Strain- and electric field-induced band gap modulation in nitride nanomembranes

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.

Preparação de filmes policristalinos de GaN pela técnica de sputtering reativo a baixas temperaturas de substrato

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Cálculos de estrutura eletrônica de materiais mediante combinação linear de orbitais atômicos

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Searching for gallium bioactive compounds: Gallium(III) complexes of tridentate salicylaldehyde semicarbazone derivatives

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Columnar microstructure of nanocrystalline Ga1-xMnxN films deposited by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and thermal studies of solid state 2-chloro-benzylidenepyruvic acid and its compounds with sodium, aluminium (III), gallium (III) and indium (III) cations

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cutting forces in turning of gray cast iron using silicon nitride based cutting tool

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Synthesis, characterization and thermal behaviour of solid state compounds of 2-chlorobenzylidenepyruvate with trivalent aluminium, gallium, indium and scandium metals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Influence of the substitution of Y2O3 for CeO2 on the mechanical and microstructural properties of silicon nitride

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique

We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E-04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10(-5) (Omega.cm)(-1). Hydrogen was incorporated in the films by the introduction of an electronically controlled H-2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.

Low temperature annealing of amorphous gallium arsenide films

This work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce crystallization of the material. The films were grown by the flash evaporation technique on glass substrates at room temperature. Optical and structural changes of our samples were monitored through photothermal deflection spectroscopy, optical transmittance and reflectance and X-ray diffraction (XRD). The structural results from XRD detected no crystallization of the films for temperatures up to 240 degreesC. We have observed consistent changes in the optical gap and Urbach energy of the annealed film. The optical gap increases with increasing annealing temperature from 1.17 to 1.32 eV. The Urbach energy decrease from 120 meV (as-grown film) to 105 meV (anneal at 200 degreesC). We propose that these changes are due to a diminution of the tail state defects and/or the relaxation of strained bonds. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Urbach energy parameter of flash evaporated amorphous gallium arsenide films

The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash evaporated films. The Urbach energy parameter, determined from photothermal deflection spectroscopy (PDS), presents large correlated variations with crucible temperature. The optical and electrical results are consistent with the As under coordinated sites being the more important defect in the material. © 2002 Elsevier Science B.V. All rights reserved.

Comparative study on turning CI and CGI using silicon nitride cutting tools

There has been a great interest for improving the machining of cast iron materials in the automotive and other industries. Comparative studies for tool used to machine grey cast iron (CI) and compacted graphite iron (CGI) on dry machining were also performed in order to find out why in this case the tool lifetime is not significantly higher. However the machining these materials while considering turning with the traditional high-speed steel and carbide cutting tools present any disadvantages. One of these disadvantages is that all the traditional machining processes involve the cooling fluid to remove the heat generated on workpiece due to friction during cutting. This paper present a new generation of ceramic cutting tool exhibiting improved properties and important advances in machining CI and CGI. The tool performance was analyzed in function of flank wear, temperature and roughness, while can be observed that main effects were found for tool wear, were abrasion to CI and inter-diffusion of constituting elements between tool and CGI, causing crater. However the difference in tool lifetime can be explained by the formation of a MnS layer on the tool surface in the case of grey CI. This layer is missing in the case of CGI.