Aluminum tolerance on genotypes of signal grass

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Bacterial diversity in soil in response to different plans, phosphate fertilizers and liming

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effectiveness of fused magnesium potassium phosphate for marandu grass

O alto custo atual do KCl e a grande dependência de sua importação para suprir a demanda nacional sugerem a necessidade de estudos que procurem avaliar a eficiência de outras fontes de K, principalmente aquelas baseadas em matéria-prima nacional. Nesse sentido, foi conduzido um experimento em casa de vegetação com amostras de um Latossolo Vermelho distrófico textura média, adotando-se o delineamento inteiramente casualizado em esquema fatorial 4 x 3 x 2, sendo quatro doses de K (0, 60, 120 e 180 mg kg-1 de K), três fontes [(cloreto de potássio (KCl)], termofosfato magnesiano potássico (FMPP) e a mistura de 70 % FMPP + 30 % KCl) e duas granulometrias (100 e 60 mesh), com três repetições. Verificou-se que a adubação potássica promoveu incrementos significativos na produção de matéria seca (parte aérea) e nos teores de K no solo e na planta, não havendo diferenças entre as fontes e suas granulometrias. Os níveis críticos de K no solo e na parte aérea das plantas foram de 1,53 mmol c dm-3 e 19,1 g kg-1, respectivamente.

Carbohydrate metabolism of Xylella fastidiosa: Detection of glycolytic and pentose phosphate pathway enzymes and cloning and expression of the enolase gene

The objective of this work was to assess the functionality of the glycolytic pathways in the bacterium Xylella fastidiosa. To this effect, the enzymes phosphoglucose isomerase, aldolase, glyceraldehyde-3-phosphate dehydrogenase and pyruvate kinase of the glycolytic pathway, and glucose 6-phosphate dehydrogenase of the Entner-Doudoroff pathway were studied, followed by cloning and expression studies of the enolase gene and determination of its activity. These studies showed that X. fastidiosa does not use the glycolytic pathway to metabolize carbohydrates, which explains the increased duplication time of this phytopatogen. Recombinant enolase was expressed as inclusion bodies and solubilized with urea (most efficient extractor), Triton X-100, and TCA. Enolase extracted from X. fastidiosa and from chicken muscle and liver is irreversibly inactivated by urea. The purification of enolase was partial and resulted in a low yield. No enzymatic activity was detected for either recombinant and native enolases, aldolase, and glyceraldehyde-3-phosphate dehydrogenase, suggesting that X. fastidiosa uses the Entner-Doudoroff pathway to produce pyruvate. Evidence is presented supporting the idea that the regulation of genes and the presence of isoforms with regulation patterns might make it difficult to understand the metabolism of carbohydrates in X. fastidiosa.

Dinâmica do surgimento de brotos de alfafa em função de diferentes fontes de fósforo, da aplicação de gesso e do momento de calagem

O fósforo (P) é um importante nutriente para o surgimento de brotos em alfafa. Através do estudo da dinâmica do aparecimento de brotos pode-se obter informações que auxiliam na adoção de um manejo eficiente. Diversas fontes de P estão disponíveis no mercado, sendo que a eficiência deste nutriente é afetada pela acidez do solo. O uso do gesso com fosfato de rocha pode corrigir o perfil do solo em relação ao alumínio e diminuir a fixação de P. Num experimento conduzido em vasos, superfosfato triplo (ST), fosfato de Gafsa (FG) e FG com gesso, aplicados antes e depois da calagem, foram avaliados para se estudar o número de brotos laterais e basais em alfafa, assim como a dinâmica do surgimento destes brotos em função das seguintes doses: 0, 50, 100 e 200 mg P dm-3. A avaliação envolveu três cortes da cultura. A dose de 100 mg P dm-3 retardou em 6 a 15 dias o surgimento do segundo broto basal quando comparada à dose de 200 mg P dm-3. Os brotos laterais surgiram 24 dias após o aparecimento dos brotos basais quando empregou-se a dose de 200 mg P dm-3. A adição de fósforo aumentou o número de brotos basais e laterais de 1,5 e 0,5 broto/planta para 8,0 e 6,9 brotos/planta, respectivamente. Verificou-se um maior número de hastes basais com a utilização do FG (5,1 brotos/planta) do que com o uso de ST (2,9 brotos/planta). Não houve efeito do gesso sobre os brotos laterais. O uso do FG mais gesso resultou em 5,9 brotos basais/planta, enquanto que o uso do FG não combinado com gesso resultou em 3,9 brotos basais/planta. Não houve efeito do momento de calagem sobre o número de brotos da alfafa.

