18 resultados para Ac conductivity

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.

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The polycrystalline sample of Nd3/2Bi3/2Fe5O12 was prepared by a high- temperature solid-state reaction technique. Preliminary X-ray structural analysis exhibits the formation of a single-phase tetragonal structure at room temperature. Microstructural analysis by scanning electron microscopy shows that the sintered sample has well defined grains. These grains are distributed uniformly throughout the surface of the sample. Detailed studies of dielectric response at various frequencies and temperatures exhibit a dielectric anomaly at 400 A degrees C. The electrical properties (impedance, modulus and conductivity) of the material were studied using a complex impedance spectroscopy technique. These studies reveal a significant contribution of grain and grain boundary effects in the material. The frequency dependent plots of modulus and the impedance loss show that the conductivity relaxation is of non-Debye type. Studies of electrical conductivity with temperature demonstrate that the compound exhibits Arrhenius-type of electrical conductivity. Study of ac conductivity with frequency suggests that the material obeys Jonscher's universal power law.

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Polycrystalline La3/2Bi3/2Fe5O12 (LBIO) compound was prepared by a high-temperature solid-state reaction technique. The complex impedance of LBIO was measured over a wide temperature (i.e., room temperature to 500 C) and frequencies (i.e., 10(2)-10(6) Hz) ranges. This study takes advantage of plotting ac data simultaneously in the form of impedance and modulus spectroscopic plots and obey non-Debye type of relaxation process. The Nyquist's plot showed the presence of grain effects in the material at high temperature. The ac conductivity spectrum was found to obey Jonscher's universal power law. The dc conductivity was found to increase with rise in temperature. The activation energy of the compound was found to be 0.24 and 0.51 eV in the low and high-temperature region, respectively, for conduction process.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Ceramic samples of SrBi2(Nb1-xTax)O-9 (0 less than or equal to x less than or equal to 1) were prepared by the solid state reaction method in order to investigate their structural and electrical features as well as obtain useful information to improve the properties of SrBi2(Nb1-xTax)O-9 as a thin film. The X-ray diffraction patterns and the scanning electronic microscopy photomicrographs show no secondary phases but the formation of a solid-state solution for all the composition. The ac conductivity of the samples, measured at 25 degreesC and 100 kHz frequency, decreases with the increase of Ta content. Such results were explained by intrinsic conductivity of pure components.

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We study the transport properties of the charge-density-wave system Fe3O2BO3. ac conductivity measurements for different frequencies are presented for temperatures above and below the structural transition. dc conductivity, as a function of temperature and pressure, yields the variation of the transition temperature with external pressure. Below this transition the conductivity is thermally activated in a wide range of temperature and the gap obtained is strongly pressure dependent. The ac conductivity at sufficiently low temperatures below the transition is ascribed to the excitation of local defects associated with domain walls and which are characteristic of the one-dimensional nature of the Fe3O2BO3 system.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Polyfluorenes are promising materials for the emitting layer of polymer light emitting devices (PLEDs) with blue emission. In this work, we report on PLEDs fabricated with Langmuir-Blodgett (LB) films of a polyfluorene derivative, namely poly(9,9-di-hexylfluorenediyl vinylene-alt-1,4-phenylenevinylene) (PDHF-PV). Y-type LB films were transferred onto ITO substrates at a surface pressure of 35 mN m-1 and with dipping speed of 3 mm min -1. A thin aluminum layer was evaporated on top of the LB film, thus yielding a sandwich structure (ITO/PDHF-PV(LB)/Al). Current-voltage (I vs V) measurements indicate that the device displays a classical behavior of a rectifying diode. The threshold value is approximately 5 V, and the onset for visible light emission occurs at ca. 10 V. From the a.c. electrical responses we infer that the active layer has a typical behavior of PLEDs where the real component of ac conductivity obeys a power-law with the frequency. Cole-Cole plots (Im(Z) vs. Re(Z)) for the device exhibit a series of semicircles, the diameter of which decreases with increasing forward bias. This PLED structure is modeled by a parallel resistance and capacitance combination, representing the dominant mechanisms of charge transport and polarization in the organic layer, in series with a resistance representing the ITO contact. Overall, the results presented here demonstrate the feasibility of LEDs made with LB films of PDHF-PV.

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Doped zirconia has been used in electronic applications in the cubic crystalline phase. Ceria-stabilized tetragonal zirconia presents high toughness and can also be applied as solid electrolytes. The tetragonal phase of zirconia can be stabilized at room temperature with ceria in a broad range of composition. However, CeO2-ZrO2 has low sinterability. so it is important to investigate the effect of sintering dopants. In this study the effect of iron, copper. manganese and nickel was investigated. The dopants such as iron and copper lowered the sintering temperature from 1600 degreesC down to 1450 degreesC, with a percentage of tetragonal phase retained at room temperature higher than 98% and also with an increase of the electrical conductivity. The electrical conductivity was measured using impedance spectroscopy. The grain boundary contribution was determined and the activation energy associated with the ionic conduction was 1.04 eV. The dopants can also promote a grain boundary cleanliness verified by blocking effect measurement. (C) 2001 Elsevier B.V. Ltd. All rights reserved.