Inorganic nanoparticles in organic-inorganic hybrid hosts for planar waveguides

Planar waveguides have been prepared on the ZrO2-(3-glycidiloxypropyl)trimethoxysilane (GPTS) system. Stable sols containing ZrO2 nanoparticles have been prepared and characterized by Photon Correlation Spectroscopy. The nanosized sol was embedded in (3-glycidoxipropyl)trimethoxisilane (GPTS) used as a hybrid host for posterior deposition. The opticalparameters of the waveguides such as refractive index, thickness and propagating modes and attenuation coefficient were measured at 632.8. 543.5 and 1550 nm by the prism coupling technique as a function of the Zr02 content. The planar waveguides present thickness of a few microns and support well confined propagating modes. Er doped samples display weak and broad (δλ≈96nm) emission at 1.5 μm.

Electroosmotic pumping in rectangular microchannels: A numerical treatment by the finite element method

In this work, the analysis of electroosmotic pumping mechanisms in microchannels is performed through the solution of Poisson-Boltzmann and Navier Stokes equations by the Finite Element Method. This approach is combined with a Newton-Raphson iterative scheme, allowing a full treatment of the non-linear Poisson-Boltzmann source term which is normally approximated by linearizations in other methods.

Rare earth doped HfO2 nanoparticles embedded in SiO2-HfO2 planar waveguides. Preparation, optical, structural and spectroscopic characterization

In this work we present results on the preparation of planar waveguides based on HfO2 and HfO2-SiO2. Stable sols containing europium and erbium doped HfO2 nanoparticles have been prepared and characterized. The nanosized sol was either deposited (spin-coating) on quartz substrates or embedded in (3-glycidoxipropil)trimethoxisilane (GPTS) used as a hybrid host for posterior deposition. The refractive index dispersion and luminescence characteristics were determined for the resulting HfO2 films. The optical parameters of the waveguides such as refractive index, thickness and propagation losses were measured for the hybrid composite. The planar waveguides present thickness of a few micra and support well confined propagating modes.

Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Erbium-activated HfO2-based waveguides for photonics

70SiO2 - 30HfO2 planar waveguides, activated by Er3+ concentration ranging from 0.3 to 1 mol%, were prepared by solgel route, using dip-coating deposition on silica glass substrates. The waveguides showed high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 nm or 514.5 nm continuous-wave laser light, the waveguides showed the 4I 13/2→4I15/2 emission band with a bandwidth of 48 nm. The spectral features were found independent both on erbium content and excitation wavelength. The 4I13/2 level decay curves presented a single exponential profile, with a lifetime between 2.9-5.0 ms, depending on the erbium concentration.

Nucleation and crystallization of titania nanoparticles in silica titania planar waveguides: A study by low frequency Raman scattering

SiO2 (1-x) - TiO2 (x) waveguides, with the mole fraction x in the range 0.07 - 0.20 and thickness of about 0.4 μm, were deposited on silica substrates by a dip-coating technique. The thermal treatments at 700-900°C, used to fully densify the xerogels, produce nucleation of TiO2 nanocrystals even for the lowest TiO2 content. The nucleation of TiO2 nanocrystals and their growth by thermal annealing up to 1300°C were studied by waveguide Raman spectroscopy, for the SiO2 (0.8) - TiO2 (0.2) composition. By increasing the annealing temperature, the Raman spectrum evolves from that typical of the silica-titania glass to that of anatase, but brookite phase is dominant at intermediate temperatures. In the low. frequency region (5-50 cm-1) of the Raman spectra, acoustic vibrations of the nanocrystals are observed. From the measured line shapes, we can deduce the size distribution of the particles. The results are compared with those obtained from the line widths in the X-ray diffraction patterns. Nanocrystals with a mean size in the range 4-20 nm are obtained, by thermal annealing in a corresponding range of 800-1300°C.

Determination of resonant frequencies of triangular and rectangular microstrip antennas, using artificial neural networks

This paper presents models that can be used in the design of microstrip antennas for mobile communications. The antennas can be triangular or rectangular. The presented models are compared with deterministic and empirical models based on artificial neural networks (ANN) presented in the literature. The models are based on Perceptron Multilayer (PML) and Radial Basis Function (RBF) ANN. RBF based models presented the best results. Also, the models can be embedded in CAD systems, in order to design microstrip antennas for mobile communications.

