Análise da deposição de filmes finos semicondutores de GaN e GaN e Ga1-xMnxN preparados por sputtering reativo

Thin films of Ga1-xMnxN have great interest in its potential for control of electron spin (spintronics), in most cases this material is synthesized by techniques that have a high degree of control the deposition parameters, such as molecular beam epitaxy (MBE) and deposition of metalorganic chemical vapor deposition (MOCVD). The sputtering technique is an alternative route to produce such materials. Here we study the film deposition Ga1-xMnxN by reactive sputtering technique and apply enhancements such as a glove box, a residual gas analyzer and temperature control system, in order to growth films epitaxially using an analysis of the preconditions of films analyzed by spectroscopic techniques and microscopic. These procedures helped to improve the technique of deposition by cleaning substrates in an inert environment, and by the analysis of trace gases and heating the substrate holder as explained in the literature. Through the applications and comparisons it can be pointed out that the technique has the advantage of its simplicity and relatively low cost compared to MBE and MOCVD, but produces polycrystalline material

Estudo do desempenho de filmes de Ti02 como aceptor de elétrons e obtenção de fases puras de nanopartículas de Ti02: anatase e rutila, sintetizado por uma nova rota química

Pós-graduação em Ciência dos Materiais - FEIS

Caracterização estrutural de substâncias húmicas aquáticas extraídas dos rios Itapanhaú e Ribeira de Iguape

The knowledge of the structure characteristic of the Organic Matter is important for the understanding of the natural process. In this context aquatic humic substances (principal fraction) were isolated from water sample collected from the two distinct rivers, using procedure recommended for International Humic Substances Society and characterized by elemental analysis, electron paramagnetic resonance and nuclear magnetic resonance (13C NMR). The results were interpreted using principal component analysis (PCA) and the statistical analyses showed different in the structural characteristics of the aquatic humic substances studied.

Dielectric response of tungsten modified Ba(Ti0.90Zr0.10)O3 ceramics obtained by mixed oxide method

The electrical response of Ba(Ti0.90Zr0.10)O3 (BZT) ceramics obtained by the mixed oxide method as a functionof tungsten content was investigated. According to X-ray diffraction analysis the single phase BZT1W (1wt.% W doped BZT) and BZT2W (2 wt.% W doped BZT) ceramics, crystallized in a perovskite structure, wereobtained. It is also shown that tungsten substituted ceramics can be sintered at a reduced temperature whencompared to the undoped BZT. Electron paramagnetic resonance (EPR) analyses reveals that substitution ofTi4+ by W6+ causes distortion in the crystal structure changing lattice parameter. Substitution of W6+ on B-siteof ABO3 perovskite BZT ceramics shifted the phase transition to lower temperatures up to a tungsten contentof 2 wt.% leading to a relaxor-like behaviour.Keywords: donor dopant; ceramics; dielectric response; mixed oxide method

The effect of polymerization mode on monomer conversion, free radical entrapment, and interaction with hydroxyapatite of commercial self-adhesive cements

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Cr+3 distribution in Al1 and Al2 Sites of alexandrite (BeAl2O4: Cr3+) induced by annealing, investigated by optical spectroscopy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of silica surface on luminescence properties of tb3+-glutamic acid.

We studied the effect of silica surface on luminescence properties of terbium complex by spectroscopy characterization, where microparticles of mesoporous silica type MSU-X was prepared. We used silica with different surface: calcined, washed, functionalized with 3- aminopropyl-triethoxysilane (APTES), and 3-glycidoxypropyl-trimethoxysilane (GPTMS); impregnated with Tb3+-glutamic acid complex. The obtained materials were characterized by scanning electron microscopy, porosity measurements, small-angle X-ray scattering, as structural characterization; Fourier transform infrared and luminescence spectroscopy, as spectroscopy characterization. Finally, we observed that functional groups at the silica surface lead to changes on luminescent properties of the final materials. The observed shift of the absorption and emission bands can be assigned to the effect of the functional groups of mesoporous silica.

