8 resultados para Épaves
em Repositório Institucional UNESP - Universidade Estadual Paulista "Julio de Mesquita Filho"
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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We prepared a W/WO3/TiO2 bicomposite photoanode by simple electrochemical anodization of W foil, followed by cathodic electrodeposition of TiO2 and annealing at 450 C for 30 min. This photoanode shows good photoactivity under irradiation with UV and visible light. In optimized conditions, it promotes complete photoelectrocatalytic oxidation of 3.33 × 10-5 mol L-1 basic red 51 solution (which is used in hair dye) at 0.1 mol L-1 Na2SO4, pH 2.0, under a current density of 1.25 mA cm-2 and ultraviolet and visible radiation-total organic carbon removal is 94 and 88%, respectively. This effect paves the way for the sustainable solar-assisted remediation of water bodies contaminated with organic components of hair dyes. © 2013 Elsevier Ltd. All rights reserved.
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Pós-graduação em Filosofia - FFC
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Pós-graduação em Pesquisa e Desenvolvimento (Biotecnologia Médica) - FMB
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We present the results of a new, non-parametric method to reconstruct the Galactic dark matter profile directly from observations. Using the latest kinematic data to track the total gravitational potential and the observed distribution of stars and gas to set the baryonic component, we infer the dark matter contribution to the circular velocity across the Galaxy. The radial derivative of this dynamical contribution is then estimated to extract the dark matter profile. The innovative feature of our approach is that it makes no assumption on the functional form or shape of the profile, thus allowing for a clean determination with no theoretical bias. We illustrate the power of the method by constraining the spherical dark matter profile between 2.5 and 25 kpc away from the Galactic center. The results show that the proposed method, free of widely used assumptions, can already be applied to pinpoint the dark matter distribution in the Milky Way with competitive accuracy, and paves the way for future developments.
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Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in "cold-wall" reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)