Monitoring the process mean and variance using a synthetic control chart with two-stage testing

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A single statistic for monitoring the covariance matrix of bivariate processes

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Generalized soldering of +/- 2 helicity states in D=2+1

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Analytical optimization of spread and change of exponential decay of generalized Wannier functions in one dimension

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

GENERALIZED HEAVISIDE FUNCTIONS IN THE COLOMBEAU THEORY CONTEXT

We defined generalized Heaviside functions for a variable x in R-n, and for variables (x, t) in R-n x R-m. Then study properties such as: composition, invertibility, and association relation (the weak equality). This work is developed in the Colombeau generalized functions context.

Multivariated variance analysis applied to biological experiments: An analysis with curves of rats teeth growth as influenced by colchicine

The evaluation of the growth of incisor teeth of rats as influenced by colchicine (doses of 25, 50, 100 and 200 μg/kg) injected during 10 and 18 days is performed using a multivariated variance analysis, which allowed a global view of the results, showing that: there are differences in the growth of teeth of control group (untreated rats) and those treated with colchicine, in the measurements made at the 4th, 7th and 10th days of experiment); there is no difference in the growth of the teeth between the groups treated during 10 and 18 days, except in the measurements made at the 7th day; there is no influence of the doses of colchicine in the group treated during 10 days and in the group treated during 18 days - only at the 7th day is observed an influence of the doses used; and there was no significant interaction between treatment and days of measurement, showing the similarity of the groups during the experiment.

The variance of the index (R) of aggregation of Clark and Evans

The exact formula for the variance of the Index (R) of aggregation of Clark and Evans is derived. Due to the fact that R is a dimensionless number, its variance is independent of population density, being only a function of the sample size and so can be manipulated. © 1985 Springer-Verlag.

Squeezed states, generalized Hermite polynomials and pseudo-diffusion equation

We show that the wavefunctions 〈pq; λ|n〈, of the harmonic oscillator in the squeezed state representation, have the generalized Hermite polynomials as their natural orthogonal polynomials. These wavefunctions lead to generalized Poisson Distribution Pn(pq;λ), which satisfy an interesting pseudo-diffusion equation: ∂Pnp,q;λ) ∂λ= 1 4 [ ∂2 ∂p2-( 1 λ2) ∂2 ∂q2]P2(p,q;λ), in which the squeeze parameter λ plays the role of time. Th entropies Sn(λ) have minima at the unsqueezed states (λ=1), which means that squeezing or stretching decreases the correlation between momentum p and position q. © 1992.

On non-linear W-infinity symmetry of generalized Liouville and conformal Toda models

Invariance under non-linear Ŵ∞ algebra is shown for the two-boson Liouville type of model and its algebraic generalizations, the extended conformal Toda models. The realization of the corresponding generators in terms of two boson currents within KP hierarchy is presented.

Hamiltonian quantization of the non-anomalous generalized Schwinger model

We quantize a generalized version of the Schwinger model, where the two chiral sectors couples with different strengths to the U(1) gauge field. Starting from a theory which includes a generalized Wess-Zumino term, we obtain the equal time commutation relation for physical fields, both the singular and non-singular cases are considered. The photon propagators are also computed in their gauge dependent and invariant versions. © 1995 Springer-Verlag.

Kinetics of the polarization reversal process in a non-constant applied electric field and the generalized superposition principle

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Non-anomalous generalized chiral Schwinger model

Recently, Basseto and Griguolo1 did a perturbative quantization of what they called a generalized chiral Schwinger model. As a consequence of the kind of quantization adopted, some gauge-dependent masses raised in the model. On the other hand, we discussed the possibility of introducing a generalized Wess-Zumino term,2 where such gauge-dependent masses did appear. Here we intend to show that one can construct a non-anomalous version of a model which include that, presented by Basseto and Griguolo as a particular case, by adding to it a generalized Wess-Zumino term, as proposed in Ref. 2. So we conclude that it is possible to construct a gauge-invariant extension of the model quoted in Ref. 1, and this can be done through a Wess-Zumino term of the type proposed in Ref. 2.

Generalized simulated annealing: Application to silicon clusters

We have compared the recently introduced generalized simulated annealing (GSA) with conventional simulated annealing (CSA). GSA was tested as a tool to obtain the ground-state geometry of molecules. We have used selected silicon clusters (Sin, n=4-7,10) as test cases. Total energies were calculated through tight-binding molecular dynamics. We have found that the replacement of Boltzmann statistics (CSA) by Tsallis's statistics (GSA) has the potential to speed up optimizations with no loss of accuracy. Next, we applied the GSA method to study the ground-state geometry of a 20-atom silicon cluster. We found an original geometry, apparently lower in energy than those previously described in the literature.

A generalized theory of electrical characteristics of schottky barriers for amorphous materials

In the present paper, we discuss a generalized theory of electrical characteristics for amorphous semiconductor (or insulator) Schottky barriers, considering: (i) surface states, (ii) doping impurity states at a single energy level and (iii) energetically distributed bulk impurity states. We also consider a thin oxide layer (≈10 Å) between metal and semiconductor. We develop current versus applied potential characteristics considering the variation of the Fermi level very close to contact inside the semiconductor and decrease in barrier height due to the image force effect as well as potential fall on the oxide layer. Finally, we discuss the importance of each parameter, i.e. surface states, distributed impurity states, doping impurity states, thickness of oxide layer etc. on the log I versus applied potential characteristics. The present theory is also applicable for intimate contact, i.e. metal-semiconductor contact, crystalline material structures or for Schottky barriers in insulators or polymers.