6 resultados para BaTiO 3

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


Relevância:

100.00% 100.00%

Publicador:

Resumo:

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Relevância:

70.00% 70.00%

Publicador:

Resumo:

BaTiO(3) powders were prepared through mechanical activation chemistry and analyzed by Rietveld refinement with X-ray diffraction data. Raw BaCO(3) and TiO(2) powders were dry milled for 5 and 20 h and then calcinated for 2 and 4 h at 800 degrees C. The milling process was found to have broken up the BaCO(3) and TiO(2) crystals into smaller crystals and formed only small amounts ( 1.5 wt%) of BaTiO(3). Subsequence calcinations for 2 and 4 h at 800 degrees C successfully produced large amounts (>97.7 wt%) of BaTiO(3) crystals. The calcination process also generated microstrains and crystallite-size anisotropy in BaTiO(3). An increase in the calcination time from 2 to 4 h increased the BaTiO(3) weight percentage and the crystal lite-shape anisotropy, but decreased the tetragonal distortion anisotropic microstrains in BaTiO(3) crystals. (C) 2008 International Centre for Diffraction Data.

Relevância:

60.00% 60.00%

Publicador:

Resumo:

Barium titanate (BT) thick films were prepared from mechanically activated powders based on BaCO(3) and TiO(2). After homogenization and milling in a high-energy vibro mill, the powders were calcined at 700 degreesC for 2 h by slow heating and cooling rates. A thick film paste was prepared by mixing BT fine powders with small amount of low temperature sintering aid and organic binder. The thick films were screen-printed on alumina substrates electroded with Ag-Pd. The BT films were sintered at 850 degreesC for 1 h. The thickness was 25-75 mum depending of number of layers. The microstructure of thick films and the compatibility between BT layers and substrate were investigated by SEM Results of dielectric property measurements are also reported. (C) 2002 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Relevância:

60.00% 60.00%

Publicador:

Resumo:

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Relevância:

60.00% 60.00%

Publicador:

Resumo:

The influence of the addition of dopants on the microstructure development and electrical properties of BaTiO3 doped with 0.2, 0.4, 0.6, 0.8 mol% of Nb and 0.01 mol% of Mn based compounds was studied. Doped barium titanate was prepared using the polymeric precursor method from citrate solutions. The powders calcined at 700°C for 4 hours were analysed by infrared (IR) spectroscopy to verify the presence of carbonates, and by X-ray diffraction (XRD) for phase formation. The phase composition, microstructure and dielectric properties show a strong dependence on the amount of added niobium.

Relevância:

60.00% 60.00%

Publicador:

Resumo:

The microstructure and dielectric properties of Nb-Mn or Sb-Mn codoped BaTiO3 compositions were investigated. Starting ceramics powders were prepared by Pechini method. The composites were sintered at 1310°C and 1330°C in an air atmosphere for two hours. The microstructure and compositional investigations were done with SEM equipped with EDS. Two distinguish microstructure regions are observed in Nb/0.05Mn doped BaTiO 3 ceramics sintered at low temperature. The first, large one, with grain sizes from 5-40 μm and the second region with small grain sizes from 1 to 5 μm. Sintering at higher temperature, independent of Mn content, enables to achieve a uniform microstructure with grains less than 6 μm. In Sb/Mn doped ceramics, for both sintering temperatures, bimodal microstructures with fine grained matrix and grains up to 10 μm is formed. The highest value of permittivity at room temperature and the greatest change of permittivity in function of temperature are observed in Nb/0.01Mn doped ceramics compared to the same ones in Sb/Mn doped ceramics. The greatest shift of Curie temperature towards lower temperature has been noticed in Sb/Mn BaTiO3 ceramics compared to others samples. In all investigated samples the dielectric loss after initially large values at low frequency maintains a constant value for f>3 kHz.