Proposta de modelo para obtenção de momentos fletores de lajes nervuradas

In building the structural part that primarily supports loads, wich then makes the effort to transfer the remaining is the slab wich the forwards the effort to beam and then to the pillars. As architectural plans requir more complex, the great the spans, eg cases of slabs garages building, since it is not very useful when you put many pillars, over the number of vacancies. Major spans in dealing with solid slbs mean greater thicknesses.....

Implementação do REUNI na UTFPR e as particularidades do câmpus de Medianeira

Pós-graduação em Educação - FFC

Parcerias entre municípios paulistas e entidades privadas com fins lucrativos para a oferta de educação infantil: análise dos instrumentos jurídicos adotados

Pós-graduação em Educação - IBRC

Vivências acadêmicas: interferências na adaptação, permanência e desempenho de graduandos de cursos de engenharia de uma instituição pública federal

Pós-graduação em Educação - FFC

Influence of the concentration of Sb2O3 on the electrical properties of SnO2 varistors

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Piezoresponse force microscopy behaviour of Bi4Ti3O12 ceramics with various excess bismuth

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)O3:2V ceramics as characterized by piezoresponse force microscopy

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

O acesso à universidade pública no Brasil e a questão social: uma análise dos dados do relatório do vestibular da Universidade Estadual Paulista Julio Mesquita Filho UNESP

This work has as a central concern in analyze the causes of the still limited access of young Brazilians to public higher education in socioeconomic and cultural.In Brazil, onçy 14,4% of the young between 18 and 24 years old attend this educational level.If we consider that the public university offer just 1/4 of the vacancies, can be affirmed that this institutions are not able to attend neither 4% of the young between 18 and 24.Brazil shows,in this level of education,a lower access that most of its neighbors: Argentina(40%), Venezuela(26%), Chile(20%),Bolivia(20%).In this work were analyzed the data reports of entrance exam of Universidade Estadual Paulista (Unesp) entre 2004 e 2009,prepared by Fundaçao para o Vestibular da Universidade Estadual Paulista(Vunesp). In this analysis,can be noted the influence of some aspects socioeconomic and cultural related to possibilities os the young acces to public univercity. Stand out among these: family income,the possibility to dadicate only to studies and attend preparatory courses,as well as the parents level of education.

Fabricação e caracterização de cerâmicas multifuncionais à base de CaSr3Cu3-xTi4O12 para aplicações ópticas e eletro-eletrônicas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Luminescence of Eu3+ in the thin film heterojunction GaAs/SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution

Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

A relationship between structural and electronic order-disorder effects and optical properties in crystalline TiO2 nanomaterials

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

X-ray photoelectron spectroscopy study on sintered Pb1-xLaxTiO3 ferroelectric ceramics

The Pb1-xLaxTiO3 sintered ferroelectric ceramics with x equal to 0, 0.10, 0.15, 0.20, and 0.30 were studied by X-ray photoelectron spectroscopy (XPS). The binding energy of the Ti 2p lines is consistent with only one chemical state, Ti4+. on the other hand, in the case of Pb 4f and 0 Is XPS spectra, apart from the main peaks attributed to the lattice ions, minor peaks related to the surface states were also observed. The presence of Pb-0 state on the surface of all samples was due to the reduction of lead ions caused by the preferential removal of the oxygen ions after sputtering. The non observation of Ti3+ ions confirms that the mechanism of charge compensation that should occurs owing to the substitution of Ph2+ by La3+ is due to the preferential formation of Pb site vacancies, and not to a reduction from Ti4+ to Ti3+ states. Within the limits of the present experiment, there is no evidence of the existence of non-equivalent Pb, Ti, and La sites as the Pb1-xLaxTiO3 ceramic changes from a normal to a relaxor ferroelectric state. (c) 2006 Elsevier B.V. All rights reserved.

Effect of pressure-assisted heat treatment on photoluminescence emission of α-Bi2O3 needles

Materials with high photoluminescence (PL) intensity can potentially be used in optical and electronic devices. Although the PL properties of bismuth(III) oxide with a monoclinic crystal structure (α-Bi2O3) have been explored in the past few years, methods of increasing PL emission intensity and information relating PL emission to structural defects are scarce. This research evaluated the effect of a pressure-assisted heat treatment (PAHT) on the PL properties of α-Bi2O3 with a needlelike morphology, which was synthesized via a microwave-assisted hydrothermal (MAH) method. PAHT caused an angular increase between the [BiO6]-[BiO6] clusters of α-Bi2O3, resulting in a significant increase in the PL emission intensity. The Raman and XPS spectra also showed that the α-Bi2O3 PL emissions in the low-energy region (below ∼2.1 eV) are attributed to oxygen vacancies that form defect donor states. The experimental results are in good agreement with first-principles total-energy calculations that were carried out within periodic density functional theory (DFT).