Psicologia social e processo grupal: a coerência entre fazer, pensar sentir em Sívia Lane

O presente artigo trata da concepção histórica e dialética de processo grupal proposta por Sílvia Lane, que utiliza como base para suas reflexões os pressupostos de materialismo dialético quando considera os aspectos pessoais, as características grupais, a vivência subjetiva e a realidade objetiva e o caráter histórico do grupo. O que pretendemos enfatizar neste artigo é a produção sobre grupo presente em sua obra que foi se construindo no decorrer das décadas de 1980 e 1990, sintetizada no texto O processo grupal. Neste sentido, busca-se trazer as contribuições presentes no conjunto de sua obra, sistematizadas em artigos, coletâneas e livros, em que Sílvia Lane discute a articulação de algumas categorias fundamentais para a análise do processo grupal e suas implicações teóricas, metodológicas e prático-políticas.

Poole-Frenkel effect in amorphous poly(p-phenylene sulfide)

The conductivity of poly(p-phenylene sulfide) (PPS) amorphous samples sandwiched between metallic electrodes has been studied as a function of applied voltage, temperature, and electrode material. The voltage (U) dependence of the currents for electric fields within the range 10(3)-10(6) V/cm exhibits exp beta U-1/2 behavior with beta = beta(Schottky) below the glass transition temperature (T-g congruent to 90 degrees C), and beta = beta(Poole-Frenkel) above T-g. Coordinated temperature measurements of de currents with different metallic contacts and thermally stimulated currents (TSC) indicate, however, that the conductivity at T < T-g is consistent with the so-called ''anomalous'' Poole-Frenkel effect rather than the Schottky effect. Consequently, the p-type conductivity in amorphous PPS is proposed to be a bulk-limited process due to ionization of two different types of acceptor centers in the presence of neutral hole traps. (C) 1996 John Wiley & Sons, Inc.

Poole-Frenkel effect in Er doped SnO2 thin films deposited by sol-gel-dip-coating

Electrical properties of Er-doped SnO2 thin films obtained by sol-gel-dip-coating technique were measured. When compared to undoped tin dioxide, rare-earth doped films present much higher resistivity, indicating that Er3+ presents an acceptor-like character into the matrix, which leads to a high degree of electric charge compensation. Current-voltage characteristics, measured above room temperature for Er-doped films, lead to non-linear behavior and two conduction regimes. In the lower electric field range the conduction is dominated by Schottky emission over the grain boundary potential barrier, which presents an average value of 0.85 eV. Increasing the applied bias, a second regime of conduction is observed, since the Poole-Frenkel coulombic barrier lowering becomes a significant effect. The obtained activation energy for ionization is 0.67 eV. (C) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

As contribuições de Horace Lane na instrução pública paulista (1890-1910)

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