Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Development and test of resistive superconducting fault current limiter; acting time and its recovery conditions

Resistive-type of superconducting fault current limiters (RSFCL) have been developed for medium voltage class aiming to operate at 1 MVA power capacity and short time recovery (< 2 s). A RSFCL in form of superconducting modular device was designed and constructed using 50 m-length of YBCO coated conductor tapes for operation under 1 kV / 1 kA and acting time of 0.1 s. In order to increase the acting time the RSFCL was combined with an air-core reactor in parallel to increase the fault limiting time up to 1 s. The tests determined the electrical and thermal characteristics of the combined resistive/ inductive protection unit. The combined fault current limiter reached a limiting current of 583 A, corresponding to a limiting factor of 3.3 times within an acting time of up to 1 s.

Frequency measurements of CD3OH and (CH3OH)-C-13 optically pumped far-infrared laser lines

We report the frequency measurements of 18 optically pumped far-infrared (FIR) laser lines generated from CD3OH and (CH3OH)-C-13. We use the heterodyne technique of mixing FIR laser radiations and microwave radiation on a metal-insulator-metal point-contact tunnel diode to determine the FIR laser frequencies. Two FIR laser systems, consisting of CO2 waveguide pump lasers and Fabry-Perot FIR laser cavities, were used as optical sources. (C) 1997 Optical Society of America.

Representation of transmission lines: comparison of models and parameters distributed discrete parameters

A transmission line is characterized by the fact that its parameters are distributed along its length. This fact makes the voltages and currents along the line to behave like waves and these are described by differential equations. In general, the differential equations mentioned are difficult to solve in the time domain, due to the convolution integral, but in the frequency domain these equations become simpler and their solutions are known. The transmission line can be represented by a cascade of π circuits. This model has the advantage of being developed directly in the time domain, but there is a need to apply numerical integration methods. In this work a comparison of the model that considers the fact that the parameters are distributed (Universal Line Model) and the fact that the parameters considered concentrated along the line (π circuit model) using the trapezoidal integration method, and Simpson's rule Runge-Kutta in a single-phase transmission line length of 100 km subjected to an operation power. © 2003-2012 IEEE.

Tumour necrosis factor-alpha-induced protein 8 (TNFAIP8) expression associated with cell survival and death in cancer cell lines infected with canine distemper virus

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.