70 resultados para Chemical-Vapor-Deposition


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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Thin films of Ga1-xMnxN have great interest in its potential for control of electron spin (spintronics), in most cases this material is synthesized by techniques that have a high degree of control the deposition parameters, such as molecular beam epitaxy (MBE) and deposition of metalorganic chemical vapor deposition (MOCVD). The sputtering technique is an alternative route to produce such materials. Here we study the film deposition Ga1-xMnxN by reactive sputtering technique and apply enhancements such as a glove box, a residual gas analyzer and temperature control system, in order to growth films epitaxially using an analysis of the preconditions of films analyzed by spectroscopic techniques and microscopic. These procedures helped to improve the technique of deposition by cleaning substrates in an inert environment, and by the analysis of trace gases and heating the substrate holder as explained in the literature. Through the applications and comparisons it can be pointed out that the technique has the advantage of its simplicity and relatively low cost compared to MBE and MOCVD, but produces polycrystalline material

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Backgroud: The influence of diamond-like-carbon (DLC) films on bacterial leakage through the interface between abutments and dental implants of external hexagon (EH) and internal hexagon (IH) was evaluated. Film deposition was performed by PECVD (Plasma Enhanced Chemical Vapor Deposition). Sets of implants and abutments (N=180, n=30) were divided according to the connection design and the treatment of the abutment base: (1) no treatment (control); (2) DLC film deposition, and (3) Ag-DLC film deposition. Under sterile conditions, 1 µL of Enterococcus faecalis was inoculated inside the implants, and abutments were tightened. The sets were tested for immediate external contamination, suspended in test tubes containing sterile culture broth, and followed-up for five days. Turbidity of the broth indicated bacterial leakage. At the end of the period, the abutments were removed and the internal content of the implants was collected with paper points and plated in Petri dishes. They were incubated for 24 h for bacterial viability assessment and colony-forming unit (CFU) counting. Bacterial leakage was analyzed by Chi-square and Fisher exact tests (α=5%). The percentage of bacterial leakage was 16.09% for EH implants and 80.71% for IH implants (P<0.0001). The bacterial load was higher inside these implants (P=0.000). The type of implant significantly influenced the results (P=0.000), whereas the films did not (P=0.487). We concluded that: (1) IH implants showed a higher frequency of bacterial leakage and (2) the DLC and Ag-DLC films did not significantly reduce the frequency of bacterial leakage and bacteria load inside the implants.

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The purpose of this work is the deposition of films in order to increase the corrosion resistance of AISI 304 steel, which is a material used to construct the reactors for bioethanol production. This deposition inhibits the permeation of corrosive species to the film-metal interface. Thin films were prepared by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method using plasmas of hexamethyldisiloxane/argon/oxygen mixtures excited by signals of different powers. The plasma was generated by the application of RF power of 13.56 MHz to the sample holder while keeping grounded the topmost electrode and the chamber walls. The effect of the RF power on the properties of the samples was investigated by perfilometry, X-ray photoelectron spectroscopy (XPS), contact angle, and electrochemical impedance spectroscopy (EIS). The results of the corrosion resistance tests of the AISI 304 steel were interpreted in terms of the energy delivered to the growing layer by plasma excitation power.