannot be used to archive the same superconducting properties as those of samples made from pure 99% boron powder. However, the purity of 92% and 96% boron powders can be improved by using a simple chemical process, leading to enhanced magnetic critical current densities J(c). From x-ray diffraction (XRD) measurement, oxide impurity has been observed, which might be originated from the B2O3 phase in the boron powders. In order to get high performance MgB2, it is obviously important to control the phase composition and microstructure of amorphous boron starting powders and solid reaction conditions.

Test results of a superconducting fault current limiter using YBCO coated conductor

A single-phase superconducting fault current limiter (SFCL) using a 0.9 m length of YBCO coated conductor (CC) tape was tested in 220 V-60 Hz line for fault current up to 1 kA, operating in 77 K. In this work are presented the IN experimental curves measured under DC and AC currents for the electrical characterization of the CC tape in order to design a low voltage current limiter. The experimental setup is described and the test results are presented for a unit conducting a steady nominal AC current of 50 A and also during the fault time (I to 5 cycles.) the performance of the CC-based SFCL providing the limiting resistance developed in the whole tape length after few milliseconds of the beginning of the fault was analyzed.

Electron field emission from boron doped microcrystalline diamond

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N-B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E-th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm(-2) were obtained using electric fields less than 8 V/mu m. (c) 2007 Elsevier B.V. All rights reserved.

Structure, ferroelectric/magnetoelectric properties and leakage current density of (Bi0.85Nd0.15)FeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of Boron powder purity on superconducting properties of bulk MgB2

In order to study the influence of the amorphous Boron powder on the superconducting properties, MgB2 bulk samples were prepared using 96% and 99% pure commercial Boron powder as well as 92% commercial Boron powder after purification process. The results showed that the original 96% and the purified 92% powders have larger particle size compared to the pure 99% Boron powder, which leads to reduce magnetic critical current densities. In order to get higher performance MgB2, the purified low grade Boron powder need further control of their microstructure such as smaller particle size to enhance flux pinning from the grain boundaries which represent effective pinning centers. © 2007 Elsevier B.V. All rights reserved.

Corrosion properties of Fe-Cr-Nb-B amorphous alloys and coatings

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Electrocatalysis of oxidation of hydrogen on platinum ordered intermetallic phases: Kinetic and mechanistic studies

An experimentally based kinetic and mechanistic study of the hydrogen oxidation reaction (HOR) on platinum and platinum ordered intermetallic materials in acid medium is presented. RDE kinetic data were re-evaluated and complemented by Tafel plots obtained from chronoamperometric measurements. Among the materials evaluated, PtSb and PtSn exhibited markedly improved kinetic current densities and exchange current densities, compared to Pt in the same experimental conditions. It is proposed that the intermetallic phase enhanced the adsorptive characteristic of the surface sites and, as a consequence, improved the kinetics of the adsorption steps (Tafel or Heyrovsky) of the mechanism involved. (c) 2006 Published by Elsevier B.V.

Hidróxido de níquel suportado em carbono: um catalisador de baixo custo para a eletro-oxidação de alcoóis em meio alcalino

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Conventional and microwave sintering of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites: non-ohmic and dielectric properties

The non-ohmic and dielectric properties as well as the dependence on the microstructural features of CaCu(3)Ti(4)O(12)/CaTiO(3) ceramic composites obtained by conventional and microwave sintering were investigated. It was demonstrated that the non-ohmic and dielectric properties depend strongly on the sintering conditions. It was found that the non-linear coefficient reaches values of 65 for microwave-sintered samples and 42 for samples sintered in a conventional furnace when a current density interval of 1-10 mA cm(-2) is considered. The non-linear coefficient value of 65 is equivalent to 1500 for samples sintered in the microwave if a current interval of 5-30 mA is considered as is shortly discussed by Chung et al (2004 Nature Mater. 3 774). Due to a high non-linear coefficient and a low leakage current (90 mu A) under both processing conditions, these samples are promising for varistor applications. The conventionally sintered samples exhibit a higher relative dielectric constant at 1 kHz (2960) compared with the samples sintered in the microwave furnace (2100). At high frequencies, the dielectric constant is also larger in the samples sintered in the conventional furnace. Depending on the application, one or another synthesis methodology is recommended, that is, for varistor applications sintered in a microwave furnace and for dielectric application sintered in a conventional furnace.

Inclusive b-hadron production cross section with muons in pp collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Highly corrosion resistant siloxane-polymethyl methacrylate hybrid coatings

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of commercial mouthwashes on the corrosion resistance of Ti-10Mo experimental alloy

The purpose of this work was to evaluate the effect of three commercial mouthwashes on the corrosion resistance of Ti-10Mo experimental alloy. Experiments were made at 37.0 +/- 0.5 degrees C in a conventional three-compartment double wall glass cell containing commercial mouthwashes. Three mouthwashes with different active ingredients were tested: ( I) 0.05% sodium fluoride + 0.03% triclosan; (II) 0.5 g/l cetylpyridinium chloride + 0.05% sodium fluoride; (III) 0.12% chlorohexidine digluconate. The assessment of the individual effect of active ingredients was studied by using 0.05% sodium fluoride. Commercially pure titanium (CP Ti) was used as control. Microstructures from Ti-10Mo experimental alloy and CP Ti were also evaluated using optical microscopy. Ti-10Mo as-cast alloy shows the typical rapidly cooled dendrites microstructure (beta phase) while CP Ti has exhibited a metastable martensitic microstructure. Electrochemical behavior of dental materials here studied was more affected by mouthwash type than by Ti alloy composition or microstructure. In both alloys passivation phenomenon was observed. This process may be mainly related to Ti oxides or other Ti species present in spontaneously formed film. Small differences in passive current densities values may be connected with changes in film porosity and thickness. Protective characteristics of this passive film are lower in 0.05% sodium fluoride + 0.03% triclosan mouthwash than in the other two mouthwashes tested.