Electrical Properties of Textured Niobium-Doped Bismuth Titanate Ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Active planar waveguides based on sol-gel Er3+-doped SiO2-ZrO2 for photonic applications: Morphological, structural and optical properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Isochronal sintering of the blended elemental Ti-35Nb alloy

Titanium alloy parts are ideally suited for advanced aerospace systems and surgical implants because of their unique combination of high specific strength at both room temperature and moderately elevated temperature, in addition to excellent corrosion resistance. In this work, results of the Ti-35Nb alloy sintering are presented. This alloy, due to its lower modulus of elasticity and high biocompatibility, is a promising candidate for surgical and aerospace applications. Samples were produced by mixing of initial metallic hydride powders followed by uniaxial and cold isostatic pressing with subsequent densification by isochronal sintering between 700 and 1500 degrees C, in vacuum. Sintering behavior was studied by means of microscopy and density. Sintered samples were characterized for phase composition, microstructure and microbardness by X-ray diffraction, scanning electron microscopy and Vickers indentation, respectively. Samples sintered at high temperatures display a fine plate-like a structure and intergranular P. A few remaining pores are still found, and density above 97% for specimens sintered at 1500 degrees C is reached. (c) 2007 Elsevier B.V. All rights reserved.

Structural and Spectroscopic Properties of Luminescent Er3+-Doped SiO2-Ta2O5 Nanocomposites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Pore size evolution during sintering of ceramic oxides

This paper reviews the influence of particle size distribution, agglomerates, rearrangement, sintering atmospheres and impurities on the pore evolution of some commonly studied oxides. These factors largely affect sintering mechanisms due to modifications of diffusion coefficients or evaporation-condensation. Very broad particle size distribution leads to grain growth and agglomerates densify first. Rearrangement of particles due to neck asymmetry mainly in the early stage of sintering is responsible for a high rate of densification in the first minutes of sintering by collapse of large pores. Sintering atmospheres play an important role in both densification and pore evolution. The chemical interaction of water molecules with several oxides like MgO, ZnO and SnO2 largely affects surface diffusion. As a consequence, there is an increase in the rates of pore growth and densification for MgO and ZnO and in the rate of pore growth for SnO2. Carbon dioxide does not affect the rate of sintering of MgO but greatly affects both rates of pore growth and densification of ZnO. Oxygen concentration in the atmosphere can especially affect semiconductor oxides but significantly affects the rate of pore growth of SnO2. Impurities like chlorine ions increase the rate of pore growth in MgO due to evaporation of HCl and Mg(OH)Cl, increasing the rate of densification and particle cuboidization. CuO promotes densification in SnO2, and is more effective in dry air. The rate of densification decrease and pore widening are promoted in argon. An inert atmosphere favors SnO2 evaporation due to reduction of CuO. © 1990.

Effect of cobalt(II) oxide and manganese(IV) oxide on sintering of tin(IV) oxide

Additions of 0.5 to 2.0 mol% of CoO or MnO2 onto SnO, promote densification of this oxide up to 99% of theoretical density. The temperature of the maximum shrinkage rate (TM) and the relative density in the maximum densification rate (p*) during constant sintering heating rate depend on the dopant concentration. Thus, dopant concentration controls the densifying and nondensifying mechanisms during sintering. The densification of SnO2 witih addition of CoO or MnO, is explained in terms of the creation of oxygen vacancies.

Microstructural development of ZnO varistor during reactive liquid phase sintering

The microstructural evolution, grain growth and densification for the varistor systems ZnO-Bi2O3 (ZB), ZnO-Bi2O3-Sb2O3 (ZBS), ZnO-Bi2O3-Sb2O3-MnO-Cr 2O3-CoO (ZBSCCM) were studied using constant heating rate sintering, scanning electron microscopy (SEM) and in situ phase formation measurement by high temperature X-ray diffraction (HT-XRD). The results showed that the densifying process is controlled by the formation and decomposition of the Zn2Bi3Sb3O14 pyrochlore (PY) phase for the ZBS and ZBSCCM systems. The addition of transition metals (ZBSCCM system) alters the formation and decomposition reaction temperatures of the pyrochlore phase and the morphology of the Zn7Sb2O12 spinel phase. Thus, the spinel grains act as inclusions and decrease the ZnO grain growth rate. Spinel grain growth kinetics in the ZBSCCM system showed an n value of 2.6, and SEM and HT-XRD results indicate two grain growth mechanisms based on coalescence and Ostwald ripening. © 1996 Chapman & Hall.

Particle growth during calcination of polycation oxides synthesized by the polymeric precursors method

The particle-growth kinetics of sodium niobate and zirconium titanate powders that were processed by the polymeric precursors method were studied. The growth kinetics that were studied for the particle, in the final stage of crystallization, showed that the growth process occurs in two different stages. For temperatures <800°C, the particle-growth mechanism is associated with surface diffusion, with an activation energy in the range of 40-80 KJ/mol. For temprratures >800°C, particle growth is controlled by densification of the nanometric particle cluster and by a neck-size-controlled particle-growth mechanism. The results suggest that this behavior was typical of the synthesis method, because two different polycation oxides presented the same behavior.

