4 resultados para Ensembles de niveau

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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A procedure for the standardization of ensembles of gold nanodisk electrodes (NEE) of 30 nm diameter is presented, which is based on the analytical comparison between experimental cyclic voltammograms (CV) obtained at the NEEs in diluted solutions of redox probes and CV patterns obtained by digital simulation. Possible origins of defects sometimes found in NEEs are discussed. Selected NEEs are then employed for the study of the electrochemical oxidation of iodide in acidic solutions. CV patterns display typical quasi-reversible behavior which involves associated chemical reactions between adsorbed and solution species. The main CV characteristics at the NEE compare with those observed at millimeter sized gold disk electrodes (Au-macro), apart a slight shift in E1/2 values and slightly higher peak to peak separation at the NEE. The detection limit (DC) at NEEs is 0.3 mu M, which is more than one order of magnitude lower than DL at the Au-macro (4 RM). The mechanism of the electrochemical oxidation of iodide at NEEs is discussed. Finally, NEEs are applied to the direct determination of iodide at micromolar concentration levels in real samples, namely in some ophthalmic drugs and iodized table salt. (c) 2006 Elsevier B.V. All rights reserved.

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We investigate electrical properties of InAs/InP semiconductor nanostructures by conductive atomic force microscopy (C-AFM) and current measurements at low temperatures in processed devices. Different conductances and threshold voltages for current onset were observed for each type of nanostructure. In particular, the extremity of the wire could be compared to a dot with similar dimensions. The processed devices were used in order to access the in-plane conductance of an assembly of a reduced number of nanostructures. Here, fluctuations on I-V curves at low temperatures (<40 K) were observed. At these low temperatures and for a suitable range of applied voltages, random telegraph noise (RTN) in the current was observed for devices with dots. These fluctuations can be associated to electrons trapped in dots, as suggested by numerical simulations. A crossover from a semiconductor-like to a metallic transport behavior is also observed for similar parameters. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.

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A series of Molecular Dynamics simulations of thermal spikes has been run in zircon. For two different ensembles: microcanonical one and a combination of microcanonical one acting on the simulation core with Langevin one on the side walls of simulation. Depending on the used ensemble, different track-formation threshold energies were found. When the combined ensemble is carried out, the total energy of the simulations varies with the temperature which can influence how annealing fission-track models should deal with the lattice recovery. A fission-track annealing model is tested with the simulation results. © 2012 Elsevier Ltd. All rights reserved.