108 resultados para Master Sintering Curve


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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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This paper reviews the influence of particle size distribution, agglomerates, rearrangement, sintering atmospheres and impurities on the pore evolution of some commonly studied oxides. These factors largely affect sintering mechanisms due to modifications of diffusion coefficients or evaporation-condensation. Very broad particle size distribution leads to grain growth and agglomerates densify first. Rearrangement of particles due to neck asymmetry mainly in the early stage of sintering is responsible for a high rate of densification in the first minutes of sintering by collapse of large pores. Sintering atmospheres play an important role in both densification and pore evolution. The chemical interaction of water molecules with several oxides like MgO, ZnO and SnO2 largely affects surface diffusion. As a consequence, there is an increase in the rates of pore growth and densification for MgO and ZnO and in the rate of pore growth for SnO2. Carbon dioxide does not affect the rate of sintering of MgO but greatly affects both rates of pore growth and densification of ZnO. Oxygen concentration in the atmosphere can especially affect semiconductor oxides but significantly affects the rate of pore growth of SnO2. Impurities like chlorine ions increase the rate of pore growth in MgO due to evaporation of HCl and Mg(OH)Cl, increasing the rate of densification and particle cuboidization. CuO promotes densification in SnO2, and is more effective in dry air. The rate of densification decrease and pore widening are promoted in argon. An inert atmosphere favors SnO2 evaporation due to reduction of CuO. © 1990.

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AM1 calculations were performed for the absorption of H2O and CO2 molecules on the surface of model ZnO crystals. The absorption of isolated molecules of each species and the co-absorption of both compounds simultaneously were considered. It was found that the absorption of H2O near a site where CO; is already absorbed favors the process of sintering, in agreement with the experimental findings. This is explained by the formation of Zn(OH)CO3H bound to the surface, a more mobile species than the ZnO unit itself. The roundening of the grains observed in atmospheres containing dry CO2 but suppressed when H2O is present, is also explained by these calculations. After absorption of CO2, the rupture of one bond - so that diffusion of the ZnCO3 species on the surface is allowed - requires much less energy than the breaking of two bonds, necessary for ZnO migration. These facts explain why the speed of surface transport does not decrease in CO2 atmospheres while sintering is indeed slowed down. © 1994.

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The structural evolution during sintering of compacted SnO2 sol-gel powder was investigated using nitrogen adsorption isotherm analysis. Results show that for sintering temperatures up to 400°C the samples have a fractal pore size distribution. As the sintering temperature increases, a structural rearragement occurs, allowing an increase of the efficiency of particle packing and the reduction of fractality. Above 400°C, the pore size growth associated with grain coalescence is the main structural change observed as the sintering temperature increases. © 1995.

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Additions of 0.5 to 2.0 mol% of CoO or MnO2 onto SnO, promote densification of this oxide up to 99% of theoretical density. The temperature of the maximum shrinkage rate (TM) and the relative density in the maximum densification rate (p*) during constant sintering heating rate depend on the dopant concentration. Thus, dopant concentration controls the densifying and nondensifying mechanisms during sintering. The densification of SnO2 witih addition of CoO or MnO, is explained in terms of the creation of oxygen vacancies.

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Ultra-fine NaNbO3 powder was prepared by the use of polymeric precursors. X-ray diffraction (XRD) results showed that this niobate nucleates from the amorphous precursor, with no intermediate phases, at low temperature (500°C). Studies by XRD and nitrogen adsorption/desorption showed that powders with high crystallinity ( ≈ 100%) and high surface areas (>20 m2/g) are obtained after calcination at 700°C for 5 h. Compacts of calcined powders showed high sinterability reaching 98% of theoretical density when sintered at 1190°C for 3 h.

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The crytallite and pore-size evolution during isothermal sintering (400 ≤ T ≤ 700°C) of SnO2 xerogels was studied by X-ray line broadening and nitrogen adsorption-desorption isotherms. The experimental results show a strong anisotropy of crystallite growth between [110] and [101] directions. The preferential growth at [101] is followed by an increase in the mean pore size, reduction of the specific surface area and invariance of total pore volume. This behaviour is typical of grain coalescence sintering. The kinetic analysis of experimental results suggests that the crystallite coalescence at [101] is governed by lattice diffusion. The strong anisotropy of the growth causes pore-size distribution broadening, hindering the macroscopic shrinkage of the compact during sintering. © 1996 Chapman & Hall.

