WO3 and ZnO-doped SnO2 ceramics as insulating material

SnO2 ceramics doped with ZnO and WO3 were prepared by mixed oxide method. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation of SnZnWO8 and ZnWO6 at the grain boundaries without strong influence on the densification process. The electrical characterization (log E x log J) shows that the ternary system SnO2-ZnO-WO3 exhibits a very high resistivity of around 10(14) Omega M. Independently of the WO3 concentration, the electrical conductivity of the Sn02-ZnO-WO3 system is always lower than that of the undoped tin dioxide. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Thermodynamic and quality properties of lemon juice powder as affected by maltodextrin and Arabic gum

Sorption isotherms of lemon juice (LE) powders with and without additives-18% maltodextrin (MA) or 18% gum Arabic (GA) were determined at 20-50 degrees C. Addition of additives was shown to affect the isotherms in such a way that, at the same water activity, samples LE + GA and LE + MA presented lower equilibrium moisture content and were not so affected by varying temperature. The net isosteric heats of sorption of juice powders with additives were higher (less negative) than those of lemon juice powders, suggesting that there are more active polar sites in the product without addition of GA or MA. In general, the quality properties decreased with the addition of maltodextrin and gum arabic and it was obtained similar values for LE + GA and LE + MA.

Effects of powder preparation and sintering procedure on microstructure and dielectric properties of PLZT ceramics

PLZT ceramics belong to one of the very important groups of functional materials that make a basis for the production of a large range of electronic devices. The microstructure and properties of ceramics depend on the powder preparation and thermal processing conditions. Various techniques have been used to obtain chemically homogeneous and fine starting powders. PLZT powders have been prepared by two different production routes: by a modified Pechini method, using a polymeric precursor method (PMM) and by a partial oxalate method. A two-step sintering process, including a hot pressing, was carried out at 1100 and 1200degreesC Distinct phases obtained during the sintering process have been investigated by SEM and EDS techniques and dielectric properties such as permittivity and dielectric loss were measured in a frequency range from 1 to 20 kHz.. A significant difference in microstructure and dielectric properties, depending on powder origin and sintering procedure, has been noticed.

BARRIER VOLTAGE DEFORMATION OF ZNO VARISTORS BY CURRENT PULSE

The phenomenon of electrical degradation in ZnO varistors was studied by application of high-intensity current pulses. A wave shape of 8 X 20-mu-s and rectangular waves of 1 and 2 ms were used. The degradation was estimated by reference electric-field variation and by Schottky voltage barrier deformation. The results showed that current pulses reduce both the height and the width of the barrier voltage. It was also observed that the donor density N(d) did not change but the surface states density N(s) decreased with degradation.

SYNTHESIS OF ULTRA-FINE CRYSTALLINE ZRXTI1-XO4 POWDER BY POLYMERIC PRECURSOR METHOD

Reactive ZrxTi1-xO4 (x=0.65, 0.50 and 0.35) powder was prepared by the polymeric precursor method. Studies by X-ray diffraction (XRD), nitrogen adsorption/desorption, and thermogravimetric analysis (TG) showed that powders with high crystallinity (>90%) and high surface areas (>40 m(2)/g) are obtained after calcination at 700 degrees C for 3 h. Infrared spectroscopy and XRD results showed that these titanates nucleate from the amorphous phase with no intermediate phases, at low temperature (450 degrees C).

Visible PL phenomenon at room temperature in disordered structure of SrWO4 powder

The SrWO4 (SWO) powders were synthesized by the polymeric precursor method and annealed at different temperatures. The SWO structure was obtained by X-ray diffraction and the corresponding photoluminescence (PL) spectra was measured. The PL results reveal that the structural order-disorder degree in the SWO lattice influences in the PL emission intensity. Only the structurally order-disordered samples present broad and intense PL band in the visible range. To understand the origin of this phenomenon, we performed quantum-mechanical calculations with crystalline and order-disordered SWO periodic models. Their electronic structures were analyzed in terms of band structure. The appearance of localized levels in the band gap of the order-disordered structure was evidenced and is a favorable condition for the intense PL to occur.

