BARRIER VOLTAGE DEFORMATION OF ZNO VARISTORS BY CURRENT PULSE

The phenomenon of electrical degradation in ZnO varistors was studied by application of high-intensity current pulses. A wave shape of 8 X 20-mu-s and rectangular waves of 1 and 2 ms were used. The degradation was estimated by reference electric-field variation and by Schottky voltage barrier deformation. The results showed that current pulses reduce both the height and the width of the barrier voltage. It was also observed that the donor density N(d) did not change but the surface states density N(s) decreased with degradation.

Effect of combined bending strain and thermal cycling on the voltage-current characteristic curves of Bi-2223 tapes

High critical temperature superconductors are evolving from a scientific research subject into large-scale application devices. In order to meet this development demand they must withstand high current capacity under mechanical loads arising from thermal contraction during cooling from room temperature down to operating temperature (usually 77 K) and due to the electromagnetic forces generated by the current and the induced magnetic field. Among the HTS materials, the Bi2Sr2Ca2Cu3Ox, compound imbedded in an Ag/AgMg sheath has shown the best results in terms of critical current at 77 K and tolerance against mechanical strain. Aiming to evaluate the influence of thermal stress induced by a number of thermal shock cycles we have evaluated the V-I characteristic curves of samples mounted onto semicircular holders with different curvature radius (9.75 to 44.5 mm). The most deformed sample (epsilon = 1.08%) showed the largest reduction of critical current (40%) compared to the undeformed sample and the highest sensitivity to thermal stress (I-c/I-c0 = 0.5). The V-I characteristic curves were also fitted by a potential curve displaying n-exponents varying from 20 down to 10 between the initial and last thermal shock cycle.

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.

A 12 kW three-phase low THD rectifier with high-frequency isolation and regulated DC output

A robust 12 kW rectifier with low THD in the line currents, based on an 18-pulse transformer arrangement with reduced kVA capacities followed by a high-frequency isolation stage is presented in this work. Three full-bridge (buck-based) converters are used to allow galvanic isolation and to balance the dc-link currents, without current sensing or current controller. The topology provides a regulated dc output with a very simple and well-known control strategy and natural three-phase power factor correction. The phase-shift PWM technique, with zero-voltage switching is used for the high-frequency dc-dc stage. Analytical results from Fourier analysis of winding currents and the vector diagram of winding voltages are presented. Experimental results from a 12 kW prototype are shown in the paper to verify the efficiency, robustness and simplicity of the command circuitry to the proposed concept.

SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature

The present review describes mainly the history of SnO2-based voltage-dependent resistors, discusses the main characteristics of these polycrystalline semiconductor systems and includes a direct comparison with traditional ZnO-based voltage-dependent resistor systems to establish the differences and similarities, giving details of the basic physical principles involved with the non-ohmic properties in both polycrystalline systems. As an overview, the text also undertakes the main difficulties involved in processing SnO2- and ZnO-based non-ohmic systems, with an evaluation of the contribution of the dopants to the electronic properties and to the final microstructure and consequently to the system's non-ohmic behavior. However, since there are at least two review texts regarding ZnO-based systems [Levinson, L. M., and Philipp, H. R. Ceramic Bulletin 1985;64:639; Clarke, D. R. Journal of American Ceramic Society 1999;82:485], the main focus of the present text is dedicated to the SnO2-based varistor systems, although the basic physical principles described in the text are universally useful in the context of dense polycrystalline devices. However, the readers must be careful of how the microstructure heterogeneity and grain-boundary chemistry are capable to interfere in the global electrical response for particular systems. New perspectives for applications, commercialization and degradation studies involving SnO2-based polycrystalline non-ohmic systems are also outlined, including recent technological developments. Finally, at the end of this review a brief section is particularly dedicated to the presentation and discussions about others emerging non-ohmic polycrystalline ceramic devices (particularly based on perovskite ceramics) which must be deeply studied in the years to come, specially because some of these systems present combined high dielectric and non-ohmic properties. From both scientific and technological point of view these perovskite systems are quite interesting. (c) 2007 Elsevier Ltd. All rights reserved.

Analysis and design of constant-frequency peak-current-controlled high-power-factor boost rectifier with slope compensation

This paper presents the analysis and the design of a peak-current-controlled high-power-factor boost rectifier, with slope compensation, operating at constant frequency. The input current shaping is achieved, with continuous inductor current mode, with no multiplier to generate a current reference. The resulting overall circuitry is very simple, in comparison with the average-current-controlled boost rectifier. Experimental results are presented, taken from a laboratory prototype rated at 370 W and operating at 67 kHz. The measured power factor was 0.99, with a input current THD equal to 5.6%, for an input voltage THD equal to 2.26%.

On designing linearly-tunable ultra-low voltage CMOS gm-C filters

A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-mode voltage upon tuning, critical for very-low voltage applications, is presented. Its employment to the synthesis of CMOS gm-C high-frequency and voiceband filters is discussed. SPICE data describe the filter characteristics. For a 1.3 V-supply, their nominal passband frequencies are 1.0 MHz and 3.78 KHz, respectively, with tuning rates of 12.52 KHz/mV and 0.16 KHz/m V, input-referred noise spectral density of 1.3 μV/Hz1/2 and 5.0μV/Hz1/2 and standby consumption of 0.87 mW and 11.8 μW. Large-signal distortion given by THD = 1% corresponds to a differential output-swing of 360 mVpp and 480 mVpp, respectively. Common-mode voltage deviation is less than 4 mV over tuning interval.

