69 resultados para Particle in Central Field


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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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South-South Cooperation has become one of the axis of the Brazilian foreign policy, especially when related to Africa. Besides the economic, political and technologic areas, among others, the Brazilian government created a series of cooperation agreements with many African countries in the field of security and defense. This paper analyses the objective and reach of the actions concerning South-South Cooperation between the government of Brazil and the African countries, especially the ones from Atlantic Africa, making use of a bibliography related to the subject and sources derived from the Ministry of External Affairs and the Ministry of Defense.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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This is a study about the relationships between authors and the main thematic categories in the papers published in the last five International ISKO Conferences, held between 2002 and 2010. The aim is to map the domain as ISKO conferences are considered the most representative forum in the field. The published papers are considered to indicate the relationships between authors and themes. The Classification Scheme for Knowledge Organization Error! Bookmark not defined Literature (CSKOL) was used to categorize the papers. The theoretical and methodological foundations of the study can be found in the concept of domain analysis proposed by Hjorland. The analysis of the papers (n=146) led to the identification of the most productive authors, the networks representing the relationships between the authors as also the categories that constitute the primary areas of research.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.