Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

Non-Zeeman splitting for a spin-resolved STM with a Kondo adatom in a spin-polarized two-dimensional electron gas

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Application of abrupt cut-off models in the analysis of the capacitance spectra of conjugated polymer devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Charge injection in an LED with a hybrid composite as the emissive layer

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

A two band model for superconductivity: probing interband pair formation

We propose a two band model for superconductivity. It turns out that the simplest nontrivial case considers solely interband scattering, and both bands can be modeled as symmetric (around the Fermi level) and flat, thus each band is completely characterized by its half-band width Wn (n=1,2). A useful dimensionless parameter is d, proportional to W2 - W1. The case delta = 0 retrieves the conventional BCS model. We probe the specific heat, the ratio gap over critical temperature, the thermodynamic critical field and tunneling conductance as functions of d and temperature (from zero to Tc). We compare our results with experimental results for MgB2 and good quantitative agreement is obtained, indicating the relevance of interband coupling. Work in progress also considers the inclusion of band hybridization and general interband as well as intra-band scattering mechanisms.

Doping saturation in dye-sensitized solar cells based on ZnO:Ga nanostructured photoanodes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Soliton clusters inducing insulator-to-metal transition in polyacetylene: a Su-Schrieffer-Heeger model study

The Su-Schrieffer-Heeger (SSH) Hamiltonian has been one of most used models to study the electronic structure of polyacetylene (PA) chains. It has been reported in the literature that in the SSH framework a disordered soliton distribution can not produce a metallic regime. However, in this work (using the same SSH model and parameters) we show that this is possible. The necessary conditions for true metals (non-vanishing density of states and extended wavefunctions around the Fermi level) are obtained for soliton concentration higher than 6% through soliton segregation (clustering). These results are consistent with recent experimental data supporting disorder as an essential mechanism behind the high conductivity of conducting polymers. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Photoluminescence temperature dependence of doped parabolic quantum wells

Parabolic quantum wells (PQWs) have been studied by temperature dependent photoluminescence (PL). Two kind of samples have been studied. Concerning the undoped sample, the dominant luminescences were the bulk GaAs and the fundamental transition of the PQW. The evolution on temperature of the energy position of both PL emissions follows the well known Varshing formula. For the doped samples strong radiative recombination of the electron gas with photogenerated holes was observed. At low temperature strong Fermi level enhancement occurs in the luminescence as a result of the multi-electron-hole scattering, which is smear out increasing the temperature.

Many-body effects in wide parabolic AlGaAs quantum wells

Photoluminescence measurements at different temperatures have been performed to investigate the optical response of a two-dimensional electron gas in n-type wide parabolic quantum wells. A series of samples with different well widths in the range of 1000-3000 A was analyzed. Many-body effects, usually observed in the recombination process of a two-dimensional electron gas, appear as a strong enhancement in the photoluminescence spectra at the Fermi level at low temperature only in the thinnest parabolic quantum wells. The suppression of the many-body effect in the thicker quantum wells was attributed to the decrease of the overlap between the wavefunctions of the photocreated holes and the two-dimensional electrons belonging to the highest occupied electron subband. (C) 2007 American Institute of Physics.

Rietveld refinement, microstructure, conductivity and impedance properties of Ba[Zr0.25Ti0.75]O-3 ceramic

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Extended states in disordered doped polyacetylene chains

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Disordered distribution of defects in polythiophene

In this work we study the electronic structure associated to a disordered distribution of bipolarons in polythiophene. The polymer chain is modelled by a tight-binding Hamiltonian with explicit treatment of electron-phonon coupling and the elastic energy of the sigma framework. The model also includes the electrostatic interaction due to the counterions. The density of states of the disordered system is obtained by the use of the Negative Factor Counting technique. Our results show that ion-induced conformational disorder can account for the closure of the gap and that the states around the Fermi level are extended. © 1993.

Determination of density of states in PPS from space-charge-limited current measurements

Space-charge-limited currents measurements have been carried out on undoped amorphous poly p-phenylene sulfide. The scaling law is checked for different samples with varying thickness, and J-V data analyzed. The position of the quasi-Fermi level and the density of states was obtained.

Insulator-to-metal transition driven by clustering of solitons in polyacetylene

It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor gap. Disordered distributions of solitons close the gap, but the electronic states around the Fermi energy are localized. However, within the same framework, it is possible to show that a cluster of solitons can produce dramatic changes in the electronic structure, allowing an insulator-to-metal transition.

A generalized theory of electrical characteristics of schottky barriers for amorphous materials

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single energy level and (iii) energetically distributed bulk impurity states. We also consider a thin oxide layer (≈10 Å) between metal and semiconductor. We develop current versus applied potential characteristics considering the variation of the Fermi level very close to contact inside the semiconductor and decrease in barrier height due to the image force effect as well as potential fall on the oxide layer. Finally, we discuss the importance of each parameter, i.e. surface states, distributed impurity states, doping impurity states, thickness of oxide layer etc. on the log I versus applied potential characteristics. The present theory is also applicable for intimate contact, i.e. metal-semiconductor contact, crystalline material structures or for Schottky barriers in insulators or polymers.