Phosphate fertilization and phosphorus forms in an Oxisol under no-till

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effects of aluminum on plant growth and nutrient uptake in young physic nut plants

Aluminum (Al3+) toxicity is a major limiting factor to crop productivity in acid soils. The effects of aluminum on root and shoot growth of physic nut (Jatropha curcas L.) young plants and, the uptake and distribution of phosphorus, calcium, magnesium and aluminum in the roots and shoots were investigated in the present study. Plants were grown in 2.5L pots in a greenhouse. After fourteen days of adaptation to nutrient solution, plants were exposed to Al concentrations of 0, 370, 740, 1,100 and 1,480 mu mol L-1, corresponding to an active Al3+ solution of 13.3, 35.3, 90.0, 153.3 and 220.7 mu mol L-1, respectively. The dry matter partitioning between roots, stems and leaves, and the concentrations of P, Ca, Mg and Al in plant tissue, were measured after 75 days exposure to Al. The increasing level of Al3+ activity in solution progressively decreased the growth of the shoot and root of physic nut plants, and at the two highest active Al3+ levels, plants showed morphological abnormalities typical of the toxicity caused by this metal. Higher Al3+ activity reduced P concentrations in leaves and Ca and Mg in leaves and roots of physic nut, demonstrating the effect of Al on the uptake, transport and use of these nutrients by plants. The Al accumulated preferentially in the roots of physic nut, whereas only a small amount was transported to shoots.

Recombinant expression of glycerol-3-phosphate dehydrogenase using the Pichia pastoris system

In the present study, the GPD2 gene from Saccharomyces cerevisiae, which codifies for the enzyme glycerol-3-phosphate dehydrogenase (GPDH), was cloned from the pPICZ-alpha expression vector and used with the purpose of inducing the extracellular expression of the glycerol-3-phosphate dehydrogenase under the control of the methanol-regulated AOX promoter. The presence of the GPD2 insert was confirmed by PCR analysis. Pichia pastoris X-33 (Mut(+)) was transformed with linearized plasmids by electroporation and transformants were selected on YPDS plates containing 100 mu g/mL of zeocin. Several clones were selected and the functionality of this enzyme obtained in a culture medium was assayed. Among the mutants tested, one exhibited 3.1 x 10(-2) U/mg of maximal activity. Maximal enzyme activity was achieved at 6 days of growth. Medium composition and pre-induction osmotic stress influenced protein production. Pre-induction osmotic stress (culturing cells in medium with either 0.35 M sodium chloride or 1.0 M sorbitol for 4h prior to induction) led to an increase in cell growth with sorbitol and resulted in a significant increase in GPDH productivity with sodium chloride in 24h of induction approximately fivefold greater than under standard conditions (without pre-induction). (C) 2010 Elsevier B.V. All rights reserved.

Chemical and microbiological evaluation of the internal surfaces of aluminum tubes both unlined and lined with epoxi resin by means of the stereoscope and scanning electron microscope

A superfície interna das bisnagas fabricadas com alumínio não revestido e revestido com resina epóxi, utilizadas para acondicionar cremes, pomadas, géis, etc., foram avaliadas quimicamente e por métodos microbiológicos correlacionados com a aderência de microrganismos. A prova da porosidade e da resistência à remoção da resina foi observada por meio do microscópio eletrônico de varredura (Topcon FM300) e estereoscópio Leica (MZ12) acoplado a Sistema de Digitalização de Imagens. Para avaliar a ação dos microrganismos foram utilizados corpos-de-prova esterilizados (discos de 10mm de diâmetro), imersos em caldo Mueller Hinton (Difco) e colocados em tubos de polipropileno com tampa de rosca (Corning). Foram inoculados tubos com meio de cultura para cada uma das suspensões bacterianas (10(9)UFC/mL) de Streptococcus agalactiae, Staphylococcus aureus, Acinetobacter lwoffii e Candida albicans, incubados a 37°C, sob agitação constante durante 12 dias. O meio de cultura era trocado a cada 3 dias. Após esse período, os corpos-de prova foram removidos, processados e observados em microscópio eletrônico de varredura JEOL-JSM (T330A). A observação por meio do microscopio eletrônico de varredura mostrou a aderência e a formação de biofilme sobre a superfície de alumínio não revestido e revestido com resina epóxi.