New contributions to the determination of resonance frequencies of rectangular microstrip antennas by neural networks

This paper uses artificial neural networks (ANN) to compute the resonance frequencies of rectangular microstrip antennas (MSA), used in mobile communications. Perceptron Multi-layers (PML) networks were used, with the Quasi-Newton method proposed by Broyden, Fletcher, Goldfarb and Shanno (BFGS). Due to the nature of the problem, two hundred and fifty networks were trained, and the resonance frequency for each test antenna was calculated by statistical methods. The estimate resonance frequencies for six test antennas were compared with others results obtained by deterministic and ANN based empirical models from the literature, and presented a better agreement with the experimental values.

Fabrication and characterization of GeO2-PbO optical waveguides

This work presents studies of GeO2-PbO thin films deposited by RF Sputtering for fabrication of rib-waveguide. GeO2-PbO vitreous targets were prepared melting the reagents in alumina crucible. Thin films were deposited at room temperature using pure Ar plasma, at 5 mTorr pressure and RF power of 40 W on substrates of (100) silicon wafers. Rutherford Backscattering Spectroscopy (RBS) analyses were employed for the determination of the chemical elements present in the GeO2-PbO film. Geometry and sidewall of the waveguides were investigated by Scanning Electron Microscopy (SEM). The mode propagation in the waveguide structure of GeO2-PbO thin films was analyzed using an integrated optic simulation software to obtain a monomode propagation. © The Electrochemical Society.

Broadband NIR emission in novel sol-gel Er3+-doped SiO 2-Nb2O5 glass ceramic planar waveguides for photonic applications

This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2-Nb 2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2-xNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1-W5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2-Nb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 → 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48-68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices. © 2012 Elsevier B.V. All rights reserved.

Production and characterization of Tm3+/Yb3+ codoped waveguides based on PbO-GeO2 thin films

Fabrication and optical characterization of Tm3+/Yb3+ codoped PbO-GeO2 (PGO) pedestal-type waveguides are investigated in this work. It is important to mention that, to the best of authors' knowledge, the use of PGO pedestal-type waveguide has not been studied before. PGO thin films codoped with Tm3+ and Yb3+ were obtained through RF magnetron sputtering technique. The pedestal profile was obtained using conventional optical lithography procedures, followed by plasma etching and sputtering deposition. The profile of Tm3+/Yb3+ codoped PGO waveguides was observed by means of Scanning Electron Microscopy (SEM) measurements. Also the infrared and infrared-to-visible frequency upconversion luminescences of Tm3+ ions were measured exciting the samples with a cw 980 nm diode laser. Propagation losses around 11 dB/cm and 9 dB/cm were obtained at 630 and 1050 nm, respectively, for waveguides in the 20-100 μm width range. Single-mode propagation was observed for waveguides width up to 12 μm and 7 μm, at 1050 nm and 630 nm, respectively; larger waveguides width provided multi-mode propagation. The present results corroborate the possibility of using Tm3+/Yb3+ codoped PGO thin films as active waveguide for photonic applications. © 2013 Elsevier B.V. All rights reserved.

Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optimized design of substrate-integrated hollow waveguides for mid-infrared gas analyzers

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Production and characterization of Tm3+/Yb3+ codoped pedestal-type PbO-GeO2 waveguides

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Tailoring the refractive index of Ge-S based glass for 3D embedded waveguides operating in the mid-IR region

The photosensitivity of GeSx binary glasses in response to irradiation to femtosecond pulses at 800 nm is investigated. Samples with three different molecular compositions were irradiated under different exposure conditions. The material response to laser exposure was characterized by both refractometry and micro-Raman spectroscopy. It is shown that the relative content of sulfur in the glass matrix influences the photo-induced refractive index modification. At low sulfur content, both positive and negative index changes can be obtained while at high sulfur content, only a positive index change can be reached. These changes were correlated with variations in the Raman response of exposed glass which were interpreted in terms of structural modifications of the glass network. Under optimized exposure conditions, waveguides with positive index changes of up to 7.8x10−3 and a controllable diameter from 14 to 25 μm can be obtained. Direct inscription of low insertion losses (IL = 3.1 – 3.9 dB) waveguides is demonstrated in a sample characterized by a S/Ge ratio of 4. The current results open a pathway towards the use of Ge-S binary glasses for the fabrication of integrated mid-infrared photonic components.