122 resultados para Indirect orientation

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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This paper presents a method for indirect orientation of aerial images using ground control lines extracted from airborne Laser system (ALS) data. This data integration strategy has shown good potential in the automation of photogrammetric tasks, including the indirect orientation of images. The most important characteristic of the proposed approach is that the exterior orientation parameters (EOP) of a single or multiple images can be automatically computed with a space resection procedure from data derived from different sensors. The suggested method works as follows. Firstly, the straight lines are automatically extracted in the digital aerial image (s) and in the intensity image derived from an ALS data-set (S). Then, correspondence between s and S is automatically determined. A line-based coplanarity model that establishes the relationship between straight lines in the object and in the image space is used to estimate the EOP with the iterated extended Kalman filtering (IEKF). Implementation and testing of the method have employed data from different sensors. Experiments were conducted to assess the proposed method and the results obtained showed that the estimation of the EOP is function of ALS positional accuracy.

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In this work a method is proposed to allow the indirect orientation of images using photogrammetric control extracted through integration of data derived from Photogrammetry and Light Detection and Ranging (LiDAR) system. The photogrammetric control is obtained by using an inverse photogrammetric model, which allows the projection of image space straight lines onto the object space. This mathematical model is developed based on the intersection between the collinearity-based straight line and a DSM of region, derived from LiDAR data. The mathematical model used in the indirect orientation of the image is known as the model of equivalent t planes. This mathematical model is based on the equivalence between the vector normal to the projection plane in the image space and to the vector normal to the rotated projection plane in the object space. The goal of this work is to verify the quality, efficiency and potential of photogrammetric control straight lines obtained with proposed method applied to the indirect orientation of images. The quality of generated photogrammetric control was statistically available and the results showed that proposed method is promising and it has potential for the indirect orientation of images.

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The aim of this paper is to present a photogrammetric method for determining the dimensions of flat surfaces, such as billboards, based on a single digital image. A mathematical model was adapted to generate linear equations for vertical and horizontal lines in the object space. These lines are identified and measured in the image and the rotation matrix is computed using an indirect method. The distance between the camera and the surface is measured using a lasermeter, providing the coordinates of the camera perspective center. Eccentricity of the lasermeter center related to the camera perspective center is modeled by three translations, which are computed using a calibration procedure. Some experiments were performed to test the proposed method and the achieved results are within a relative error of about 1 percent in areas and distances in the object space. This accuracy fulfills the requirements of the intended applications. © 2005 American Society for Photogrammetry and Remote Sensing.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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The antimutagenic effect of ethanolic extract of propolis (EEP) and honeybee (Apis mellifera) venom, both collected in the State of Sb Paulo, Brazil, was assessed by the Salmonella/microsome assay upon direct- and indirect-acting mutagens. EEP had inhibitory effect (in an ascending order) on the mutagenicity power of daunomycin (TA102), benzo(a)pyrene (TA100), and aflatoxin B-1(TA98) and the venom acted against the mutagenicity of 4-nitro-o-phenylenediamine (TA98) and daunomycin (TA102). (C) 1999 Wiley-Liss, Inc.

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In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Universidade Federal de Juiz de Fora, Brazil.

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A variation of photoconductivity excitation with wavelength is applied to Si-doped Al0.56Ga0.44As (indirect bandgap material) for a wide range of temperature. The lower the temperature the lower the photocurrent below 70 K. In the range 13-30 K there is a decrease in the photoconductivity spectrum slightly above the bandgap transition energy, followed by another increase in the conductivity. We interpret these results in the light of existing models and confirm the trapping by the X-valley effective mass state. which is responsible for attenuation of persistent photoconductivity below 70 K. A DX0 intermediate state which has non-negligible lifetime is proposed as responsible for the decrease in the photoconductivity with about 561 nm of wavelength of exciting light, in the investigated 13-30 g range.