Free electromagnetic field in Riemannian space-time via DKP theory

We study the massless Duffin-Kemmer-Petiau (DKP) equation in Riemannian space-times, particularly the massless spin 1 sector which reproduces the free Maxwell's equations.

The kaon electromagnetic form factor in the light-front formalism

Numerical calculations are performed and compared to the experimental data for the electromagnetic form factor of the kaon, extracted from both components of the electromagnetic current, J(+) and J(-), with a pseudo-scalar coupling of the quarks to the kaon. In the case of J(+), there is no pair term contribution in the Drell-Yan frame (q(+) = 0). However, for J-, the pair term contribution is different from zero and is necessary in order to preserve the rotational symmetry of the current. The free parameters are the quark masses and the regulator mass.

Kaon and Pion Electromagnetic Form Factor Ratios in the Light-Front

We have applied the light-front formalism to calculate the electromagnetic form factors for the pion and the kaon from two models at low and high energies in order to explore the differences between such models. We have also compared the results for the ratio F(K)(Q(2))/F(pi)(Q(2)) with the experimental data, up to 10 [GeV/c](2) and we have observed that the theoretical results are in good concordance for low energies, but they are very different at higher energy scales.

Low-frequency absorption cross section of the electromagnetic waves for extreme Reissner-Nordstrom black holes in higher dimensions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Frame dependence of the pair contribution to the pion electromagnetic form factor in a light-front approach

The frame dependence of the pair-term contribution to the electromagnetic form factor of the pion is studied within the Light Front approach. A symmetric ansatz for the pion Bethe-Salpeter amplitude with a pseudo scalar coupling of the constituent to the pion field is used. In this model, the pair term vanishes for the Drell-Yan condition, while it is dominant for momentum transfer along the light-front direction.

Electromagnetic field in Lyra manifold: a first order approach

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Interpolating EFGM for computing continuous and discontinuous electromagnetic fields

Purpose - This paper proposes an interpolating approach of the element-free Galerkin method (EFGM) coupled with a modified truncation scheme for solving Poisson's boundary value problems in domains involving material non-homogeneities. The suitability and efficiency of the proposed implementation are evaluated for a given set of test cases of electrostatic field in domains involving different material interfaces.Design/methodology/approach - the authors combined an interpolating approximation with a modified domain truncation scheme, which avoids additional techniques for enforcing the Dirichlet boundary conditions and for dealing with material interfaces usually employed in meshfree formulations.Findings - the local electric potential and field distributions were correctly described as well as the global quantities like the total potency and resistance. Since, the treatment of the material interfaces becomes practically the same for both the finite element method (FEM) and the proposed EFGM, FEM-oriented programs can, thus, be easily extended to provide EFGM approximations.Research limitations/implications - the robustness of the proposed formulation became evident from the error analyses of the local and global variables, including in the case of high-material discontinuity.Practical implications - the proposed approach has shown to be as robust as linear FEM. Thus, it becomes an attractive alternative, also because it avoids the use of additional techniques to deal with boundary/interface conditions commonly employed in meshfree formulations.Originality/value - This paper reintroduces the domain truncation in the EFGM context, but by using a set of interpolating shape functions the authors avoided the use of Lagrange multipliers as well Mathematics in Engineering high-material discontinuity.

High Verdet constant Ga : S : La : O chalcogenide glasses for magneto-optical devices

The magneto-optical rotation at room temperature was measured for three Ga:S:La:O chalcogenide glasses at several laser lines in the visible. The first sample was a binary system constituted by 70 mol % Ga2S3 and 30 mol % La2O3, whereas in the second and third ones the lanthanum oxide was partially substituted by lanthanum sulfide, keeping the amount of gallium sulfide fixed. A pulsed magnetic field between 50 and 80 kG was used for the Faraday rotation measurements. The Verdet constant for one of the ternary samples was found to be as high as 0.205 min G(-1) cm(-1) at 543 nm, indicating that these chalcogenide glasses are very promising for magneto-optical applications. The data for each sample were fitted using the expected analytical expression for the magneto-optical dispersion. Measurements of the refractive index of the glasses at 632.8 nm are also reported. Data on the magneto-optical properties of two high Verdet constant, heavy-metal oxide diamagnetic glasses are also included for comparison. (C) 1999 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(99)00102-6].

Neutrinos and electromagnetic gauge invariance

We examine a recently proposed connection constraining U(1)(em) electromagnetic gauge invariance and the nature of neutrino mass terms in the framework of G(0) = SU(3)(C) x G(W) x U(1)(N) gauge extensions of the standard model where G(W) denotes the weak isospin special unitary extended groups. We show that in a large class of G(0) models there is a unique fermion representation content and scalar fields which select the neutrino mass terms. Noteworthy. even though there are mathematically equivalent representation contents then can be different aspects concerning the physical consequences which are not a mere truism.

