Morphological characterization of Langmuir-Blodgett films from polyaniline and a ruthenium complex (Rupy): influence of the relative concentration of Rupy

We report on the use of dynamic scale theory and fractal analyses in a study of the growth stages of Langmuir-Blodgett (LB) films of polyaniline and a neutral biphosphinic ruthenium complex, namely mer-[ RuCl3 (dppb)(py)] (dppb = 1,4-bis(diphenylphosphine) buthane, py = pyridine), Rupy. The LB films were deposited onto indium-tin-oxide substrates and characterized with atomic force microscopy. From the granular morphology exhibited by the films one could infer growth processes inside and outside the grains. Growth outside was found to follow the Kardar-Parisi-Zhang model, with fractal dimensions of about 2.7. As one would expect, inside the grains the morphology is close to a Euclidian surface with fractal dimension of about 2.

Oriented growth of Bi3.25La0.75Ti3O12 thin films on RuO2/SiO2/Si substrates by using the polymeric precursor method: Structural, microstructural and electrical properties

c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on a (100) SiO2/Si substrate by the polymeric precursor method. X-ray diffraction and atomic force microscope investigations indicate that the films exhibit a dense, well crystallized microstructure having random orientations with a rather smooth surface morphology. The electrical properties of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on RuO2 bottom electrode leaded to a large remnant polarization (P-r ) of 17.2 mu C/cm(2) and (V-c ) of 1.8 V, fatigue free characteristics up to 10(10) switching cycles and a current density of 2.2 mu A/cm(2) at 5 V. We found that the polarization loss is insignificant with nine write/read voltages at a waiting time of 10,000 s. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.

Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Correlation between the surface morphology and structure and the photoluminescence of amorphous PbTiO3 thin films obtained by the chemical route

A polymeric precursor method was used to synthesis PbTiO3 amorphous thin film processed at low temperature. The luminescence spectra of PbTiO3 amorphous thin films at room temperature revealed an intense single-emission band in the visible region, the visible emission band was found to be dependent on the thermal treatment history, Photoluminescence properties Versus different annealing temperatures were investigated. The experimental results (XRD, AFM, FL) indicate that the nature of photoluminescence (PL) must be related to the disordered structure of PbTiO3 amorphous thin films, Copyright (C) 2000 John Wiley & Sons, Ltd.

Microstructural and ferroelectric properties of PbZr1-xTi(x)O(3) thin films prepared by the polymeric precursor method

The polymeric precursor method was employed in the preparation of PZT thin films on Pt(111)Ti/SiO2/Si(100) substrates. X-ray diffraction patterns revealed the polycrystalline nature of the PZT (53:47) thin films, which had a granular structure and a grain size of approximately 70 nm. A 350-nm thick film was obtained by running three cycles of the dip-coating/heating process. Atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (= 2.0 nm). The PZT (53:47) thin films annealed at 700 degreesC showed a well-saturated hysteresis loop. The C-V curves of perovskite thin film displayed normal ferroelectric behavior, while the remanent polarization (2P(r)) and coercive field (E-e) of the film deposited and measured at room temperature were 40 muC/cm(2) and 110 kV/cm, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Surface morphology and molecular organization of lignins in Langmuir-Blodgett films

Atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR) are used to investigate molecular organization in Langmuir-Blodgett (LB) films of two kinds of lignins. The lignins were extracted from sugar cane bagasse using distinct extraction processes and are referred to here as ethanol lignin (EL) and saccharification lignin (SAC). AFM images show that LB films from EL have a flat surface in comparison with those from SAC. For the latter, ellipsoidal aggregates are seen oriented perpendicularly to the substrate. This result is confirmed by a combination of transmission and reflection FTIR measurements, which also point to lignin aggregates preferentially oriented perpendicularly to the substrate. For LB films from EL, on the other hand, aggregates are preferentially oriented parallel to the substrate, again consistent with the flat surface observed in AFM data. The vibrational spectroscopy data for cast films from both lignins show random molecular organization, as one should expect.