Effect of atmosphere and dopants on sintering of SnO2

Tin oxide is an n-type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of a non-isovalent oxide doping The sintering and grain growth of this type of oxide powder is then controlled by atmosphere and by extrinsic oxygen vacancy formation. For pure SnO2 powder the surface state depends only on the interaction of atmosphere molecules with the SnO2 surface. Inert atmosphere like argon or helium promotes oxygen vacancy formation at the surface due to reduction of SnO2 to SnO at the surface and liberation of oxygen molecules forming oxygen vacancies. As consequence surface diffusion is enhanced leading to grain coarsening but no densification. Oxygen atmosphere inhibits the SnO2 reduction decreasing the surface oxygen vacancy concentration. Addition of dopants with lower valence at sintering temperature creates extrinsic charged oxygen vacancies that promote mass transport at grain boundary leading to densification and grain growth of this polycrystalline oxide.

Effect of atmosphere on the sintering and grain growth of tin oxide

High purity SnO 2 powder (>99.9%) was compacted in cylindrical pellets and sintered in atmospheres of dry argon, argon with water vapor, oxygen and CO 2 using 10 °C/min up to 1200 °C or isotherms in the range of 1000 to 1200 °C. Time, temperature and sintering atmosphere have large influence on grain growth and low influence on densification of this oxide. Surface diffusion is the dominant mechanism up to 1200 °C and evaporation-condensation is dominant above 1200 °C. The maximum linear shrinkage observed was about 2.0% and attributed to structural rearrangement of particles due to high capillary stresses developed with neighboring particles. © 1999 Trans Tech Publications.

Effect of atmosphere and dopants on sintering of SnO2

Tin oxide is an n type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of aliovalent oxide doping. The sintering and grain growth of this type of oxide powder is then controlled by atmosphere and by extrinsic oxygen vacancy formation. For pure SnO2 powder the surface state depends only on the interaction of atmosphere molecules with the SnO2 surface. Inert atmosphere like argon or helium promotes oxygen vacancy formation at the surface due to reduction of SnO2 to SnO at the surface and liberation of oxygen molecules forming oxygen vacancies. As a consequence surface diffusion is enhanced leading to grain coarsening but no densification. Oxygen atmosphere inhibits SnO2 reduction by decreasing the surface oxygen vacancy concentration. Addition of dopants with lower valence at the sintering temperature creates extrinsic charged oxygen vacancies that promote mass transport at the grain boundary leading to densification and grain growth of this polycrystalline oxide.

Specific depth cone resistivity measurements to determine soil engineering properties

The University of British Columbia (UBC) began performing piezocone penetration tests (CPTU) with electrical resistivity measurements (RCPTU) in 1989. Since then, RCPTU research at UBC has focused on obtaining geo-environmental parameters such as fluid resistivity and soil engineering properties such as porosity and degree of saturation from measurements of bulk soil electrical resistivity using the empirical relationship proposed by Archie (1942). Within this framework, the paper illustrates and discusses important design and calibration issues for resistivity modules such as the use of isolated circuitry to achieve linear calibrations over large ranges of resistivity. The suitability of RCPTU measurements for determination of geo-environmental and geotechnical parameters are assessed using typical ranges of soil and groundwater properties and methods of isolating individual factors for study are discussed. Illustrative examples of RCPTU research efforts including the environmental characterization of mine tailings, delineation of saline water intrusions in fresh water aquifers and the quality control of geotechnical ground densification are presented throughout the text. It is shown that groundwater temperature and hence ion mobility is not significantly altered by frictional heat generated during piezocone penetration and that ratio-based approaches to monitoring soil porosity can be used to eliminate the requirement for extensive groundwater sampling programs. Lastly, it is shown that RCPTU measurements above the water table can only be made using resistivity modules that are stable over a large range of resistivities and that such measurements are the most difficult to interpret because of grain surface conduction effects and generally unknown fluid resistivities.

Sintering and mass transport features of (Sn,Ti)O2 polycrystalline ceramics

Different (Sn,Ti)O2 compositions were sintered at 1450 °C for 2 h with the purpose of investigating their sintering and mass transport properties. Highly dense ceramics were obtained and their structural properties studied by X-ray diffraction and scanning electron microscopy. The changes in lattice parameters were analyzed by the Rietveld method and two mass transport mechanisms were observed during sintering in different temperature ranges, evidenced by the linear shrinkage rate as a function of temperature. The effect of the concentration of TiO2 on mass transport and densiffication during sintering was analyzed by considering the intrinsic defects. System densiffication was attributed to a mass transport mechanism in the SnO2 matrix, caused by the presence of TiO2, which formed a solid solution phase. The change in the mass transport mechanism was attributed to chemical bonding between SnO2 and TiO2, which improves ionic difusion as the concentration of TiO2 increased in (Sn,Ti)O2 compositions. © 2002 Elsevier Science Ltd. All rights reserved.

Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Erbium-activated HfO2-based waveguides for photonics

70SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.