Synthesis by a chemical method and characterization of CaZrO3 powders: Potential application as humidity sensors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A theoretical investigation of the structural and eletronic properties of orthorhombic CaZrO3

A CaZrO3 (CZO) powder was prepared by the soft chemical, polymeric precursor method (PPM). The CZO crystalline structure was investigated by powder X-ray diffraction (XDR), Retvield Refinament data, Raman spectra and ultraviolet–visible absorption spectroscopy. A theoretical study was performed using a periodic quantum mechanical calculation (CRYSTAL09 program). The periodic model built for the crystalline CZO structure was consistent with the experimental data obtained from structural and electronic properties. These results show that the material has an orthorhombic structure with experimental and theoretical gap values of 5.7 eV and 6.2 eV, respectively. In this article, we discuss the hybridization process of the oxygen p-orbitals and of the zirconium d-orbitals and analyze their band structures and density of states (partial and total).

Characterization of superconducting BSCCO/CaSiO3 and BSCCO/CaZrO3 Ag PIT wires

The addition of two compounds, calcium silicate and calcium zirconate was tested in the preparation of Bi: 2212 silver sheathed wires by powder-in-tube method. The wires were treated in an atmosphere of O-2/Ar using partial melting method. The characterizations were structural and on their electrical and magnetic properties. It was found that the addition of calcium silicate or zirconate promoted higher transition temperatures, up to 116 K for BSCCO with 1wt.% CaSiO3. The critical current densities determined by transport and magnetization measurements were improved in comparison with the wires without any addition.

Characterization of superconducting BSCCO/CaSiO3 and BSCCO/CaZrO3 Ag PIT wires

The addition of two compounds, calcium silicate and calcium zirconate was tested, in the preparation of Bi: 2212 silver sheathed wires by powder-in-tube method, which were successfully tested previously in processing chips. The wires were treated in an atmosphere of O2/Ar using partial melting method. The characterizations were structural and on their electrical and magnetic properties. As the results, transition temperatures were higher than the expected for this stage, ranged from 105K (BSCCO880) to 116K (+Si883). The critical current densities encountered in transport and magnetization measurements were improved in comparison with the wires without addition.