138 resultados para Target Field Method


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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To the companies maintain competitive in the market, they need continuous improvement in quality and productivity. This continuous improvement can be achieved through lean manufacturing tools. The idea of lean manufacturing is to map the flow to identify the processes that don’t add value in the final product, according the customer specification, in others words is eliminate or reduce the waste on the production flow. However the implementation of lean manufacturing is not so simple and involves the resistance of the employees, lack of training and the lack of knowledge to make the implementation. The objective of this study is determinate the good practices and difficulties found by a multinational company in the field of healthy that aims implementing the Lean Manufaturing through an internal certification. The methodology used to approach the problem is a case of study that analyzes the information introduced through discussion made by a semi structured interview. The case study describes the steps to get the certification, involving the concepts of 5S, balancing, standardization and routine management. The literature and the study case showed that the good practices, such as productivity increases, safety level increases and the machine stability were accomplished, but the majority difficulties was found in cultural factors and planning. Some recommendations were proposed to the others companies, such as the elaboration of a qualification matrix and the review of the activities chronogram during the implementation. The way that the company found to implement Lean Manufacturing concepts was a creative method to show to everybody the objective and the target to be accomplished and is one way to recognize the effort through the certification

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MgTiO3 (MTO) thin films were prepared by the polymeric precursor method with posterior spin-coating deposition. The films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates and heat treated at 350 °C for 2 h and then heat treated at 400, 450, 500, 550, 600, 650 and 700 °C for 2 h. The degree of structural order−disorder, optical properties, and morphology of the MTO thin films were investigated by X-ray diffraction (XRD), micro-Raman spectroscopy (MR), ultraviolet− visible (UV−vis) absorption spectroscopy, photoluminescence (PL) measurements, and field-emission gun scanning electron microscopy (FEG-SEM) to investigate the morphology. XRD revealed that an increase in the annealing temperature resulted in a structural organization of MTO thin films. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and disordered asymmetric models. The electronic properties were analyzed, and the relevance of the present theoretical and experimental results was discussed in the light of PL behavior. The presence of localized electronic levels and a charge gradient in the band gap due to a break in the symmetry are responsible for the PL in disordered MTO lattice.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Pós-graduação em Agronomia (Ciência do Solo) - FCAV

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Electronic properties of disordered binary alloys are studied via the calculation of the average Density of States (DOS) in two and three dimensions. We propose a new approximate scheme that allows for the inclusion of local order effects in finite geometries and extrapolates the behavior of infinite systems following finite-size scaling ideas. We particularly investigate the limit of the Quantum Site Percolation regime described by a tight-binding Hamiltonian. This limit was chosen to probe the role of short range order (SRO) properties under extreme conditions. The method is numerically highly efficient and asymptotically exact in important limits, predicting the correct DOS structure as a function of the SRO parameters. Magnetic field effects can also be included in our model to study the interplay of local order and the shifted quantum interference driven by the field. The average DOS is highly sensitive to changes in the SRO properties and striking effects are observed when a magnetic field is applied near the segregated regime. The new effects observed are twofold: there is a reduction of the band width and the formation of a gap in the middle of the band, both as a consequence of destructive interference of electronic paths and the loss of coherence for particular values of the magnetic field. The above phenomena are periodic in the magnetic flux. For other limits that imply strong localization, the magnetic field produces minor changes in the structure of the average DOS. © World Scientific Publishing Company.

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Ferroelectric strontium barium niobate solid solutions had received great attention due to their excellent pyroelectric, electrooptic and photorefractive properties. Furthermore, they usually also present very interesting phase transition characteristics. In this work, polycrystalline single phase Sr 0.75 Ba 0.25 Nb 2 O 6 thin films were prepared by a hybrid chemical method and deposited on Pt/Ti/SiO 2 /Si substrates. The temperature dependence of dielectric constant was measured at different frequencies and bias field levels. The presence of two dielectric dispersion regions with relaxor characteristics was observed at distinct temperature ranges, corresponding to the ferro-paraelectric and to a structural phase transition at low temperatures, respectively. A specific dielectric dispersion region, associated with an incommensurate superstructure frequently observed in bulk samples, was not observed in this films probably due to their small grain sizes. © 2002 Taylor & Francis.

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One of the key issues which makes the waveletGalerkin method unsuitable for solving general electromagnetic problems is a lack of exact representations of the connection coefficients. This paper presents the mathematical formulae and computer procedures for computing some common connection coefficients. The characteristic of the present formulae and procedures is that the arbitrary point values of the connection coefficients, rather than the dyadic point values, can be determined. A numerical example is also given to demonstrate the feasibility of using the wavelet-Galerkin method to solve engineering field problems. © 2000 IEEE.