Holographic recording in [Sb(Po-3)(3)](n)-Sb2O3 glassy films by photoinduced volume and refraction index changes

Glassy films of 0.2[Sb(PO3)(3)]-0,8Sb(2)O(3) with 0.8 mum-thickness were deposited on quartz substrates by electron beam evaporation. A contraction in the film thickness (photoinduced decrease in volume) and photobleaching effect associated with a decrease of up to 25% in the index of refraction has been observed in the films after irradiation near the bandgap (3.89 eV), using the 350.7 nm (3.54 eV) Kr+ ion laser line with 2.5 W/cm(2) for 30 min. A loss of 30% in the phosphorus concentration was measured by wavelength dispersive X-ray microanalysis in the film after laser irradiation with 5.0 W/cm(2) for 1.0 h. These photoinduced changes in the samples are dependent on the power density and intensity profile of the laser beam. Using a Lloyd's mirror setup for continuous wave holography it was possible to record holographic gratings with period from 500 nm up to 20 mum and depth profile of similar to50 nm in the films after laser irradiation with 5.0 W/cm(2) for 1 h. Real-time diffraction efficiency measurements have shown that ultraviolet irradiation induces first a refractive index grating formation, and after this, the photocon traction effect takes place generating an irreversible relief grating. Diffraction efficiency up to 10% was achieved for the recorded gratings. 3D-refraction index measurements and atomic force microscopy images are presented. (C) 2004 Elsevier B.V. All rights reserved.

Preparation, structural and optical characterization of BaWO4 and PbWO4 thin films prepared by a chemical route

Polycrystalline BaWO4 and PbWO4 thin films having a tetragonal scheelite structure were prepared at different temperatures. Soluble precursors such as barium carbonate, lead acetate trihydrate and tungstic acid, as starting materials, were mixed in aqueous solution. The thin films were deposited on silicon, platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and specular reflectance infrared Fourier transform spectroscopy, respectively. Nucleation stages and surface morphology evolution of thin films on silicon substrates have been studied by atomic force microscopy. XRD characterization of these films showed that BaWO4 and PbWO4 phase crystallize at 500 degreesC from an inorganic amorphous phase. FTIR spectra revealed the complete decomposition of the organic ligands at 500 degreesC and the appearance of two sharp and intense bands between 1000 and 600 cm(-1) assigned to vibrations of the antisymmetric stretches resulting from the high crystallinity of both thin films. The optical properties were also studied. It was found that BaWO4 and PbWO4 thin films have Eg = 5.78 eV and 4.20 eV, respectively, of a direct transition nature. The excellent microstructural quality and chemical homogeneity results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of BaWO4 and PbWO4 thin films. (C) 2003 Elsevier Ltd. All rights reserved.

Interface morphology snapshots of vertically segregated thin films of semiconducting polymer/polystyrene blends

We present atomic force microscopic images of the interphase morphology of vertically segregated thin films spin coated from two-component mixtures of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) and polystyrene (PS). We investigate the mechanism leading to the formation of wetting layers and lateral structures during spin coating using different PS molecular weights, solvents and blend compositions. Spinodal decomposition competes with the formation of surface enrichment layers. The spinodal wavelength as a function of PS molecular weight follows a power-law similar to bulk-like spinodal decomposition. Our experimental results indicate that length scales of interface topographical features can be adjusted from the nanometer to micrometer range. The importance of controlled arrangement of semiconducting polymers in thin film geometries for organic optoelectronic device applications is discussed. (c) 2007 Elsevier Ltd. All rights reserved.

Ba1-xSrxTiO3 thin films by polymeric precursor method

Stoichiometric Ba1-xSrxTiO3 (BST; x = 0.4) thin films were prepared by the polymeric precursor method. High quality polycrystalline films of BST with low roughness (approximate to 3 nm) were obtained from a Pt/Ti/SiO2/Si substrate deposited by spin-coating technique. Microstructure and morphological evaluation were done using grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Grazing incident angle XRD characterization of these films showed that BST phase crystallizes at 600 degrees C from an inorganic amorphous matrix. No intermediate crystalline phase was identified. A linear relationship between roughness and grain size was observed. (C) 2000 Elsevier B.V. B.V. All rights reserved.

