Tailoring of heterostructures in a SnO2/TiO2 system by the oriented attachment mechanism

In order to verify the possibility of forming a heterostructure-i.e., a nanoparticle tailored by the junction of two or more different materials-through the oriented attachment (OA) mechanism, experiments with rutile TiO2 and cassiterite SnO2 as candidate materials were done, since they have similar crystallographic parameters. The experiments were carried out in hydrothermal conditions and in an in situ observation at the high resolution transmission electron microscopy. The results showed the formation of TiO2/SnO2 heterostructures, confirming the coexistence of rotation-alignment and oriented collision mechanisms, hypothesis of OA behavior proposed in previous theoretical works.

Photocatalytic activity of semiconductor sulfide heterostructures

This paper reports a theoretical and experimental study of the heterostructure photocatalytic activity in a CdS or ZnS and CdS@ZnS decorated system prepared by a microwave assisted solvothermal (MAS) method. A theoretical model of the decorated system was created in order to analyze the electronic transition mainly in their interface. The results show that CdS and ZnS interfaces produce an electron charge transfer from the CdS electron-populated clusters to the ZnS hole-populated clusters which helps to enhance the photocatalytic activity of the CdS@ZnS decorated system. © 2013 The Royal Society of Chemistry.

Structural and optical properties of ZnS/MgNb2O6 heterostructures

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Modulation of charge-density waves by superlattice structures

We discuss the interplay between electronic correlations and an underlying superlattice structure in determining the period of charge density waves (CDW's), by considering a one-dimensional Hubbard model with a repeated (nonrandom) pattern of repulsive (U > 0) and free (U=0) sites. Density matrix renormalization group diagonalization of finite systems (up to 120 sites) is used to calculate the charge-density correlation function and structure factor in the ground state. The modulation period can still be predicted through effective Fermi wave vectors k(F)(*) and densities, and we have found that it is much more sensitive to electron (or hole) doping, both because of the narrow range of densities needed to go from q(*)=0 to pi, but also due to sharp 2k(F)(*)-4k(F)(*) transitions; these features render CDW's more versatile for actual applications in heterostructures than in homogeneous systems.

Magnetic-field and confinement effects on the effective Land, g factor in AlxGa1-xAs parabolic quantum wells

The magnetic-field and confinement effects on the Land, factor in AlxGa1-xAs parabolic quantum wells under magnetic fields applied parallel or perpendicular to the growth direction are theoretically studied. Calculations are performed in the limit of low temperatures and low electron density in the heterostructure. The g factor is obtained by taking into account the effects of non-parabolicity and anisotropy of the conduction band through the 2 x 2 Ogg-McCombe Hamiltonian, and by including the cubic Dresselhaus spin-orbit term. A simple formula describing the magnetic-field dependence of the effective Land, factor is analytically derived by using the Rayleigh-Schrodinger perturbation theory, and it is found in good agreement with previous experimental studies devoted to understand the behavior of the g factor, as a function of an applied magnetic field, in semiconductor heterostructures. Present numerical results for the effective Land, factor are shown as functions of the quantum-well parameters and magnetic-field strength, and compared with available experimental measurements.

Anderson localization and Brewster anomalies in photonic disordered quasiperiodic lattices

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Suppression of Anderson localization of light in one-dimensional disordered photonic superlattices

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Simulação computacional de materiais com elétrons fortemente interagentes: DMRG aplicado a super-redes Hubbard com modulação de condução entre camadas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Bulk plasmon polariton-gap soliton-induced transparency in one-dimensional Kerr-metamaterial superlattices

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Um estudo teórico e experimental de nanoestruturas de 'ZnS': propriedades físicas e químicas

Pós-graduação em Química - IQ

Elucidating the optical properties of novel heterolayered materials based on MoTe2-InN for photovoltaic applications

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

Preparação, caracterização e estudo da eficiência na fotodegradação e adsorção de Rodamina B de heteroestruturas de TiO2/α-Fe2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)