A high speed 3.3V current mode CMOS comparators with 10-b resolution

This paper presents a high speed current mode CMOS comparator. The comparator was optimized for allows wide range input current 1mA, ±0.5uA resolution and has fast response. This circuit was implemented with 0.8μm CMOS n-well process with area of 120μm × 105μm and operates with 3.3V(±1.65V).

Novel high-power-factor isolated electronic ballast for multiple tubular fluorescent lamps

This paper presents a novel isolated electronic ballast for multiple fluorescent lamps, featuring high power-factor, and high efficiency. Two stages compose this new electronic ballast, namely, a new voltage step-down isolated Sepic rectifier, and a classical resonant Half-Bridge inverter. The new isolated Sepic rectifier is obtained from a Zero-Current-Switching (ZCS) Pulse-Width-Modulated (PWM) soft-commutation cell. The average-current control technique is used in this preregulator stage in order to provide low phase displacement and low Total-Harmonic-Distortion (THD) at input current, resulting in high power-factor, and attending properly IEC 61000-3-2 standards. The resonant Half-Bridge inverter performs Zero-Voltage-Switching (ZVS), providing conditions for the obtaining of overall high efficiency. It is developed a design example for the new isolated electronic ballast rated at 200W output power, 220Vrms input voltage, 115Vdc dc link voltage, with rectifier and inverter stages operating at 50kHz. Finally, experimental results are presented in order to verify the developed analysis. The THD at input current is equal to 5.25%, for an input voltage THD equal to 1.63%, and the measured overall efficiency is about 88.25%, at rated load.

A high efficiency HPF-ZCS-PWM Sepic for electronic ballast with multiple tubular fluorescent lamps

This paper presents a high efficiency Sepic rectifier for an electronic ballast application with multiple fluorescent lamps. The proposed Sepic rectifier is based on a Zero-Current-Switching (ZCS) Pulse-Width-Modulated (PWM) soft-commutation cell. The high power-factor of this structure is obtained using the instantaneous average-current control technique, in order to attend properly IEC61000-3-2 standards. The inverting stage of this new electronic ballast is a classical Zero-Voltage-Switching (ZVS) Half-Bridge inverter. A proper design methodology is developed for this new electronic ballast, and a design example is presented for an application with five fluorescent lamps 40W-T12 (200W output power), 220Vrms input voltage, 130Vdc dc link voltage, with rectifier and inverter stages operating at 50kHz. Experimental results are also presented. The THD at input current is equal to 6.41%, for an input voltage THD equal to 2.14%, and the measured overall efficiency is about 92.8%, at rated load.

An active leakage-injection scheme applied to low-voltage SRAMs

An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective bit-line leakage is injected onto the line during precharge and sensing, preventing the respective capacitances from erroneous discharges. The technique is able to handle leakages up to hundreds of μA at high operating temperatures. Since no additional timing is required, read-out operations are performed at no speed penalty. A simplified 256×1bit array was designed in accordance with a 0.35 CMOS process and 1.2V-supply. A range of PSPICE simulation attests the efficacy of ALIS. With an extra power consumption of 242 μW, a 200 μA-leakage @125°C, corresponding to 13.6 times the cell current, is compensated.

Evaluating the effects of high penetrations of roof-top wind Turbines on secondary distribution circuits

Incentives for using wind power and the increasing price of energy might generate in a relatively short time a scenario where low voltage customers opt to install roof-top wind turbines. This paper focuses on evaluating the effects of such situation in terms of energy consumption, loss reduction, reverse power flow and voltage profiles. Various commercially-available roof-top wind turbines are installed in two secondary distribution circuits considering real-life wind speed data and seasonal load demand. Results are presented and discussed. © 2006 IEEE.

3-D Space Vector PWM implementation for Four-Leg Voltage Source Inverter

The Space Vector PWM implementation and operation for a Four-leg Voltage Source Inverter (VSI) is detailed and discussed in this paper. Although less common, four-leg VSIs are a viable solution for situations where neutral connection is necessary, including Active Power Filter applications. This topology presents advantages regarding the VSI DC link and capacitance, which make it useful for high power devices. Theory, implementation and simulations are also discussed in this paper. © 2011 IEEE.

Nano-displacement measurements of a new piezoelectric flextensional actuator by using a high dynamic range interferometry homodyne method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

A novel single-phase ZCS-PWM high power factor boost rectifier

This paper presents a novel single-phase high power factor PWM boost rectifier, featuring soft commutation of the active switches at zero-current (ZCS). It incorporates the most desirable properties of the conventional PWM and the soft-switching resonant techniques. The input current shaping is achieved with average current mode control, and continuous inductor current mode. This new PWM converter provides ZCS turn-on and turn-off of the active switches, and it is suitable for high power applications employing IGBTs. Principle of operation, theoretical analysis, a design example, and experimental results from a laboratory prototype rated at 1600 W with 400 Vdc output voltage are presented. The measured efficiency and power factor were 96.2% and 0.99 respectively, with an input current THD equal to 3.94%, for an input voltage THD equal to 3.8%, at rated load.