Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Electrical properties of individual and small ensembles of InAs/InP nanostructures

We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

Investigação óptica de pontos quânticos de InAs confinados em poços quânticos de In0,15Ga0,85As

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Net requirements of protein and energy for maintenance of wool and hair lambs in a tropical region

The objective of this work was to evaluate the total endogenous N losses, and protein and energy net requirements for maintenance in growing lambs. Thirty-four castrated lambs, 17 F1 Ideal X Ile de France wool and 17 Santa Inas hair lambs, averaging 20 +/- 0.14 kg BW, were used in the experiment. Five animals from each genotype were slaughtered at the beginning of the experiment and taken as controls. Diets (D) were composed of concentrate mix (C) and Cynodon sp. c.v. Tifton 85 hay (R), combined in three different ratios: D1 = 60C:40R; D2 = 40C:60R and D3 = 20C:80R. Animals of each group of three lambs, that showed BW of 20 kg at the beginning of the dietary regimen, were slaughtered when one of them reached 35 kg, what always happened to be the one fed with D1. Total endogenous N losses estimated for wool lambs were 250 mg N/kg BW0.75. For hair lambs, total endogenous N losses reached 324 mg N/kg BW0.75 . Hair lambs showed higher (P < 0.01) (29.9%) net requirements of protein for maintenance than wool lambs. In contrast, net energy (NE) requirement for maintenance was similar (P > 0.05) for both genotypes (74.27 kcal/kg BW0.75 per day), the average of the antilog of the two intercept values obtained from the estimated regression equations of heat production for zero metabolizable energy (ME) consumption. Further studies should be done to check if this trend is also true for metabolizable energy and protein in animals exhibiting BW gains in tropical region. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals.

Strain relaxation and stress-driven interdiffusion in InAsInGaAsInP nanowires

The authors have investigated strain relaxation in InAsInGaAsInP nanowires (NW's). Transmission electron microscopy images show an additional stress field attributed to compositional modulation in the ternary layer, which disrupts NW formation and drives Ga interdiffusion into InAs, according to grazing incidence x-Ray diffraction under anomalous scattering conditions. The strain profile along the NW, however, is not significantly affected when interdiffusion is considered. Results show that the InAs NW energetic stability is preserved with the introduction of ternary buffer layer in the structure. © 2007 American Institute of Physics.

Efeito do tratamento térmico nas propriedades ópticas de pontos quânticos emitindo na faixa espectral de 1,3 a 1,5 üm

Pós-graduação em Ciência e Tecnologia de Materiais - FC