Electro-optical properties of Er-doped SnO2 thin films

Photoconductivity of SnO2 sol-gel films is excited, at low temperature, by using a 266 nm line-fourth harmonic-of a Nd:YAG laser. This line has above bandgap energy and promotes generation of electron-hole pairs, which recombines with oxygen adsorbed at grain boundary. The conductivity increases up to 40 times. After removing the illumination on an undoped SnO2 film, the conductivity remains unchanged, as long as the temperature is kept constant. Adsorbed oxygen ions recombine with photogenerated holes and are continuously evacuated from the system, leaving a net concentration of free electrons into the material, responsible for the increase in the conductivity. For Er doped SnO2, the excitation of conductivity by the laser line has similar behavior, however after removing illumination, the conductivity decreases with exponential-like decay. (C) 2003 Elsevier Ltd. All rights reserved.

Heterodyne Interferometry Applied to the Characterization of Acousto-Electro-Optic Light Modulators

When the electro-optic and acousto-optic effects are combined into a single device, the resulting acousto-electro-optic (AEO) modulator shows improved flexibility to overcome some limitations of the individual modulators or their cascade combinations. By using optical interferometry, it is possible to investigate the AEO modulator behavior as a function of this applied voltage. By this way, a lithium niobate AEO modulator is positioned in one of the arms of a Mach-Zehnder interferometer and operates at 62 MHz frequency, which constitutes the intermediate frequency of the heterodyne interferometer. Operating the AEO modulator in the acousto-optic small diffraction efficiency regime, the photodetected signal amplitude and phase are analyzed, and the induced phase shift, transmission curve and linearity response are obtained. The experimental results show good agreement with that expected from the coupled-mode theory. The possibility of linear control of the optical phase shift by the external voltage, from 0 to 2 p radians, is demonstrated.

Optical and transport properties of rare-earth trivalent ions located at different sites in sol-gel SnO2

Photoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.

Evaluation of Bulk and Surfaces Absorption Edge Energy of Sol-Gel-Dip-Coating SnO2 Thin Films

The absorption edge and the bandgap transition of sol-gel-dip-coating SnO2 thin films, deposited on quartz substrates, are evaluated from optical absorption data and temperature dependent photoconductivity spectra. Structural properties of these films help the interpretation of bandgap transition nature, since the obtained nanosized dimensions of crystallites are determinant on dominant growth direction and, thus, absorption energy. Electronic properties of the bulk and (110) and (101) surfaces are also presented, calculated by means of density functional theory applied to periodic calculations at B3LYP hybrid functional level. Experimentally obtained absorption edge is compared to the calculated energy band diagrams of bulk and (110) and (101) surfaces. The overall calculated electronic properties in conjunction with structural and electro-optical experimental data suggest that the nature of the bandgap transition is related to a combined effect of bulk and (101) surface, which presents direct bandgap transition.

Coloring ionic trapping states in WO3 and Nb2O5 electrochromic materials

Complex electro-optical analysis is a very useful approach to separate different kinetic processes that occur during ionic insertion reactions in electrochromic oxide materials. In this paper, we use this type of combined technique to investigate ionic and optical changes in different oxide host systems, i.e., in two oxide hosts, specifically WO3 and Nb2O5. A comparison of their electro-optical responses revealed the presence of an ionic trapping contribution to the kinetics of the coloring sites, which was named here as coloring ionic trapping state. As expected, this coloring trapping process is slower in Nb2O5 since the reduction potential of Nb2O5 is more negative (more energy is needed for a higher degree of coloration). A phenomenological solid-state model that encompasses homogeneous charge transfer and valence trapping was proposed to explain the coloring ionic trapping process. Basically the model is able to explain how ionic dynamics at low frequency region, i.e., the slower kinetic step, controls the coloring kinetics, i.e., how it is capable to regulate the coloring rates.Optical transient analyses demonstrated the possibility of the presence of more than one coloring ionic trap, indicating the complexity of the processes involved in coloration phenomenon in metal oxide host systems. (C) 2008 Published by Elsevier Ltd.

