Técnica do Grupo de Renormalização Numérico (GRN) aplicada em quantum dots

Pós-graduação em Física - IGCE

Chlorophyll a fluorescence in Annona emarginata (Schltdl.) H. Rainer plants subjected to water stress and after rehydration

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Capacitive DNA detection driven by electronic charge fluctuations in a graphene nanopore

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Chlorophyll fluorescence in guanandi tree (calophyllum brasiliense) after herbicide application

Chlorophyll fluorescence is currently used as a rapid diagnostic and nondestructive method to detect and quantify damage on the photosynthetic apparatus of leaves on weeds, crops and ornamental/coniferous trees in response to both environmental stress and herbicides. This study aimed to evaluate chlorophyll fluorescence in guanandi plants (Calophyllum brasiliense) after application of different postemergence herbicides. The experiment was performed in a completely randomized design, with six treatments (control, bentazon, sulfentrazone, isoxaflutole, atrazine and glyphosate) and five replications. The herbicide treatments were applied with a stationary sprayer, and electron transport rate (ETR) was subsequently analyzed with OS5p Multi-Mode Chlorophyll Fluorometer. In the monitored period, guanandi plants subjected to atrazine showed higher sensitivity to chlorophyll fluorescence than the other treatments. Although bentazon is a photosystem II inhibitor, it showed no major changes in electron transport for the studied species and in the monitored period. In summary, ETR is a good parameter to evaluate the effect of some herbicides on Calophyllum brasiliense plants.

Future e(+)e(-) colliders' sensitivity to Hb(b)over-bar coupling and CP violation

A complete analysis of the sensitivity to new Hbb̄ couplings from the process e+e- → bb̄vv̄ at the next generation of linear colliders was performed. These new couplings were predicted by many extensions of the Standard Model. The results are comparable to the study performed previously where a global fit analysis for L=500 fb-1 and √s=500 GeV resulted in a relative accuracy of 2.2% in the gHbb Yukawa coupling.

Alocação diferencial do 13C em Copaifera langsdorffii Desf. (Fabaceae - Caesalpinoideae) sob deficiência hídrica

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Selenium and sulfur: mitigation in plant stresses

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of ion concentration of ionomer in electron injection layer of polymer light-emitting devices

Polymer light-emitting devices (PLEDs) with poly(2-methoxy-5-hexyloxy)-p-phenylenevinylene (OC1OC6-PPV) as the emissive layer were studied with an electron injection layer of ionomers consisting of copolymers of styrene and methylmethacrylate (PS/PMMA) with 3, 6 and 8 mol% degree of sulfonation. The ionomers were able to form very thin films over the emissive layer, with less than 30 nm. Additionally, the presence of ion pairs of ionomer suppresses the tendency toward dewetting of the thin film of ionomer (similar to 10 nm) which can cause malfunction of the device. The effect of the ionomers was investigated as a function of the ion content. The devices performance, characterized by their current density and luminance intensity versus voltage, showed a remarkable increase with the ionomer layer up to 6 mol% of ionic groups, decreasing after that for the 8 mol% ionomer device. The study of the impedance spectroscopy in the frequency range from 0.1 to 10(6) Hz showed that the injection phenomena dominate over the transport in the electroluminescent polymer bulk. (c) 2006 Elsevier B.V. All rights reserved.

Mechanism of charge transport in castor oil-based polyurethane/carbon black composite (PU/CB)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Universal zero-bias conductance for the single-electron transistor

The thermal dependence of the zero-bias conductance for the single electron transistor is the target of two independent renormalization-group approaches, both based on the spin-degenerate Anderson impurity model. The first approach, an analytical derivation, maps the Kondo-regime conductance onto the universal conductance function for the particle-hole symmetric model. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. The second approach, a numerical renormalization-group computation of the conductance as a function the temperature and applied gate voltages offers a comprehensive view of zero-bias charge transport through the device. The first approach is exact in the Kondo regime; the second, essentially exact throughout the parametric space of the model. For illustrative purposes, conductance curves resulting from the two approaches are compared.

Microstructural and transport properties of LaNiO3-delta films grown on Si(111) by chemical solution deposition

Electrically conductive LaNiO3-delta (LNO) thin films with typical thickness of 200 nm were deposited on Si (111) substrates by a chemical solution deposition method and heat-treated in air at 700 degreesC. Structural, morphological, and electrical properties of the LNO thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field-emission scanning electron microscopy (FEG-SEM), and electrical resistivity rho(T). The thin films have a very flat surface and no droplet was found on their surfaces. The average grain size observed by AFM and FEG-SEM was approximately 100 nm in excellent agreement with XRD data. The rho(T) data showed that these thin films display a good metallic character in a large range of temperature. These results suggest the use of this conductive layer as electrode in the integration of microelectronic devices. (C) 2003 Elsevier B.V. All rights reserved.

Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

The evaluation of free carrier concentration based on Drude's theory can be performed by the use of optical transmittance in the range 800-2000 nm (near infrared) for Sb-doped SnO2 thin films. In this article, we estimate the free carrier concentration for these films, which are deposited via sol-gel dip-coating. At approximately 900 mn, there is a separation among transmittance curves of doped and undoped samples. The plasma resonance phenomena approach leads to free carrier concentration of about 5 x 1020 cm(-3). The increase in the Sb concentration increases the film conductivity; however, the magnitude of measured resistivity is still very high. The only way to combine such a high free carrier concentration with a rather low conductivity is to have a very low mobility. It becomes possible when the crystallite dimensions are taken into account. We obtain grains with 5 nm of average size by estimating the grain size from X-ray diffraction data, and by using line broadening in the diffraction pattern. The low conductivity is due to very intense scattering at the grain boundary, which is created by the presence of a large amount of nanoscopic crystallites. Such a result is in accordance with X-ray photoemission spectroscopy data that pointed to Sb incorporation proportional to the free electron concentration, evaluated according to Drude's model. (c) 2006 Elsevier Ltd. All rights reserved.

Temperature dependence of electron properties of Sn doped In2O3 nanobelts

This paper reports on the measurements of transport properties of high crystalline quality Sn doped In2O3 nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current-voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices' construction. (C) 2007 Elsevier B.V. All rights reserved.

Transient current effects on poly(o-methoxyaniline) films irradiated by pulsed electron beam

Fast transient current decay was recorded on POMA samples during current pulses (in the order of milliseconds) provided by a low energy electron beam under an applied field. The characteristic time decay depends on the electron beam energy and on the bias polarity. The results were explained taking into account the effect of space charge, the intrinsic conductivity of the non-irradiated region of the sample and the radiation-induced conductivity of the thin irradiated region. Fitting parameters may provide the value of both intrinsic and radiation-induced conductivities and the average electron range.