Design of a CMOS voltage reference using current-model approach

A voltage reference with low sensibility to temperature and power-supply that can generate flexible reference values (from milivolts to several volts) is proposed. Designed for AMS 0.35μm CMOS process, the circuit provides a stable output voltage working in the temperature range of -40-150°C. The proposed reference provides a nominal output voltage of 1.358V with a power-supply of 3.3V. © 2011 IEEE.

Effect of chemical modifications on the electronic structure of poly(3-hexylthiophene)

The widespread use of poly(3-hexylthiophene) (P3HT) in the active layers of organic solar cells indicates that it possesses chemical stability and solubility suitable for such an application. However, it would be desirable to have a material that can maintain these properties but with a smaller bandgap, which would lead to more efficient energy harvesting of the solar spectrum. Fifteen P3HT derivatives were studied using the Density Functional Theory. The conclusion is that it is possible to obtain compounds with significantly smaller bandgaps and with solubility and stability similar to that of P3HT, mostly through the binding of oxygen atoms or conjugated organic groups to the thiophenic ring. © 2013 Wiley Periodicals, Inc.

Strain- and electric field-induced band gap modulation in nitride nanomembranes

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.

Deposition and photo-induced electrical resistivity of dip-coated NiO thin films from a precipitation process

Thin films of the semiconductor NiO are deposited using a straightforward combination of simple and versatile techniques: the co-precipitation in aqueous media along with the dip- coating process. The obtained material is characterized by gravimetric/differential thermal analysis (TG-DTA) and X-ray diffraction technique. TG curve shows 30 % of total mass loss, whereas DTA indicates the formation of the NiO phase about 578 K (305 C). X-ray diffraction (XRD) data confirms the FCC crystalline phase of NiO, whose crystallinity increases with thermal annealing temperature. UV-Vis optical absorption measurements are carried out for films deposited on quartz substrate in order to avoid the masking of bandgap evaluation by substrate spectra overlapping. The evaluated bandgap is about 3.0 eV. Current-voltage (I-V) curves measured for different temperatures as well as the temperature-dependent resistivity data show typical semiconductor behavior with the resistivity increasing with the decreasing of temperature. The Arrhenius plot reveals a level 233 meV above the conduction band top, which was attributed to Ni2+ vacancy level, responsible for the p-type electrical nature of NiO, even in undoped samples. Light irradiation on the films leads to a remarkable behavior, because above bandgap light induced a resistivity increase, despite the electron-hole generation. This performance was associated with excitation of the Ni 2+ vacancy level, due to the proximity between energy levels. © 2012 Springer Science+Business Media New York.

Projeto de uma referência de tensão com baixa susceptibilidade a interferência eletromagnética (EMI)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Deposição e caracterização de filmes finos de GaAs e 'Al IND. 2''O IND. 3' para potencial utilizado em transistores

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Matrizes semicondutoras GaAs e Sn'X IND. 2' dopado com terras-raras Ce ou Eu: investigação do transporte elétrico

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Uma contribuição para o estudo da estrutura de bandas de energia em filmes finos de 'SNO IND.2'

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Modulação das propriedade ópticas de semicondutores pela incorporação de íons terras raras

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das propriedades ópticas e estruturais de espinélios do tipo 'ZNAL IND. 2 O IND. 4' contendo 'EU POT. 3+' ou 'TB POT. 3+'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigação das propriedades elétricas, ópticas e eletroquímicas de filmes finos semicondutores de BiVO4 e NiO para aplicação em fotoeletrocatálise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência da temperatura e do tipo de substrato em filmes de GaN depositados por magnetron sputtering reativo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Caracterização de nanoestruturas de óxido de estanho como sensores de gás

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Fotoluminescência e transporte elétrico em 'SNO IND. 2' dopado com os íons terras-raras 'ER POT. 3'/' e 'EU POT. 3'/'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Simulação numérica da fase líquida na deposição de filmes finos via sol-gel: aplicações para dióxido de estanho

Pós-graduação em Ciência e Tecnologia de Materiais - FC