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi3.25La0.75Ti3O12-BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P-r and a coercive field E-c of 3.9 mu C/cm(2) and 70 kV/cm for the film annealed in the microwave oven and 20 mu C/cm(2) and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in nonvolatile memories. on the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories. (c) 2005 Elsevier B.V. All rights reserved.

Microstructure and corrosion resistance of inorganic-organic (ZrO2-PMMA) hybrid coating on stainless steel

Zirconia-polymethylmetacrylate hybrids prepared by a sol-gel method were deposited by dip-coating on stainless steel to improve the resistance against wet corrosion. The effect of the concentration of polymethylmetacrylate and the number of coating applications on the microstructure and corrosion performance of coated samples was investigated. The microstructural properties of samples was analyzed by scanning electron and atomic force microscopy, adhesion tests and profilemeter measurements. The electrochemical corrosion was evaluated through potentiodynamic polarization curves at room temperature. Results show that the sample prepared with 17 vol.% of polymethylmethacrylate has a maximum corrosion resistance, smaller roughness, are hermetic and adherent to the substrate. This film increases the life time of the stainless steel by a factor 30. (C) 1999 Elsevier B.V. B.V. All rights reserved.

Preparation and characterization of PAni-PMMA dispersions

Blends of polyaniline (PAni) and poly(methyl methacrylate) (PMMA) have been produced using core-shell particle synthesis, which is advantageous because it allows changing surface-related properties of PMMA with relatively small amounts of PAW and without the use of organic solvents. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements indicated that the deposition of pollyaniline seems to alter the regular shape of the primary acrylic latex particles. The coverage of PMMA particles by PAW was confirmed by FTIR measurements, where distinct data were obtained from the transmission and diffuse reflectance modes, since the latter is surface sensitive. The zeta potential, which is also a surface-related property, increased with the contents of PAW, as the shells probably became protonated with PAW in the emeraldine salt form. Coverage with PAW did not affect the thermal bulk properties of the PMMA shells.

Analysis of the topography of a Bragg grating in chalcogenide glass

Relief Bragg gratings were recorded on the surface of Ga-Ge-S glass samples by interference of two UV laser beams at 351 nm, Scanning force microscopy was used to perform a 3D image analysis of the resulting surface topography, which shows the superposition of an imprinted grating over the base topography of the glass. An important question regarding the efficiency of the grating is to determine to what extent the base topography reduces the intended coherent scattering of the grating because of its stochastic character. To answer this question we separated both base and grating structures by Fourier filtering, examined both spatial frequency and roughness, and determined the correlation. (C) 2001 Elsevier B.V. B.V. All rights reserved.

Photoinduced structural changes in antimony polyphosphate based glasses

A photocontraction effect in amorphous films of the binary glass system 0.20 [Sb(PO3)(3)](n)-0.80 Sb2O3 has been observed after UV irradiation using the 350.7 nm Kr+ ion laser line with 5.0 W/cm(2). Good optical quality films up to 4.0 mum were deposited on silica substrates at room temperature in vacuum by electron beam physical vapor deposition (EB-PVD) and characterized using WDX, XRD, optical absorption, infrared reflectance, profilometry and atomic force microscopy (AFM) techniques. Very stable glasses were prepared by the melt quenching technique and used as evaporation source for the production of films. The photoinduced structural change (PSC) was observed as a variation of about 6% in the film thickness and this effect is accompanied by a photobleaching of the irradiated area with a blue shift of the optical absorption edge. Otherwise this photoinduced change in the film thickness is very sensitive to the variations in the shape and intensity of the laser beam; therefore several possibilities in optical recording arise from these results. (C) 2003 Published by Elsevier B.V.