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The microstructural evolution, grain growth and densification for the varistor systems ZnO-Bi2O3 (ZB), ZnO-Bi2O3-Sb2O3 (ZBS), ZnO-Bi2O3-Sb2O3-MnO-Cr 2O3-CoO (ZBSCCM) were studied using constant heating rate sintering, scanning electron microscopy (SEM) and in situ phase formation measurement by high temperature X-ray diffraction (HT-XRD). The results showed that the densifying process is controlled by the formation and decomposition of the Zn2Bi3Sb3O14 pyrochlore (PY) phase for the ZBS and ZBSCCM systems. The addition of transition metals (ZBSCCM system) alters the formation and decomposition reaction temperatures of the pyrochlore phase and the morphology of the Zn7Sb2O12 spinel phase. Thus, the spinel grains act as inclusions and decrease the ZnO grain growth rate. Spinel grain growth kinetics in the ZBSCCM system showed an n value of 2.6, and SEM and HT-XRD results indicate two grain growth mechanisms based on coalescence and Ostwald ripening. © 1996 Chapman & Hall.

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The formation of an ordered (crystalline) phase during isothermal sintering of SnO2 monolithic xerogels, at 200, 250, 300, 400, 500, 600 and 700°C, has been analyzed by the combined use of EXAFS and XRD techniques. For the desiccated gel (110°C), EXAFS results show the formation of small microcrystallites with the incipient cassiterite structure. Between 110 and 250°C, the dehydratation reaction leads to an amorphization evidenced by a decrease of the long and short range crystallographic order. It is due to fissure formation in the xerogel network. For higher temperatures, a continuous coagulation of the crystallites occurs, leading to grain growth. Grain and pore growth obeys the same kinetic relation, so that the microstructure grows by simple enlargement while its morphology is static.

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Tin oxide is an n-type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of a non-isovalent oxide doping The sintering and grain growth of this type of oxide powder is then controlled by atmosphere and by extrinsic oxygen vacancy formation. For pure SnO2 powder the surface state depends only on the interaction of atmosphere molecules with the SnO2 surface. Inert atmosphere like argon or helium promotes oxygen vacancy formation at the surface due to reduction of SnO2 to SnO at the surface and liberation of oxygen molecules forming oxygen vacancies. As consequence surface diffusion is enhanced leading to grain coarsening but no densification. Oxygen atmosphere inhibits the SnO2 reduction decreasing the surface oxygen vacancy concentration. Addition of dopants with lower valence at sintering temperature creates extrinsic charged oxygen vacancies that promote mass transport at grain boundary leading to densification and grain growth of this polycrystalline oxide.

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High purity SnO 2 powder (>99.9%) was compacted in cylindrical pellets and sintered in atmospheres of dry argon, argon with water vapor, oxygen and CO 2 using 10 °C/min up to 1200 °C or isotherms in the range of 1000 to 1200 °C. Time, temperature and sintering atmosphere have large influence on grain growth and low influence on densification of this oxide. Surface diffusion is the dominant mechanism up to 1200 °C and evaporation-condensation is dominant above 1200 °C. The maximum linear shrinkage observed was about 2.0% and attributed to structural rearrangement of particles due to high capillary stresses developed with neighboring particles. © 1999 Trans Tech Publications.

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Sintering of SnO 2 compacts, obtained through slip casting, was studied by means of dilatometry, Hg porosimetry, scanning electron microscopy, and density measurement (Archimedes method). Sintering is strongly influenced by the green microstructure. Moreover, the sintering mechanisms are not dependent on the slurries' solid content up to 50% of solids in volume. Above this value, agglomerates are formed, leading to differential sintering inside and among the agglomerates. Another important point is the reduction of the temperature of maximum shrinkage rate when compared to tin oxide processed by isostatic pressing. This reduction is more accentuated when ammonium hydroxide is added to the suspension. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

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PbMg1/3Nb2/3O3 (PMN) powder was prepared by citrate organic solution, and barium titanate (BT) seed particles were added to encourage the perovskite phase formation. Sintering was followed using the constant heating rate mode of a dilatometer, and it was observed that the seed concentration affected the PMN shrinkage rate and crystal structure. The study of the lattice parameters of the samples after the sintering process indicates that the diffusion of the titanium and of the barium inside perovskite and pyrochlore PMN phases occurs. Moreover, this substitution provoked a decrease of the lattice parameters as showed by the Rietveld refinement.