Estudo da correlação entre propriedades não-ôhmicas, processos de relaxação dielétrica e microestrutura de cerâmicas policristalinas do tipo (Ca IND. 1/4 Cu IND. 3/4)TiO IND. 3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência dos defeitos cristalinos nas propriedades dielétricas e não-ôhmicas do 'CA' 'CU IND.3' 'TI IND.4' 'O IND.12'(CCTO)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Comportamento dielétrico e ferroéletrico de cerâmicas BA('TI IND1-X''ZR IND.X)'O IND.3' modificadas com íons vanádio e tungstênio obtidos a partir de mistura de óxidos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Obtenção e caracterização de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos

Pós-graduação em Engenharia Mecânica - FEG

Síntese e caracterização dielétrica de filmes finos de Bi3NbO7 obtidos pelo método dos precursores poliméricos

Bi3NbO7 thin films were prepared by the polymeric precursor method. The precursor solutions were prepared with excess of bismuth ranging from 0% to 10% and the pH was controlled to be maintained between 8 and 9. This control was done by adding to the solution niobium and ethylene glycol. The final solution was clear and free of precipitation. After obtaining the precursor solution, has begun the process of characterization of powders with thermogravimetry (TG), differential thermal analysis and X-ray analysis (XRD). The films were obtained by the polymeric precursors, the method is advantageous because it is simple, and low cost involves steps and controlled stoichiometry. The films were annealed and characterized by XRD and SEM and also characterized according to their dialectics properties. We observed that the best results were obtained when the film is thermally at 800 ° C for two hours and 860 ° C for two hour. Under these conditions we obtain Bi3NbO7 thin films with good homogeneity, uniform distribution of the grains, but with the formation of secondary phase, which does not occur in treatments with lower temperature. The dielectric characterization showed that the produced film showed good characteristics with high dielectric constant and low loss

Desenvolvimento de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos em diferentes eletrodos óxidos

Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

Análise da resposta dielétrica e varistora de compostos cerâmicos multifásicos à base de Ca2CU2Ti4-xSnxO12 (0,0 < x< 4,0)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)