Estudo da relação de ordem-desordem estrutural em nanopartículas de TiO2

Pós-graduação em Química - IQ

Non-Zeeman splitting for a spin-resolved STM with a Kondo adatom in a spin-polarized two-dimensional electron gas

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Optical and electrical diagnostics measurements of plasmas generated in aromatic compounds

Plasmas generated in de discharges in aromatic compounds have been used for several years in polymerization processes. The chemical kinetics developed in such a plasma environment are extremely complicated. Therefore it is extremely important to set up optical and electrical diagnostics in order to establish the kinetics of the film growth, In this work we studied de plasmas generated ill low-pressure atmospheres of benzene for different values of gas pressure and power coupled to the discharge. The pressure range varied from 0.2 to 1.0 mbar for electric power running from 4 to 25 W, the main chemical species observed within the discharge were CH, H and C. It was observed that the CH relative concentration increases continuously with the power in the range investigated. The electron temperature varied from 0.5 to 2.0 eV with the increase of the power, for a fixed value of gas pressure. The relative dielectric constant of the plasma polymerized benzene was kept around 4.8 from 100 Hz to 10 kHz, presenting a resonance near 25 kHz. This electric behaviour of the film was the same fur different conditions of polymeric film deposition, (C) 1997 Elsevier B.V. S.A.

Differential scanning calorimetry, x-ray diffraction and F-19 nuclear magnetic resonance investigations of the crystallization of InF3-based glasses

Results of differential scanning calometry (DSC), x-ray diffraction (XRD), and F-19 nuclear magnetic resonance (NMR) of InF3-based glasses, treated at different temperatures, ranging from glass transition temperature (T-g) to crystallization temperature (T-c), are reported. The main features of the experimental results are as follows. DSC analysis emphasizes several steps in the crystallization process. Heat treatment at temperatures above T-g enhances the nucleation of the first growing phases but has little influence on the following ones. XRD results show that several crystalline phases are formed, with solid state transitions when heated above 680 K, the F-19 NMR results show that the spin-lattice relaxation, for the glass samples heat treated above 638 K, is described by two time constants. For samples treated below this temperature a single time constant T-1 was observed. Measurements of the F-19 spin-lattice relaxation time (T-1), as a function of temperature,made possible the identification of the mobile fluoride ions. The activation energy, for the ionic motion, in samples treated at crystallization temperature was found to be 0.18 +/- 0.01 eV. (C) 1998 American Institute of Physics.

Electron time-of-flight measurements in sulfur interpreted via an extra surface mobility channel

Time-of-flight measurements were carried out in orthorhombic sulfur for various fields, ranging from -2 to -20 kV/cm. No dependence of the mobility with the electric field was found but the current, normalized by the initial current, showed an electric field dependence at small times, decaying faster for larger electric field. After the failure of the usual models in explaining the resultsincluding the assumption of depth-dependent density of trapsa model assuming an extra mobility channel near the surface provided a reasonable set of parameters independent of the electric field. The measurements were carried out at 8.5, 29, 53, 68, and 79°C. © 1988 The American Physical Society.

Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.

Search for a narrow, spin-2 resonance decaying to a pair of Z bosons in the qq̄ℓ+ℓ- final state

Results are presented from a search for a narrow, spin-2 resonance decaying into a pair of Z bosons, with one Z-boson decaying into leptons (e+e- or μ+μ-) and the other into jets. An example of such a resonance is the Kaluza-Klein graviton, GKK, predicted in Randall-Sundrum models. The analysis is based on a 4.9 fb-1 sample of proton-proton collisions at a center-of-mass energy of 7 TeV, collected with the CMS detector at the LHC. Kinematic and topological properties including decay angular distributions are used to discriminate between signal and background. No evidence for a resonance is observed, and upper limits on the production cross sections times branching fractions are set. In two models that predict Z-boson spin correlations in graviton decays, graviton masses are excluded lower than a value which varies between 610 and 945 GeV, depending on the model and the strength of the graviton couplings. © 2012 CERN.

Measurements of t(t)over-bar Spin Correlations and Top-Quark Polarization Using Dilepton Final States in pp Collisions at root s=7 TeV

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)