5 resultados para ADDITIONAL MEASUREMENTS

em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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We combine the D0 measurement of the width difference between the light and heavy B-s(0) mass eigenstates and of the CP-violating mixing phase determined from the time-dependent angular distributions in the B-s(0)-> J/psi phi decays along with the charge asymmetry in semileptonic decays also measured with the D0 detector. With the additional constraint from the world average of the flavor-specific B-s(0) lifetime, we obtain Delta Gamma(s)equivalent to(Gamma(L)-Gamma(H))=0.13 +/- 0.09 ps(-1) and vertical bar phi(s)vertical bar=0.70(-0.47)(+0.39) or Delta Gamma(s)=-0.13 +/- 0.09 ps(-1) and vertical bar phi(s)vertical bar=2.44(-0.39)(+0.47). The data sample corresponds to an integrated luminosity of 1.1 fb(-1) accumulated with the D0 detector at the Fermilab Tevatron Collider.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)