Phosphate forms in plant and their internal buffering in five soybean cultivars

Diferenças inter e intra-específicas na habilidade de suportar períodos de estresse nutricional podem dever-se à capacidade de armazenar e liberar íons dos vacúolos, e, ou, à intensidade de retranslocação de nutrientes em tais condições. Neste trabalho, pretendeu-se avaliar diferenças varietais quanto ao tamanho do pool não-metabólico de Pi; velocidade de liberação do Pi previamente armazenado (VLPi), quando o P citoplasmático cai a um valor limite; capacidade de transportar Pi de regiões menos ativas para aquelas mais ativas metabolicamente e definir compartimentos que são preferencialmente fontes e os que são preferencialmente drenos para o Pi, em condições de absorção limitada de P. Avaliaram-se a produção de matéria seca e os teores internos de Pi, orgânico (Po) e total solúvel em ácido (Pts), de diferentes órgãos de plantas dos cultivares de soja (Glycine max L. Merrill) Santa Rosa, Uberaba, IAC8, Doko e UFV1, submetidos a oito dias de omissão do elemento. A VLPi foi estimada como tangente às equações obtidas para Pi como função do perído de omissão no ponto médio do período de omissão em que houve maior decréscimo em Pi (zero a quatro dias de omissão de P), t = dois dias, considerando-se que -deltaPi/deltat expressa a velocidade de liberação de Pi. A capacidade interna de tamponamento de Pi (CTIPi) foi calculada como o inverso da VLPi. O cultivar Santa Rosa apresentou maior capacidade de armazenar Pi, quando o suprimento externo foi alto, liberando-o mais intensamente sob condições de baixo suprimento de P que os cultivares IAC8 e UFV1. O cultivar Uberaba mostrou-se superior ao Doko em sua habilidade de armazenar e utilizar o Pi. Folhas superiores mostraram ser o principal dreno para o Pi armazenado em folhas medianas e inferiores, seguidas por raízes e caules. Raízes comportaram-se como fontes ou drenos para o Pi. Raízes e folhas superiores apresentaram maiores (VLPi) e menores valores de CTIPi que folhas medianas e folhas inferiores, sendo o caule o compartimento com menor VLPi e maior CTIPi. Dentre as variedades, as diferenças foram pequenas, destacando-se a maior VLPi e menor CTIPi do cultivar Santa Rosa. O cultivar Doko apresentou a menor VLPi e maior CTIPi, enquanto Uberaba, IAC8 e UFV1 ocuparam posição intermediária quanto a essas características.

Amorphous carbon nitrogenated films prepared by plasma immersion ion implantation and deposition

In this work, an investigation was conducted on amorphous hydrogenated-nitrogenated carbon films prepared by plasma immersion ion implantation and deposition. Glow discharge was excited by radiofrequency power (13.56 MHz, 40 W) whereas the substrate-holder was biased with 25 kV negative pulses. The films were deposited from benzene, nitrogen and argon mixtures. The proportion of nitrogen in the chamber feed (R-N) was varied against that of argon, while keeping the total pressure constant (1.3 Pa). From infrared reflectance-absorbance spectroscopy it was observed that the molecular structure of the benzene is not preserved in the film. Nitrogen was incorporated from the plasma while oxygen arose as a contaminant. X-ray photoelectron spectroscopy revealed that N/C and O/C atomic ratios change slightly with R-N. Water wettability decreased as the proportion of N in the gas phase increased while surface toughness underwent just small changes. Nanoindentation measurements showed that film deposition by means of ion bombardment was beneficial to the mechanical properties of the film-substrate interface. The intensity of the modifications correlates well with the degree of ion bombardment. (c) 2006 Elsevier B.V. All rights reserved.

Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Amorphous hydrogenated carbon films treated by SF(6) plasma

This work was performed to verify the chemical structure, mechanical and hydrophilic properties of amorphous hydrogenated carbon films prepared by plasma enhanced chemical vapor deposition, using acetylene/argon mixture as monomer. Films were prepared in a cylindrical quartz reactor, fed by 13.56 MHz radiofrequency. The films were grown during 5 min, for power varying from 25 to 125 W at a fixed pressure of 9.5 Pa. After deposition, all samples were treated by SF(6) plasma with the aim of changing their hydrophilic character. Film chemical structure investigated by Raman spectroscopy, revealed the increase of sp(3) hybridized carbon bonds as the plasma power increases. Hardness measurements performed by the nanoindentation technique showed an improvement from 5 GPa to 14 GPa following the increase discharge power. The untreated films presented a hydrophilic character, which slightly diminished after SF(6) plasma treatment.

Development of amorphous carbon protective coatings on poly(vinyl)chloride

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Properties of hydrogenated amorphous carbon films deposited by PECVD and modified by SF6 plasma

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)