Optical parameters and crystallization of flash evaporated amorphous gallium antimonide films

Flash-evaporated GaSb films are analysed using a combination of optical, surface and x-ray diffraction techniques. The effects of thermal annealings on nearly stoichiometric GaSb films are studied.

Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

We are presenting here p/n junctions obtained with a modified opened liquid-phase epitaxy (LPE) system, used to diffuse indium antimonide (InSb) doped with Cd over InSb doped with Te wafers, in order to make InSb infrared (IR) sensors. This technique has several advantages: the diffusion can be performed in bigger substrate areas improving the device production; this method decreases the device manipulation, decreasing human mistakes and increasing the process reproducibility. The opened LPE in this work produced sensors in the first case with vapor of the diffusion material, coming from a microholed carbon boat full of the diffusion material, over which is positioned the substrate at atmospheric pressure. In the second, the diffusion material is on the bottom of a quartz recipient, and the InSb/Te wafer works as its cover, and vacuum was used. The IR sensors produced with the first method measured 8.9 x 10(7) cm Hz(1/2)/W as detectivity value and higher IR spectral response at 4.6 mu m, and those produced with the second 2.8 x 10(9) cm Hz(1/2)/W, at 4.4 mu m. Besides the electrical-optical properties, the structural properties of diffused layers were investigated by X-ray diffraction (XRD), scanning electron and atomic force microscopy (SEM, AFM), energy-dispersive and secondary ion mass spectroscopy (EDS, SIMS). (C) 2007 Elsevier B.V. All rights reserved.

Crystallization process of amorphous GaSb films studied by Raman spectroscopy

Thermal annealings of amorphous gallium antimonide films were accompanied using Raman spectroscopy, both for stoichiometric and nonstoichiometric compositions. The films were prepared by flash evaporation on silicon substrates. Structural changes were induced by the heat treatments: an increasing degree of crystallization as a function of the annealing temperature is observed. Sb clusters are found to crystallize before GaSb does, and the dependence of the corresponding Raman peak intensity with the annealing temperature (occurring in two regimes) is explained. A mechanism for the crystallization of the amorphous GaSb is proposed, based on the prior migration of the Sb excess outside the GaSb region to be crystallized. © 1995 American Institute of Physics.