Dielectric and impedance properties of Nd3/2Bi3/2Fe5O12 ceramics

The polycrystalline sample of Nd3/2Bi3/2Fe5O12 was prepared by a high- temperature solid-state reaction technique. Preliminary X-ray structural analysis exhibits the formation of a single-phase tetragonal structure at room temperature. Microstructural analysis by scanning electron microscopy shows that the sintered sample has well defined grains. These grains are distributed uniformly throughout the surface of the sample. Detailed studies of dielectric response at various frequencies and temperatures exhibit a dielectric anomaly at 400 A degrees C. The electrical properties (impedance, modulus and conductivity) of the material were studied using a complex impedance spectroscopy technique. These studies reveal a significant contribution of grain and grain boundary effects in the material. The frequency dependent plots of modulus and the impedance loss show that the conductivity relaxation is of non-Debye type. Studies of electrical conductivity with temperature demonstrate that the compound exhibits Arrhenius-type of electrical conductivity. Study of ac conductivity with frequency suggests that the material obeys Jonscher's universal power law.

Optical and Structural Properties of Zein-Xanthan Gum Biofilms

Structural and optical characteristics of zein-based films produced with different xanthan gum concentrations have been studied in this work. Scanning electronic microscopy (SEM) and optical microscopy (OM) were performed to identify if the incorporation of the material into the matrix film, formed a homogeneous structure, as well as to characterize its constituents as the colour and shape. SEM showed a homogeneous matrix for the control (0% xanthan) with good lipid distribution. However, when the samples were investigated by OM, lipids globules in the control biofilm appeared larger and more dispersed in the matrix than the others samples. Transparency/opacity test measurements by UV-VIS analysis indicated that the addition of xanthan to the film matrix lowered significantly its transparency properties Overall, the addition of xanthan gum favoured lipid dispersion in the matrix, making biomaterials more homogeneous, although with less transparency.

Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres

Pure-and lanthanun doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. Annealing in static air and oxygen atmosphere was performed at 700 degrees C for 2 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant and dissipation factor were measured in the frequency region from 1 kHz to 1 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. Films annealed in static air possess a dielectric constant higher than films annealed in oxygen atmosphere due to differences in the grain size, crystallinity and structural defects. A regularly shaped hystereses loop is observed after annealing in static air. The obtained results suggest that the annealing in oxygen atmosphere can increase the trapped charge and the relaxation phenomenon. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Water at interfaces and its influence on the electrical properties of adsorbed films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis, characterization and catalytic properties of nanocrystaline Y2O3-coated TiO2 in the ethanol dehydration reaction

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Microstructural and electric properties of bismuth-layered structured ceramics - SrBi2(Ta1-xNbx)O-9

Ceramic samples of SrBi2(Nb1-xTax)O-9 (0 less than or equal to x less than or equal to 1) were prepared by the solid state reaction method in order to investigate their structural and electrical features as well as obtain useful information to improve the properties of SrBi2(Nb1-xTax)O-9 as a thin film. The X-ray diffraction patterns and the scanning electronic microscopy photomicrographs show no secondary phases but the formation of a solid-state solution for all the composition. The ac conductivity of the samples, measured at 25 degreesC and 100 kHz frequency, decreases with the increase of Ta content. Such results were explained by intrinsic conductivity of pure components.

EFFECT OF CR2O3 ON THE ELECTRICAL-PROPERTIES OF MULTICOMPONENT ZNO VARISTORS AT THE PREBREAKDOWN REGION

The effect of Cr2O3 on the electrical properties of the multicomponent ZnO varistors was investigated using voltage-current curves and impedance spectroscopy. The structure and morphological modifications were analysed by X-ray diffraction and scanning electron microscopy, respectively. It was observed in samples with addition 0.1 mol% Cr2O3 that there was an improvement in the electrical properties of the varistors, but the increase in concentration had a deleterious effect on the potential barrier at the grain boundary. The excess Cr2O3 segregates at the grain-boundary region and increases the donor concentration, leading to a higher leakage current.

Effect of oxidizing and reducing atmospheres on the electrical properties of dense SnO2-based varistors

The SnO2 based varistor systems recently presented in the literature appear to have a promising potential in commercial applications. Experimental evidence shows that there is a dependence of nonlinear constant values with thermal treatment under different atmospheres. Thermal treatments in oxygen and nitrogen rich atmospheres at 900 degreesC prove this dependence, indicating that the nonlinear constant values are significantly lower when the material is submitted to a nitrogen atmosphere. Moreover, electrical properties can be restored when the varistor is subjected to thermal treatment at the same temperature in an oxygen atmosphere, indicating that the mechanism seems to be reversible. This paper discusses this behavior focusing in the grain boundary region. Ta2O5 mol% concentrations are also analyzed and the results indicate an optimum Ta2O5 concentration of 0.05 mol% for the electrical properties (alpha = 44 and E-B = 6150 V cm(-1)). (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Microstructural, dielectric and ferroelectric properties of calcium-modified lead titanate thin films derived by chemical processes

Ferroelectric Pb1-xCaxTiO3 (x = 0.24) thin films were formed on a Pt/Ti/SiO2/Si substrate by the polymeric precursor method using the dip-coating technique for their deposition. Characterization of the films bq X-ray diffraction showed a perovskite single phase with a tetragonal structure after annealing at 700 degreesC. Atomic force microscopy (AFM) analyses showed that the film had a smooth and crack-free surface with low surface roughness. In addition, the PCT thin film had a granular structure with an 80 nm grain size. The thickness of the films observed by the scanning electron microscopy (SEM) is 550 nm and there is a good adhesion between the film and substrate. For the electrical measurements metal-ferroelectric-metal of the type capacitors were obtained, where the thin films showed good dielectric and ferroelectric properties. The dielectric constant and dissipation factor at 1 kHz and measured at room temperature were found to be 457 and 0.03. respectively. The remanent polarization and coercive field for the: deposited films were P-r = 17 muC/cm(2) and E-c = 75 kV/cm, respectively. Moreover. The 550-nm-thick film showed a current density in the order of 10(-8) A/cm(2) at the applied voltage of 2 V. The high values of the thin film's dielectric properties are attributed to its excellent microstructural quality and the chemical homogeneity obtained by the polymeric precursor method. (C) 2001 Elsevier science Ltd. All rights reserved.

