89 resultados para Semiconductors orgànics


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Dissipadores de calor recobertos com filmes de diamante CVD foram desenvolvidos para acoplar a semicondutores, utilizando-se do Laboratório de Deposição de Filmes de Diamante CVD, na UNESP - Campus de Guaratinguetá e o Laboratório de Diamantes da Universidade São Francisco, em Itatiba, SP. Analisou-se o filme de diamante CVD sobre o silício, para emprego como dissipador de calor, porque o filme de diamante CVD pode ter o valor da condutividade térmica até cinco vezes superior ao do cobre e de dez vezes a do alumínio. Os filmes foram obtidos via deposição através de reator de filamento quente, trabalhando-se com vários filamentos retilíneos em paralelo, resultando assim em um processo que visou obter um filme mais uniforme e com grande área de deposição. Os dados para análises da composição química superficial dos filmes foram obtidos por Difração de Raios-X, Dispersão de Energia de Raios-X e para a verificação da morfologia e espessura do filme foi utilizada a Microscopia Eletrônica de Varredura. Para a verificação do comportamento da temperatura sobre o dissipador com o filme de diamante CVD foi utilizada uma câmera de imagem termográfica, marca Fluke, modelo Ti 40 FT. Foram obtidos filmes de 2 e 10 ?m sobre o silício. Estas espessuras ainda não oferecem um desempenho mecânico que o torne autosustentado. Do ponto de vista de desempenho térmico as análises mostraram que, mesmo com pequena espessura, o filme de diamante CVD apresentou bom resultado experimental. Os principais desafios de construção para esse dissipador de calor são a obtenção do filme com espessura acima de um mm e a garantia da qualidade do filme com a repetitividade do processo em cujo caso torna-se necessário definir as dimensões do dissipador antes da deposição do filme.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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The solar energy is far the largest source of energy available in earth and has attracted for milleniuns, the attention and interest for a rational use. The solar energy which strikes the Earth in one hour is bigger than the whole consume of energy in Earth in one year. Among the forms of transformation of this clean, renewable energy, the electrical conversion, photovoltaic cells, have the materials based on silicon or germanium semiconductors due to its technology and production processes involved still have a high production cost. An alternative to this solar cell is based on a synthetic dye and a semiconductor nanocrystalline TiO2, titanium dioxide, called DSC (Dye-Sensitized Cells), which have a cost of up to 80% lower than silicon cells

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In this work, it is presented a novel method for calculating some intrinsic parameters such as capture mean time, thermic emission mean time, capture probability and noise gain on quantum well infrared photodetectors. Such devices are built by depositing layers of semiconductors of different energy gap, forming quantum wells. The present method uses rate equations to describe the occupation of discrete states of the quantum wells, that together with noise gain equations given in literature, are solved self consistently. The input data of the method is experimental measurement of dark current (current measured with no relevant incident photon) versus applied bias. In order to validate this approach, the values obtained were compared with results from literature

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Nanostructured composites based on titanium dioxide have been studied in order to improve optical and photo-catalytic properties, as well as their performance in gas sensors. In this work, titanium and tin dioxides were simultaneously synthesized by the polyol method resulting in TiO2 platelet coated with SnO2 nanoparticles as was observed by scanning electron microscopy. The thermal analysis showed that the combined synthesis promotes more easily the crystallization of the TiO2 rutile phase. The composite obtained after heat treatment at 500 degrees C showed to be formed of almost only rutile phases of both oxides. The optical properties analyzed by UV-Vis spectroscopy showed that the combined oxides have higher absorbance, which reinforces a model found in the literature based on the flow of photo-generated electrons to the conduction band of SnO2 delaying the recombination of charges.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Nanostructured composites based on titanium dioxide have been studied in order to improve optical and photo-catalytic properties, as well as their performance in gas sensors. In this work, titanium and tin dioxides were simultaneously synthesized by the polyol method resulting in TiO2 platelet coated with SnO2 nanoparticles as was observed by scanning electron microscopy. The thermal analysis showed that the combined synthesis promotes more easily the crystallization of the TiO2 rutile phase. The composite obtained after heat treatment at 500 °C showed to be formed of almost only rutile phases of both oxides. The optical properties analyzed by UV-Vis spectroscopy showed that the combined oxides have higher absorbance, which reinforces a model found in the literature based on the flow of photo-generated electrons to the conduction band of SnO2 delaying the recombination of charges.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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The present work aims to study one-dimensional nanomaterials semiconductors grown via by phase systems Grande oxides Technological Interest for applications in gas sensors. The Used material was tin oxide (SnO2) for their functional properties, and the grow method was the Polymeric Precursors. The films grown were the nanomaterials about substrates of alumina, deposited via spin coating technique, followed by heat treatment at 300C for 1 hour and 650C for 2 hours. Later the films of Performance sensors (sensitivity, speed response, selectivity, and stability) will be in avaliated in a hermetic chamber with controlled atmosphere and temperature. The synthesized materials were its structural and morphological properties characterized in atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (not have this result with Me). We sought to investigate one influence of different conditions for obtaining films (Variation Layers number) in structural and microstructural properties of semiconductors oxides. The synthesis method proved very effective, generating films with micro definitely, uniformity of the nanoparticles and hum high level of porosity, what makes the material of a viable final paragraph applicability