135 resultados para Optical Cooling Of Atoms


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The nonlinear (NL) response of lead-germanium oxide amorphous films was investigated using a Ti:saphire laser delivering pulses of approximate to 150 fs at 800 nm. The Kerr shutter technique was employed to reveal the time response of the nonlinearity that is smaller than 150 fs. The sign and magnitude of the nonlinearity were obtained using a novel technique called thermally managed eclipse Z scan which allows the simultaneous characterization of cumulative and noncumulative NL effects. The NL refractive index of electronic origin, n(2)approximate to 2x10(-17) m(2)/W, and the NL absorption coefficient, alpha(2)approximate to 3x10(3) cm/GW, were determined. (c) 2007 American Institute of Physics.

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Natural alexandrite (BeAl2O4:Cr3+) crystals are investigated as regards the effects of annealing on their optical properties. Optical absorption spectra are measured from the ultraviolet (190 nm) to the near infrared (900 nm), for a sample subjected to consecutive annealing processes, where time and temperature are varied. Besides this, luminescence spectra are simultaneously obtained for this sample, excited with a Kr+ laser source, tuned on an ultraviolet multi-line mode (337.5, 350.7 and 356.4 nm). We observe from absorption as well as from emission data that annealing mainly influences the distribution of Cr3+ and Fe3+ ions, located on sites of a mirror plane (C-s symmetry), which are responsible for the optical properties of alexandrite. The results obtained lead to the conclusion that annealing induces a modification of the population of Cr3+ on C-s sites as well as on sites located on an inversion plane (C-i). Annealing could improve the optical properties of this material, as regards its application as a tunable laser.

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In this work the quantitative theoretical treatment for two beam mode mismatched thermal lens spectrometry is applied to investigate the thermo-optical properties of chalcohalide (chalcolgenides and halides mixture) glasses. For the three kinds of glass studied the thermal diffusivity varied between 2.5 and 2.7 x 10(-3) cm(2) s(-1). Using these results and supposing Dulong-Petit specific heats we estimated the thermal conductivity and temperature ratio of optical path length (ds/dT) and temperature coefficient of refractive index (dn/dT). All samples had positive ds/dT(similar to 3.3 x 10(-6) K-1) and negative dn/dT (similar to -26 x 10(-6) K-1). The difference between these parameters and the change of signal are consequences of the expansion coefficient (13 x 10(-6) K-1) and refractive index (n similar to 2.6) of chalcohalides. (C) 1999 Elsevier B.V. B.V. All rights reserved.

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Polymer films were grown in rf discharges containing different proportions of C2H2 and SF6. Quantitative optical emission spectrometry (actinometry) was used to follow the trends in the plasma concentrations of the species H and F, and more tentatively, of CH, CF, and CF2, as a function of the feed composition. Infrared spectroscopy revealed the density of CH and CF bonds in the deposited material. As the partial pressure of SF6 in the feed was increased, the degree of fluorination of the polymer also rose. The form of the dependency of the deposition rate on the proportion of SF6 in the feed was in good qualitative agreement with the activated growth model. From transmission ultraviolet visible spectroscopy data the refractive index and the absorption coefficient of the polymers were calculated as a function of the deposition parameters. Since the optical gap depended to some extent upon the degree of fluorination, it could, within limits, be determined by a suitable choice of the proportion of SF6 in the feed. A qualitative explanation of this relationship is given.

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SnO2:Sb multi-layer coatings were prepared by the Pechini method. An investigation was made of the influence of the concentration of Sb2O3 and the viscosity of the precursor solution on the electrical and optical properties of SnO2 thin films. The use of a multi-layer system as an alternative form of increasing the packing and. thus. decreasing porosity proved to be efficient, decreasing the system's resistivity without altering its optical properties. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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The optical nonlinearity of tungstate fluorophosphate glasses, synthesized in the NaPO3-BaF2-WO3 system, was investigated through experiments based on the third-order susceptibility, chi((3)). Nonlinear (NL) refraction and NL absorption measurements in the picosecond regime were performed using the Z-scan technique at 532 nm. NL refractive index, n(2)proportional toRe chi((3)), ranging from 0.4x10(-14) cm(2)/W to 0.6x10(-14) cm(2)/W were determined. The two-photon absorption coefficient, alpha(2)proportional toIm chi((3)), for excitation at 532 nm, vary from 0.3 to 0.5 cm/GW. Light induced birefringence experiments performed in the femtosecond regime indicate that the response time of the nonlinearity at 800 nm is faster than 100 fs. The experiments show that chi((3)) is enhanced when the WO3 concentration increases and this behavior is attributed to the hyperpolarizabilities associated to W-O bonds. (C) 2004 American Institute of Physics.