Dependence of La2O3 content on the nonlinear electrical behaviour of ZnO, CoO and Ta2O5 doped SnO2 varistors

The effects of La2O3 on the properties of (Zn, Co, Ta) doped SnO2 varistors were investigated in this study. The samples with different La2O3 concentrations were sintered at 1400 degrees C for 2 h and their properties were characterized by XRD, SEM, I-V and impedance spectroscopy. The grain size was found to decrease from 13 pm to 9 gm with increasing La2O3 content. The addition of rare earth element leads to increase the nonlinear coefficient and the breakdown voltage. The enhancement was expected to arise from the possible segregation of lanthanide ion due to its larger ionic radius to the grain boundaries, thereby modifying its electrical characteristics. Furthermore, the dopants such as La may help in the adsorption of O' to O '' at the grain boundaries characteristics. (c) 2006 Elsevier B.V. All rights reserved.

Effect of In concentration in the starting solution on the structural and electrical properties of ZnO films prepared by the pyrosol process at 450 degrees C

Undoped and indium-doped Zinc oxide (ZnO) solid films were deposited by the pyrosol process at 450 degrees C on glass substrates From solutions where In/Zn ratio was 2, 5, and 10 at.%. Electrical measurements performed at room temperature show that the addition of indium changes the resistance of the films. The resistivities of doped films are less than non-doped ZnO films by one to two orders of magnitude depending on the dopant concentration in the solution. Preferential orientation of the films with the c-axis perpendicular to the substrate was detected by X-ray diffraction and polarized extended X-ray absorption fine structures measurements at the Zn K edge. This orientation depends on the indium concentration in the starting solution. The most textured films were obtained for solutions where In/Zn ratio was 2 and 5 at.%. When In/Zn = 10 at.%, the films had a nearly random orientation of crystallites. Evidence of the incorporation of indium in the ZnO lattice was obtained from extended X-ray absorption fine structures at the In and Zn K edges. The structural analysis of the least resistive film (Zn/In = 5 at.%) shows that In substitutes Zn in the wurtzite structure. (C) 2000 Elsevier B.V. B.V. All rights reserved.

Structural and electrical properties of ZnO varistors containing different spinel phases

Structural and electrical properties of ZnO varistors were investigated as a function of spinel composition. Six varistor mixtures differing only in chemical composition of spinel, were prepared by mixing separately synthesized constituent phases (DSCP method). Compositions of constituent phases in sintered samples were investigated by changes of lattice parameters of the phases, as well as by EDS analysis of the constituent phases. It was found that compositions of ZnO, intergranular and spinel phases were partially changed during sintering due to redistribution of additives, that was controlled by starting spinel composition and its stability. Electrical characterization showed significant difference in electrical properties of investigated varistors: nonlinearity coefficients ranging from 22 to 55 and leakage currents differing by the order of magnitude. Activation energies of conduction were obtained from ac impedance spectroscopy measurements. Calculated values of activation energies were in the range 0.61-1.0 eV confirming difference in defect structure of ZnO grain boundaries in varistors containing different spinel phases. (C) 2001 Elsevier B.V. Ltd and Techna S.r.l. All rights reserved.

Pechini's solution as precursor for Eu(III)-containing ZnO films

The flat-panel-display's (FPD) market and demand for highly efficient and colored luminescent films have been growing quickly. In this work, thin films were obtained from Pechini's solution by dip-coating. The green films were thermally treated at 873 K in order to get ZnO:Eu 1 at% thin film. A Schott(R) glass plate hydrothermally treated was used as substrate. The films have a mosaic shaped feature that was observed by optical microscopy. That feature is a result of substrate thermal treatment. The film deposition decreases the substrate transmittance in the visible range. When the F-7(0) -->L-5(6) (392nm) Eu3+ transition is excited, it is possible to detect emission from D-5(0) --> F-7(J) (J = 1, 2, 3 and 4) transitions. The D-5(0) --> F-7(2) transition is also observed by using ZnO excitation wavelengths indicating energy transfer from ZnO to Eu3+ ion. (C) 2003 Elsevier B.V. (USA). All rights reserved.

