70 resultados para Vacuum evaporation


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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In this paper we analyse the vacuum polarization effects due to a magnetic flux on massless fermionic fields in a cosmic string background. Three distinct configurations of magnetic fields are considered. In all of them the magnetic fluxes are confined in a long cylindrical tube of finite radius.

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Objective. This work measured the amount of bound versus unbound water in completely-demineralized dentin.Methods. Dentin beams prepared from extracted human teeth were completely demineralized, rinsed and dried to constant mass. They were rehydrated in 41% relative humidity (RH), while gravimetrically measuring their mass increase until the first plateau was reached at 0.064 (vacuum) or 0.116 g H2O/g dry mass (Drierite). The specimens were then exposed to 60% RH until attaining the second plateau at 0.220 (vacuum) or 0.191 g H2O/g dry mass (Drierite), and subsequently exposed to 99% RH until attaining the third plateau at 0.493 (vacuum) or 0.401 g H2O/g dry mass (Drierite).Results. Exposure of the first layer of bound water to 0% RH for 5 min produced a -0.3% loss of bound water; in the second layer of bound water it caused a -3.3% loss of bound water; in the third layer it caused a -6% loss of bound water. Immersion in 100% ethanol or acetone for 5 min produced a 2.8 and 1.9% loss of bound water from the first layer, respectively; it caused a -4 and -7% loss of bound water in the second layer, respectively; and a -17 and -23% loss of bound water in the third layer. Bound water represented 21-25% of total dentin water. Chemical dehydration of water-saturated dentin with ethanol/acetone for 1 min only removed between 25 and 35% of unbound water, respectively.Signcance. Attempts to remove bound water by evaporation were not very successful. Chemical dehydration with 100% acetone was more successful than 100% ethanol especially the third layer of bound water. Since unbound water represents between 75 and 79% of total matrix water, the more such water can be removed, the more resin can be infiltrated. (C) 2014 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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The vacuum energy of QED, as a function of the coupling constant α, is shown to have an absolute minimum at the critical coupling αc=π/3. The effect of chiral symmetry breaking diminishes as the coupling is increased. We argue that these aspects of the vacuum energy shall remain unaltered beyond the ladder approximation.

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This paper studies attained microstructures and reactive mechanisms involved in vacuum infiltration of copper aluminate preforms with liquid aluminium. At high temperatures, under vacuum, the inherent alumina film enveloping the metal is overcome, and aluminium is expected to reduce copper aluminate, rendering alumina and copper. Under this approach, copper aluminate toils as a controlled infiltration path for aluminium, resulting in reactive wetting and infiltration of the preforms. Ceramic preforms containing a mixture of Al2O3 and CuAl2O4 were infiltrated with aluminium under distinct vacuum levels and temperatures, and the resulting reaction and infiltration behaviour is discussed. Copper aluminates stability ranges depend on vacuum level and oxygen partial pressure, which determine both CuAl2O4 and CuAlO2 ability for liquid aluminium infiltration. At 1100 °C and 0.76 atm vacuum level CuAl2O4 is stable, indicating pO2 above 0.11 atm. Reactive infiltration is achieved via reaction between aluminium and CuAl2O4; however, fast formation of an alumina film blocking liquid aluminium wicking results in incipient infiltration. At 1000 °C and 3.8 × 10−7 atm vacuum level, CuAlO2 decomposes to Cu and Al2O3 indicating a pO2 below 6.0 × 10−7 atm; infiltration of the ceramic is hindered by the non-wetting behaviour of the resulting metal alloy. At 1000 °C and 1.9 × 10−6 atm vacuum level CuAlO2 is stable, indicating pO2 above 6.0 × 10−7 atm. Extensive infiltration is achieved via redox reaction between aluminium and CuAlO2, rendering a microstructure characterised by uniform distribution of alumina particles amid an aluminium matrix. This work evidences that liquid aluminium infiltration upon copper aluminate-rich preforms is a feasible route to produce Al–matrix alumina-reinforced composites. The associated reduction reaction renders alumina, as fine particulate composite reinforcements, and copper, which dissolves in liquid aluminium contributing as a matrix strengthener.

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)