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The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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Polycrystalline BaWO4 and PbWO4 thin films having a tetragonal scheelite structure were prepared at different temperatures. Soluble precursors such as barium carbonate, lead acetate trihydrate and tungstic acid, as starting materials, were mixed in aqueous solution. The thin films were deposited on silicon, platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure of the thin films were investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, and specular reflectance infrared Fourier transform spectroscopy, respectively. Nucleation stages and surface morphology evolution of thin films on silicon substrates have been studied by atomic force microscopy. XRD characterization of these films showed that BaWO4 and PbWO4 phase crystallize at 500 degreesC from an inorganic amorphous phase. FTIR spectra revealed the complete decomposition of the organic ligands at 500 degreesC and the appearance of two sharp and intense bands between 1000 and 600 cm(-1) assigned to vibrations of the antisymmetric stretches resulting from the high crystallinity of both thin films. The optical properties were also studied. It was found that BaWO4 and PbWO4 thin films have Eg = 5.78 eV and 4.20 eV, respectively, of a direct transition nature. The excellent microstructural quality and chemical homogeneity results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of BaWO4 and PbWO4 thin films. (C) 2003 Elsevier Ltd. All rights reserved.

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This work is intended to report on optical measurements in a parabolic quantum well with a two dimensional-three dimensional electron gas. Photoluminescence results show broad spectra which are related to emission involving several subbands on conduction band with the fundamental level of the valence band. This assumption is based on the behavior of the PL peak position and the full width at half maximum in the function of the incident power intensity. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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Er3+ doped SnO2 xerogels have been obtained from aqueous colloidal suspensions. Emission and excitation spectra were obtained and allowed the identification of two main families of sites for Er3+. In the first one Er3+ substitutes for Sn4+ in the SnO2 cassiterite structure. In the second Er3+ are found adsorbed at the SnO2 particle surface. For the first family of sites the technological important infrared Er3+ emission about 1.5 mum is efficiently excited through absorption at the SnO2 conduction band at 3.8 eV. on the other hand the emission due to adsorbed ions appears inhomogeneously broadened by the statistical distribution of sites available for Er3+ ions at the surface of the particles. Moreover it is not excited by the host. The emission of this second family of sites could be also excited by an energy transfer mechanism involving Yb3+ ions also adsorbed a posteriori at particles surface. Results are compared with spectra obtained for Eu3+ doped samples. (C) 2002 Elsevier B.V. B.V. All rights reserved.

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The third-order nonlinear optical properties of tellurite glasses with different compositions were investigated in the femtosecond regime at 810 nm. Using the I-scan technique, positive nonlinear refractive indices of similar to 10(-15) cm(2)/W were measured. The authors also determined that nonlinear absorption was negligible for all studied samples. This result, added to their good chemical stability, indicates that tellurite glasses are promising materials for ultrafast photonic applications. (c) 2006 American Institute of Physics.

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Antimony doped tin oxide thin films were deposited on glass by a chemical route derived from Pechini method. Particular emphasis was given to the microstructure of crystallized films. Crystalline phase formation was studied by grazing incident X-ray diffraction and by thermal analyses. Scanning electron microscopy was carried out for microstructure characterization, surface roughness was observed using scanning tunneling microscope and the optical transmittance measurements were performed in the wavelength range of 200-800 nm. (C) 2002 Kluwer Academic Publishers.

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Polymeric precursor solution was used to deposit by spin-coating pure and Mg doped LiNbO3 thin films on sapphire substrates. The effects of magnesium addition on crystallinity, morphology and optical properties of the annealed films were investigated. X-ray diffraction patterns indicate the oriented growth of the films. AFM studies show that the films are very homogeneous, dense and present smooth surfaces. The refractive index and optical losses obtained by the prism coupling method were influenced by the magnesium addition.

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The refractive index and the temperature coefficient of the optical path length change of tellurite (80TeO(2):20Li(2)O) and chalcogenide glasses (72.5Ga(2)S(3):27.5La(2)O(3)) were determined as a function of temperature (up to 150 degrees C) and wavelength (in the range between 454 and 632.8 nm). The tellurite glass exhibits the usual refractive index dispersion in the wavelength range analyzed, while anomalous refractive index dispersion was observed for the chalcogenide glass between 454 and 530 nm. The dispersion parameters were determined by means of the single-effective oscillator model. In addition, a strong dependence of the temperature coefficient of the optical path length on the photon energy and temperature was found for the chalcogenide glass. The latter was correlated to the shift of the optical band gap (or electronic edge) with temperature, which was interpreted by the electron-phonon interaction model. (C) 2007 American Institute of Physics.

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.