O exercício físico melhora a sensibilidade à insulina de ratos expostos à fumaça de cigarro

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estrutura do capim-braquiária durante o diferimento da pastagem

This experiment was performed aiming to evaluate tiller population density, forage mass and its morphological components on pastures of Brachiaria decumbens cv. Basilisk. during deferment. The treatments encompassed four deferred grazing periods (18, 46, 74 and 121 days). A randomized block design with two replications was used. The numbers of vegetative tillers (VT), reproductive tillers (RT) and dead tillers (DT) in the pasture were determined. The masses of green leaf blade (GLBM), dead stem (DSM) and dead forage (DFM) were also determined. There was a reduction in the number of VT (from 1, 491 to 944 tiller m-2) during the deferment period. RT and DT numbers were not influenced by the deferment periods. Their averages were 211 and 456 tiller m-2, respectively. Longer deferring periods resulted in an increase in GSM (from 2, 965 to 4, 877 kg ha-1 of dry mass) and DFM (from 2, 324 to 4, 823 kg ha-1 of dry mass), but it did not influence GLBM (average of 2, 047 kg ha-1 of dry mass). In Viçosa, Minas Gerais State Brazil, Brachiaria decumbens cv. Basilisk pasture fertilized and deferred in the beginning of March must be kept deferred for about 70 days in order to conciliate both quality and quantity forage production.

Efeito do exercício físico de intensidade moderada sobre fatores de risco cardiovascular e marcadores inflamatórios de mulheres obesas no período pós-menpausa

Pós-graduação em Fisioterapia - FCT

First-principles simulation of elastic constants and electronic properties of GaN

The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].