Electron scattering and effects of sources of light on photoconductivity of SnO2 coatings prepared by sol-gel

Electro-optical properties of sol-gel derived 2 mol% antimony or niobium doped tin dioxide films have been measured. The electron density has been calculated considering all the relevant scattering mechanisms and experimental conductivity data measured in the range -197 to 25 degrees C. The results support the hypothesis that both ionised impurity scattering and grain boundary scattering have comparable effects in the resistivity of coatings, for free electron density congruent to 5 x 10(18) cm(-3). We have measured variation of photoconductivity excitation with wavelength using xenon and deuterium lamp as light sources. Results show that the main band in the photoconductivity spectrum is dependent on the spectral light source emission, the excitation peak reaching 5 eV (deuterium lamp). This band is due to the recombination process involving oxygen species and photogenerated electron-hole pairs. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Hot-pressed 9.5/65/35 PLZT prepared by the polymeric precursor method

A 9.5/65/35 PLZT ceramic with a Pb-0.905 La-0.095 (Zr-0.65 Ti-0.35)(0.976) O-3 + 35 w% PbO formula was prepared using the Pechini method for powder preparation and two-step sintering in an oxygen atmosphere. Thr first step consisted of sintering at 1200 degrees C for 4 h with slow heating and cooling rates. The second step consisted of hot pressing at 1200 degrees C for 3 h, with slow heating and cooling rates and pressing pressures of 20 MPa (initial pressure) and 40 MPa (at sintering temperature). Investigations were made of the powder phase formation and powder morphology, i.e. The structure of sintered and hot-pressed PLZT ceramics. SEM microstructural analyses were carried out on the sintering and hot-pressing processes. (C) 2000 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Thermal and structural investigation of SnO2/Sb2O3 obtained by the polymeric precursor method

SnO2-based materials are used as sensors, catalysts and in electro-optical devices. This work aims to synthesize and characterize the SnO2/Sb2O3-based inorganic pigments, obtained by the polymeric precursor method, also known as Pechini method (based on the metallic citrate polymerization by means of ethylene glycol). The precursors were characterized by thermogravimetry (TG) and differential thermal analysis (DTA). After characterization, the precursors were heat-treated at different temperatures and characterized by X-ray diffraction. According to the TG/DTA curves basically two-step mass loss process was observed: the first one is related to the dehydration of the system; and the second one is representative to the combustion of the organic matter. Increase of the heat treatment temperature from 500 to 600 degrees C and 700 degrees C resulted higher crystallinity of the formed product.

The Role of the Eu3+ Concentration on the SrMoO4:Eu Phosphor Properties: Synthesis, Characterization and Photophysical Studies

SrMoO4 doped with rare earth are still scarce nowadays and have attracted great attention due to their applications as scintillating materials in electro-optical like solid-state lasers and optical fibers, for instance. In this work Sr1-xEuxMoO4 powders, where x = 0.01; 0.03 and 0.05, were synthesized by Complex Polymerization (CP) Method. The structural and optical properties of the SrMoO4:Eu3+ were analyzed by powder X-ray diffraction patterns, Fourier Transform Infra-Red (FTIR), Raman Spectroscopy, and through Photoluminescent Measurements (PL). Only a crystalline scheelite-type phase was obtained when the powders were heat-treated at 800 A degrees C for 2 h, 2 theta = 27.8A degrees (100% peak). The excitation spectra of the SrMoO4:Eu3+ (lambda(Em.) = 614 nm) presented the characteristic band of the Eu3 + 5L6 transition at 394 nm and a broad band at around 288 nm ascribed to the charge-transfer from the O (2p) state to the Mo (4d) one in the SrMoO4 matrix. The emission spectra of the SrMoO4:Eu3+ powders (lambda(Exc.) = 394 and 288 nm) show the group of sharp emission bands among 523-554 nm and 578-699 nm, assigned to the D-5(1)-> F-7(0,1and 2) and D-5(0)-> F-7(0,1,2,3 and 4), respectively. The band related to the D-5(0)-> F-7(0) transition indicates the presence of Eu3+ site without inversion center. This hypothesis is strengthened by the fact that the band referent to the D-5(0)-> F-7(2) transition is the most intense in the emission spectra.

Sensor eletro-óptico de tensões elevadas e sua viabilidade para implementação de TP óptico

Pós-graduação em Engenharia Elétrica - FEIS

Síntese, processamento em hidrotermal convencional/microondas e propriedades fotoluminescentes dos pós de BaW 'O IND. 4'

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Preparação e caracterização de filmes fotossensíveis de TEOS/PMMA obtidos a partir do processo Sol-Gel

Pós-graduação em Física - IGCE

Otimização do processamento para obtenção de compósitos polímero/cerâmica com propriedades piezo e piroelétricas

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Titanato de Bário e cálcio: influência da substituição parcial d modificador de rede nas propriedades fotoluminescentes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização de pós cerâmicos de Ca(Mo,W)O4 obtidos pelo método dos precursores poliméricos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)