80 resultados para Metal oxide nanostructures


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A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.

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In the present work it was studied the main aspect that influences on degradation and physical-chemical properties at grain-boundary region of metal oxide varistors and its consequences on microstructure and nonohmic electric properties. Based on the comprehension of the degradation aspects it was proposed some methodologies to recover the varistors nonohmic properties after being failed with long (2000 μs) and short current pulses (8/20 μs). Our analysis shown that one of the cause of degradation process is related to the lowering of oxygen species amount at grain-boundary region. Therefore, it is possible to re-promote oxygen enrichment of such regions by specific thermal treatments in rich oxygen atmospheres (the best condition found in the present work was temperatures around 900°C for 2 h at an oxygen flux of 15 1/h). The proposed nonohmic properties recovering procedure appear to be valid for all kind metal oxide varistors studied and is very important from technological point of view.

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Copper, zinc and nickel oxides present different properties in nanostructured form. These nanomaterials present very interesting morphologies such as urchin and flowers. This differents arquitechures can be employed in near future in several areas of applications as: nanocatalysis, nanooptoeletronic and nanomedicine.

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The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical BJT. Using sufficient gate bias to operate the MOS transistor in inversion mode, the photodetector allows for increasing the photocurrent gain by 106 at low light intensities when the base-emitter voltage is smaller than 0.4 V, and BJT is off. Two operation modes, with constant voltage bias between gate and emitter/source terminals and between gate and base/body terminals, allow for tuning the photoresponse from sublinear to slightly above linear, satisfying the application requirements for wide dynamic range, high-contrast, or linear imaging. MOSFETs from a standard 0.18-μm triple-well complementary-metal oxide semiconductor technology with a width to length ratio of 8 μm /2 μm and a total area of ∼ 500μm2 are used. When using this area, the responsivities are 16-20 kA/W. © 2001-2012 IEEE.

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We have prepared heavy metal oxide glasses containing metallic copper nanoparticles with promising nonlinear optical properties which were determined by Z-scan and pump-probe measurements using femtosecond laser pulses. For the wavelengths within the plasmon band, we have observed saturable absorption and response times of 2.3 ps. For the other regions of the spectrum, reverse saturable absorption and lifetimes shorter than 200 fs were verified. The nonlinear refractive index is about 2.0 × 10-19 m2/W from visible to telecom region, thus presenting an enhancement effect at wavelengths near the plasmon and Cu+2 d-d band. © 2013 Springer Science+Business Media New York.

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Mo-doped TiO2 powders were prepared using a dry mixture of TiO2 and MoO3 oxides with several compositions, followed by a calcination step at several temperatures. The resulting oxide system develops yellow and green tones. The XRD patterns showed only traces of MoO 3; however, EDS results, combined with TG/DTA data, confirmed the presence of molybdenum ions, suggesting that the changes in optical properties of the oxide system is due to the incorporation of Mo ions into the TiO 2 matrix, substituting Ti+4 with Mo+6 ions. The band gap decreased with increasing of MoO3 content; on the other hand, the band gap reached a maximum value at about 850°C to 910°C when plotted as a function of the calcination temperature. The glazes produced showed that the oxide system under study is a potential material for use as abinary ceramic pigment. Copyright © 2013 Taylor & Francis Group, LLC.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Pós-graduação em Ciência e Tecnologia de Materiais - FC

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)