Schottky-type grain boundaries in CCTO ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Crystallization and optical properties of CCTO thin films under pressure influence

CCTO thin films were deposited on Pt(111)/Ti/SiO 2/Si substrates using a chemical (polymeric precursor) and pressure method. The pressure effects on the CCTO thin films were evaluated by XRD, FEG-SEM and optical properties. Pressure films were found to be more homogeneous and dense than chemical deposition films. Pressure also leaded to an increase in the photoluminescence emission; it is suggested that the displacement of Ti in the titanate clusters, favors the charge transference from TiO 6 to [TiO 5V o z], TiO 5V o z] to [CaO 11V o z] and [TiO 5V o z] to [CuO 4] x. The low synthesis temperature used in the pressure method allows the deposition of films on less expensive substrates (i.e. glass, aluminum, polymer and others).

Red shift and higher photoluminescence emission of CCTO thin films undergoing pressure treatment

CCTO thin films were deposited on Pt(1 1 1)/Ti/SiO2/Si substrates using a chemical (polymeric precursor) and pressure method. Pressure effects on CCTO thin films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and optical properties which revealed that a pressure film (PF) is denser and more homogeneous than a chemical film (CF). Pressure also causes a decrease in the band gap and an increase in the photoluminescence (PL) emission of CCTO films which suggests that the pressure facilitates the displacement of Ti in the titanate clusters and the charge transference from TiO6 to [TiO5V0z], [TiO5V0z] to [CaO11V0z] and [TiO5V0z] to [CuO4]x. © 2013 Elsevier B.V. All rights reserved.

Influência dos defeitos cristalinos nas propriedades dielétricas e não-ôhmicas do 'CA' 'CU IND.3' 'TI IND.4' 'O IND.12'(CCTO)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Composições varistoras à base de óxido misto de cálcio, cobre e titânio (CCTO) e titanato de cálcio (CaTiO3) e respectivo método de obtenção de blocos varistores

A presente invenção refere-se a composições varistoras à base de óxidos metálicos, mais particularmente à base de óxido misto de cálcio, cobre e titánio (CCTO), com a presença, ou não, de titanato de cálcio (CaTiO~ 3~), para conformação de blocos cerâmicos varistores (resistores não-lineares).

Evaluation of the effect of the stoichiometric ratio of Ca/Cu on the electrical and microstructural properties of the CaCu3Ti4O12 polycrystalline system

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of vanadium on electrical and microstructural properties of CaCu3Ti4O12/CaTiO3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A polaronic stacking fault defect model for CaCu3Ti4O12 material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Resistive-Switching Behavior in Polycrystalline CaCu3Ti4O12 Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Multi-functional properties of CaCu3Ti4O12 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Cation-oxygen interaction and oxygen stability in CaCu3Ti4O12 and CdCu3Ti4O12 lattices

The cubic perovskite related material CaCu3Ti4O12 has attracted a great deal of attention due to the high values of the static dielectric constant, of order 104, approximately constant in the temperature range 100-600 K. The substitution of Ca by Cd results in a similar temperature dependence but a static dielectric constant more than one order of magnitude lower. A theoretical electronic structure study is performed on CaCu3Ti4O12 (CCTO) and CdCu3Ti4O12 (CdCTO) using a tight binding with overlap method. Although the calculations are performed in a paramagnetic configuration, excellent agreement with experiment was found for the calculated band gap of CCTO. In spite of the fact that the band structures of both systems look practically the same, a significant difference is found in the calculated bond strength of Ca-O and Cd-O pairs, driven by the presence of Ti, with Ca-O interaction in CCTO loosened with respect to Cd-O interaction in the cadmium compound. It is suggested that O vacancies are more easily formed in CCTO, this being related to the lower electronegativity of Ca as compared to Cd. The formation of oxygen vacancies could be the origin of the difference in the static dielectric constant of the two compounds.

Sol-gel synthesis of mesoporous CaCu3Ti4O12 thin films and their gas sensing response

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)