Self-assembled FePt nanocrystals with large coercivity: Reduction of the fcc-to-L1(0) ordering temperature

Herein we report the synthesis and properties of Fe55Pt45 nanoparticles, both monodisperse and self-assembled into hexagonal close-packed and cubic arrays of 4.0 +/- 0.2 nm size in an L1(0) structure, obtained by a modified polyol process. The new synthetic route improved the control over the particle composition, thereby reducing the temperature required to convert from face-centered cubic (fcc) to face-centered tetragonal (fct) phase by some 30-50 degrees C without additives. Annealing at 550 degrees C for 30 min converts the self-assembled nanoparticles into ferromagnetic nanocrystals with large coercivity, H-C = 11.1 kOe. Reducing the fcc-to-fct (L1(0)) ordering temperature avoided particle coalescence and decreased the loss in particle positional order without compromising the magnetic properties, as is generally observed when additives are used.

Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films

The evolution of As excess in As-rich Ga1-xAsx films is analyzed for distinct As concentrations and different annealing temperatures. Initially the samples are amorphous and crystallize partially after thermal annealing. The formation of both amorphous and crystalline As clusters is examined by micro-Raman and X-ray diffraction analysis. When highly and moderately unbalanced materials are compared, differences are clearly observed concerning the crystallization temperature and the migration kinetics of the As excess. These differences are explained by the fort-nation of As precipitates around the GaAs crystallites in the moderately unbalanced material, contrasting with the migration of the As excess to the film surface in the highly unbalanced material.

Temperature dependence on the electrical properties of Ba(Ti0.90Zr0.10)O-3:2V ceramics

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Disorder-dependent photoluminescence in Ba0.8Ca0.2TiO3 at room temperature

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Intense and broad photoluminescence at room temperature in structurally disordered Ba[Zr0.25Ti0.75]O-3 powders: An experimental/theoretical correlation

Intense and broad photoluminescence (PL) emission at room temperature was observed on structurally disordered Ba[Zr0.25Ti0.75]O-3 (BZT) powders synthesized by the polymeric precursor method. BZT powders were annealed at 573 K for different times and at 973 K for 2 h in oxygen atmosphere. The single-phase cubic perovskite structure of the powder annealed at 973 K for 2 It was identified by X-ray diffraction and Fourier transform Raman techniques. PL emission increased with the increase of annealing time, which reached its maximum value in the powder annealed at 573 K for 192 h. First principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and disordered models. The theoretical calculations and experimental measurements of Ultraviolet-visible absorption spectroscopy indicate that the presence of intermediary energy levels in the band gap is favorable for the intense and broad PL emission at room temperature in disordered BZT powders. The PL behavior is probably due the existence of a charge gradient on the disordered structure, denoted by means of a charge transfer process from [TiO5]-[ZrO6] or [TiO6]-[ZrO5] clusters to [TiO6]-[ZrO6] clusters. (C) 2008 Elsevier Ltd. All rights reserved.

The thermal stability of fission tracks in the 612 nist glass standard at room temperature

Two wafers of the NIST (formerly NBS) glass standard SRM 612 recently irradiated have been compared to the pre-irradiated wafers RT3 and RT4 of glass SRM 962-7, stored for 9 years at 5°C, and SRM 962, stored for 20 years at room temperature. Track area densities on internal surfaces of the glass as well as track size measurements suggest that (1) the old SRM 962 and the more recent SRM 962a calibrations are consistent and (2) annealing of the fission tracks in the pre-irradiated wafers is negligible. This last experimental result enables a direct comparison of contemporary and previous fission track age calibrations. © 1995.

Estudo do annealing de traços de fissão em epídoto

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Obtenção de um ataque químico padrão, zona de annealing parcial e temperatura de fechamento para o epídoto através do método dos traços de fissão

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)