Effect of combined bending strain and thermal cycling on the voltage-current characteristic curves of Bi-2223 tapes

High critical temperature superconductors are evolving from a scientific research subject into large-scale application devices. In order to meet this development demand they must withstand high current capacity under mechanical loads arising from thermal contraction during cooling from room temperature down to operating temperature (usually 77 K) and due to the electromagnetic forces generated by the current and the induced magnetic field. Among the HTS materials, the Bi2Sr2Ca2Cu3Ox, compound imbedded in an Ag/AgMg sheath has shown the best results in terms of critical current at 77 K and tolerance against mechanical strain. Aiming to evaluate the influence of thermal stress induced by a number of thermal shock cycles we have evaluated the V-I characteristic curves of samples mounted onto semicircular holders with different curvature radius (9.75 to 44.5 mm). The most deformed sample (epsilon = 1.08%) showed the largest reduction of critical current (40%) compared to the undeformed sample and the highest sensitivity to thermal stress (I-c/I-c0 = 0.5). The V-I characteristic curves were also fitted by a potential curve displaying n-exponents varying from 20 down to 10 between the initial and last thermal shock cycle.

Characterization of ZnO-degraded varistors used in high-tension devices

The effects of the degradation process on the structural, microstructural and electrical properties of ZnO-based varistors were analyzed. Rietveld refinement showed that the BiO2-x phase is affected by the degradation process. Besides the changes in the spinel phase, the degradation process also affects the lattice microstrain in the ZnO phase. Scanning electron microscopy analysis showed electrode-melting failure, while wavelength dispersive X-ray spectroscopy qualitative analysis showed deficiency of oxygen species at the grain boundaries in the degraded samples. Atomic force microscopy using electrostatic mode force illustrated a decrease in the charge density at the grain boundaries of the degraded sample. Transmission electron microscopy showed submicrometric spinel grains embedded in a ZnO matrix, but their average grain size is smaller in the degraded sample than in the standard one. Long pulses appeared to be more harmful for the varistors' properties than short ones, causing higher leakage current values. The electrical characteristics of the degraded sample are partially restored after heat treatment in an oxygen-rich atmosphere. (C) 2006 Elsevier Ltd. All rights reserved.

A multi-cell variable frequency interleaved ZCS boost rectifier digitally controlled by FPGA

This paper presents a multi-cell single-phase high power factor boost rectifier in interleave connection, operating in critical conduction mode, employing a soft-switching technique, and controlled by Field Programmable Gate Array (FPGA). The soft-switching technique is based on zero-current-switching (ZCS) cells, providing ZC (zero-current) turn-on and ZCZV (zero-current-zero-voltage) turn-off for the active switches, and ZV (zero-vohage) turn-on and ZC (zero-current) turn-off for the boost diodes. The disadvantages related to reverse recovery effects of boost diodes operated in continuous conduction mode (additional losses, and electromagnetic interference (EMI) problems) are minimized, due to the operation in critical conduction mode. In addition, due to the interleaving technique, the rectifier's features include the reduction in the input current ripple, the reduction in the output voltage ripple, the use of low stress devices, low volume for the EMI input filter, high input power factor (PF), and low total harmonic distortion (THD) in the input current, in compliance with the IEC61000-3-2 standards. The digital controller has been developed using a hardware description language (VHDL) and implemented using a XC2S200E-SpartanII-E/Xilinx FPGA device, performing a true critical conduction operation mode for all interleaved cells, and a closed-loop to provide the output voltage regulation, like as a preregulator rectifier. Experimental results are presented for a implemented prototype with two and with four interleaved cells, 400V nominal output voltage and 220V(rms) nominal input voltage, in order to verify the feasibility and performance of the proposed digital control through the use of a FPGA device.

Manifest electromagnetic duality in closed superstring field theory

The free action for massless Ramond-Ramond fields is derived from closed superstring field theory using the techniques of Siegel and Zwiebach. For the uncompactified Type IIB superstring, this gives a manifestly Lorentz-covariant action for a self-dual five-form field strength. Upon compactification to four dimensions, the action depends on a U(1) field strength from 4D N = 2 supergravity. However, unlike the standard Maxwell action, this action is manifestly invariant under the electromagnetic duality transformation which rotates F-mn into epsilon(mnpq)F(pq).

Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance > 85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO2). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage. (C) 2007 Elsevier B.V. All rights reserved.