36 resultados para LOW-TEMPERATURE GROWTH


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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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(Nota sobre a germinação de sementes de Vochysia tucanorum tratadas com reguladores vegetais). O objetivo deste trabalho foi avaliar a resposta germinativa sob luz branca e escuro de sementes de Vochysia tucanorum Mart. tratadas com GA3 e CEPA. Sementes recém-coletadas de uma área de Cerrado foram armazenadas durante 14 dias em duas temperaturas (25 ± 2 °C e 7 ± 1 °C). Após o período de armazenamento, as sementes foram pré-tratadas com água destilada (controle), ácido giberélico (GA3), ácido 2-cloroetilfosfônico (CEPA) e uma mistura de GA3 + CEPA; em seguida, as sementes foram semeadas em placas de Petri sobre papel filtro umedecido com água destilada e colocadas para germinar em escuro e sob luz branca. Os resultados sugerem que as sementes não são fotoblásticas nem dormentes, no entanto um comportamento fotoblástico emerge quando as sementes foram previamente armazenadas em baixa temperatura e embebidas em soluções de GA3 e CEPA. em geral, não houve diferença entre as temperaturas de armazenamento de 7 °C e 25 °C. A germinação sob luz branca de sementes pré-tratadas com CEPA + GA3 e CEPA foi antecipada, em comparação com o controle de água destilada, sendo que o efeito da mistura CEPA + GA3 foi mais pronunciado do que o de CEPA sozinho. Assim, a taxa de germinação de sementes de V. tucanorum, sob luz branca, pode ser melhorada pela embebição das mesmas em soluções de CEPA ou de CEPA + GA3.

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Indium-tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 degrees C in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor-liquid-solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/mu m(2). After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the [100] direction. These structures have potential applications in electrical and optical nanoscale devices.

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Lead molybdate (PbMoO4) crystals were synthesized by the co-precipitation method at room temperature and then processed in a conventional hydrothermal (CH) system at low temperature (70 °C for different times). These crystals were structurally characterized by X-ray diffraction (XRD), Rietveld refinement, micro-Raman (MR) and Fourier transformed infrared (FT-IR) spectroscopies. Field emission scanning electron microscopy images were employed to observe the shape and monitor the crystal growth process. The optical properties were investigated by ultraviolet-visible (UV-Vis) absorption and photoluminescence (PL) measurements. XRD patterns and MR spectra indicate that these crystals have a scheelite-type tetragonal structure. Rietveld refinement data possibilities the evaluation of distortions in the tetrahedral [MoO 4] clusters. MR and FT-IR spectra exhibited a high mode ν1(Ag) ascribed to symmetric stretching vibrations as well as a large absorption band with two modes ν3(Eu and Au) related to anti-symmetric stretching vibrations in [MoO 4] clusters. Growth mechanisms were proposed to explain the stages involved for the formation of octahedron-like PbMoO4 crystals. UV-Vis absorption spectra indicate a reduction in optical band gap with an increase in the CH processing time. PL properties of PbMoO4 crystals have been elucidated using a model based on distortions of tetrahedral [MoO4] clusters due to medium-range intrinsic defects and intermediary energy levels (deep and shallow holes) within the band gap. © 2012 Elsevier Ltd. All rights reserved.