Processing and properties of Ag/BSCCO PIT tapes containing different proportions of silver metal powder

Monofilamentary tapes (150 pm thickness) were prepared by swaging and rolling silver tubes containing the Bi:2212 ceramic (granulation below 20 mum) and the silver powder (about 0.8 mum). The study has been made, among other samples, on tapes with nominal proportions of 0, 10 and 20 wt.% of silver. The samples were characterized by SEM, and by electrical measurements under varying applied magnetic field. The measurements of J(c) showed that the addition of 10 wt.% silver powder is very beneficent to this property, doubling the obtained values at 60 K, while the 20 wt.% tape presented very low J(c). The tape with no silver content showed to have a J(c) as high as 2.2 x 10(5) A/cm(2), at 4.2 K, zero applied magnetic field. (C) 2004 Elsevier B.V. All rights reserved.

Sugarcane molasses and yeast powder used in the Fructooligosaccharides production by Aspergillus japonicus-FCL 119T and Aspergillus niger ATCC 20611

Different concentrations of sucrose (3-25% w/v) and peptone (2-5% w/v) were studied in the formulation of media during the cultivation of Aspergillus japonicus-FCL 119T and Aspergillus niger ATCC 20611. Moreover, cane molasses (3.5-17.5% w/v total sugar) and yeast powder (1.5-5% w/v) were used as alternative nutrients for both strains' cultivation. These media were formulated for analysis of cellular growth, P-Fructosyltransferase and Fructooligosaccharides (FOS) production. Transfructosylating activity (U-t) and FOS production were analyzed by HPLC. The highest enzyme production by both the strains was 3% (w/v) sucrose and 3% (w/v) peptone, or 3.5% (w/v) total sugars present in cane molasses and 1.5% (w/v) yeast powder. Cane molasses and yeast powder were as good as sucrose and peptone in the enzyme and FOS (around 60% w/w) production by studied strains.

Sintering of ultrafine undoped SnO2 powder

The sintering process of nanometric undoped SnO2 powder was studied. No macroscopic shrinkage was observed during the sintening process. Grain growth kinetics investigation showed that surface diffusion is the dominant mechanism in the temperature range 500-1300 degreesC. For temperatures higher than 1300 degreesC, high weight loss was measured, suggesting evaporation-condensation as the dominant mass-transport mechanism. Thermogravimetric analysis (TG) and mass spectroscopy studies showed that the surface contamination of the SnO2 particles by chemical species like H2O, OH- and CO2, has a strong influence on the role of mass transport controlled by surface diffusion. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

X-ray powder diffraction analysis of a new palladium(II) amino acid complex

Powder X-ray diffraction data for a new palladium(II) amino acid complex, of composition PdC12H2ON2O4S2, are presented in this paper. Orthorhombic cell parameters are: a = 10.740 angstrom, b = 19.999 angstrom, and c = 5.2470 angstrom. (c) 2004 International Centre for Diffraction Data.

Characterization of ZnO-degraded varistors used in high-tension devices

The effects of the degradation process on the structural, microstructural and electrical properties of ZnO-based varistors were analyzed. Rietveld refinement showed that the BiO2-x phase is affected by the degradation process. Besides the changes in the spinel phase, the degradation process also affects the lattice microstrain in the ZnO phase. Scanning electron microscopy analysis showed electrode-melting failure, while wavelength dispersive X-ray spectroscopy qualitative analysis showed deficiency of oxygen species at the grain boundaries in the degraded samples. Atomic force microscopy using electrostatic mode force illustrated a decrease in the charge density at the grain boundaries of the degraded sample. Transmission electron microscopy showed submicrometric spinel grains embedded in a ZnO matrix, but their average grain size is smaller in the degraded sample than in the standard one. Long pulses appeared to be more harmful for the varistors' properties than short ones, causing higher leakage current values. The electrical characteristics of the degraded sample are partially restored after heat treatment in an oxygen-rich atmosphere. (C) 2006 Elsevier Ltd. All rights reserved.