Oriented growth of Bi3.25La0.75Ti3O12 thin films on RuO2/SiO2/Si substrates by using the polymeric precursor method: Structural, microstructural and electrical properties

c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on a RuO2 top electrode deposited on a (100) SiO2/Si substrate by the polymeric precursor method. X-ray diffraction and atomic force microscope investigations indicate that the films exhibit a dense, well crystallized microstructure having random orientations with a rather smooth surface morphology. The electrical properties of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on RuO2 bottom electrode leaded to a large remnant polarization (P-r ) of 17.2 mu C/cm(2) and (V-c ) of 1.8 V, fatigue free characteristics up to 10(10) switching cycles and a current density of 2.2 mu A/cm(2) at 5 V. We found that the polarization loss is insignificant with nine write/read voltages at a waiting time of 10,000 s. Independently of the applied electric field the retained switchable polarization approached a nearly steady-state value after a retention time of 10 s.

Structural and electrical characterization of semiconducting barium-lead-titanate ceramics

BaTiO3 is usually doped to achieve the temperature stability required by device applications, as well as to obtain a large positive temperature coefficient anomaly of resistivity (PTCR). Uniform distribution of dopants among the submicron dielectric particles is the key for optimal control of grain size and microstructure to maintain a high reliability. The system Ba0.84Pb0.16TiO3 was synthesized from high purity BaCO3, TiO2, PbO oxide powders as raw materials. Sb2O3, MnSO4 and ZnO were used as dopants and Al2O3, TiO2 and SiO2 as grain growth controllers. Phase composition was analyzed by using XRD and the microstructure was investigated by SEM. EDS attached to SEM was used to analyze phase composition specially related to abnormal grain growth. Electrical resistivities were measured as a function of temperature and the PTCR effect characterized by an abrupt increase on resistivity.

Influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films produced by the Pechini method

SnO2:Sb multi-layer coatings were prepared by the Pechini method. An investigation was made of the influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films. The use of a multi-layer system as an alternative form of increasing the packing and. thus. decreasing porosity proved to be efficient, decreasing the system's resistivity without altering its optical properties. (C) 2002 Elsevier B.V. B.V. All rights reserved.

The role of oxygen vacancies on the microstructure development and on the electrical properties of SnO2-based varistors

Variations on the microstructure development and on the electrical properties of SnO2-based varistors are discussed on the basis of the oxygen vacancies created or annihilated by the presence of different additives. Electron paramagnetic resonance (EPR) analysis of sintered samples evidenced a substantial increase in the paramagnetic oxygen vacancies concentration when Nb2O5 is added to the SnO2 center dot Co3O4 system. on the other hand, the observed diminution in the concentration of such species after the addition of Fe2O3 indicates solid solution formation. The quantification of paramagnetic oxygen vacancies allowed to confirm the proposed substitutions taking place in the lattice during sintering. These findings are supported by scanning electron microscopy, by density measurements and by current density versus electric field curves. The characterization of secondary phases through EDS assisted SEM and TEM is also reported in this work.

Influence of Ta2O5 on the electrical properties of ZnO- and CoO-doped SnO2 varistors

SnO2-based varistors doped with 0.5% cobalt, 0.5% zinc and various tantalum amounts were prepared by the solid-state route. Experimental evidence shows that small quantities of Ta2O5 improve the nonlinear properties of the samples significantly. It was found that samples doped with 0.05 mol% Ta2O5 exhibit the highest density (98.5%), the lowest electric breakdown field (E-b = 1050 V/cm) and the highest coefficient of nonlinearity (alpha = 11.5). The effect of Ta2O5 dopant could be explained by the substitution of Ta5+ by Sn4+. (C) 2004 Elsevier Ltd and Techna S.r.l. All rights reserved.

Glass structure and ion dynamics of lead-cadmium fluorgermanate glasses

Glass structure and fluorine motion dynamics are investigated in lead-cadmium fluorgermanate glasses by means of differential scanning calorimetry, Raman scattering, x-ray absorption (EXAFS), electrical conductivity (EC), and F-19 nuclear magnetic resonance (NMR) techniques. Glasses with composition 60PbGeO(3)-xPbF(2)-yCdF(2) (in mol %), with x+y=40 and x=10, 20, 30, 40, are studied. Addition of metal fluorides to the base PbGeO3 glass leads to a decrease of the glass transition temperature (T-g) and to an enhancement of the ionic conductivity properties. Raman and EXAFS data analysis suggest that metagermanate chains form the basic structural feature of these glasses. The NMR study leads to the conclusion that the F-F distances are similar to those found in pure crystalline phases. Experimental results suggest the existence of a heterogeneous glass structure at the molecular scale, which can be described by fluorine rich regions permeating the metagermanate chains. The temperature dependence of the NMR line shapes and relaxation times exhibits the qualitative and quantitative features associated with the high fluorine mobility in these systems. (C) 2004 American Institute of Physics.