Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Glucose biosensor based on multisegment nanowires exhibiting reversible magnetic control

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Monitoramento de danos estruturais utilizando sensores de nanocompósitos

Pós-graduação em Engenharia Mecânica - FEIS

Optical characterization of europium-doped indium hydroxide nanocubes obtained by Microwave-Assisted Hydrothermal method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Immobilization of uricase in layer-by-layer films used in amperometric biosensors for uric acid

The layer-by-layer technique was exploited to immobilize the enzyme uricase onto indium tin oxide substrates coated with a layer of Prussian Blue. Uricase layers were alternated with either poly(ethylene imine) or poly(diallyidimethylammoniumchloride), and the resulting films were used as amperometric biosensors for uric acid. Biosensors with optimum perfomance had a limit of detection of 0.15 mu A mu mol 1(-1) cm(-2) with a linear response between 0.1 and 0.6 mu M of uric acid, which is sufficient for use in clinical tests. Bioactivity was preserved for weeks, and there was negligible influence from interferents, as detection was carried out at 0.0 V vs saturated calomel electrode.

Phytase immobilization on modified electrodes for amperometric biosensing

Phytase (myo-inositol hexaphosphate phosphohydrolase) and phytic acid (myo-inositol hexaphosphate) play an important environmental role, in addition to being a health issue in food industry. Phytic acid is antinutritional due to its ability to chelate metal ions and may also react with proteins decreasing their bioavailability. In this work, we produced biosensors with phytase immobilized in Layer-by-Layer (LbL) films, which could detect phytic acid with a detection limit of 0.19 mmol L-1, which is sufficient to detect phytic acid in seeds of grains and vegetables. The biosensosrs consisted of LbL films containing up to eight bilayers of phytase alternated with poly(allylamine) hydrochloride (PAH) deposited onto an indium-tin oxide (ITO) substrate modified with Prussian Blue. Amperometric detection was conducted in an acetate buffer solution (at pH 5.5) at room temperature, with the biosensor response attributed to the formation of phosphate ions. In subsidiary experiments with the currents measured at 0.0 V (vs. SCE), we demonstrated the absence of effects from some interferents, pointing to a good selectivity of the biosensor. (c) 2007 Elsevier B.V. All rights reserved.

Molecular architecture and electrical properties in evaporated films of cobalt phthalocyanine

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Columnar microstructure of nanocrystalline Ga1-xMnxN films deposited by reactive sputtering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermodynamic and electronic study of Ga-1 _ xMnxN films. A theoretical study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis, characterization and thermal studies of solid state 4-methylbenzylidenepyruvate of some trivalent metal ions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Corrosion behavior of Ti-6Al-4V alloy treated by plasma immersion ion implantation process

Ti-6Al-4V alloy is one of the most frequently used Ti alloys with diverse applications in aerospace and biomedical areas due to its favorable mechanical properties, corrosion resistance and biocompatibility. Meanwhile, its surface can stiffer intense corrosion caused by wear processes due to its poor tribological properties. Thus in the present study, PIII processing of Ti-6Al-4V alloy was carried out to evaluate its corrosion resistance in 3.5% NaCl solution. Two different sets of Ti-6Al-4V samples were PIII treated, varying the plasma gases and the treatment time. The corrosion behavior is correlated with the surface morphology, and the nitrogen content. SEM micrographs of the untreated sample reveal a typical two-phase structure. PIII processing promotes surface sputtering and the surface morphology is completely different for samples treated with N-2/H-2 mixture and N-2 only. The highest penetration of nitrogen (similar to 88 nm), corresponding to 33% of N-2 was obtained for the sample treated with N-2/H-2 mixture for 1:30 h. The corrosion behavior of the samples was investigated by a potentiodynamic polarization method. A large passive region of the polarization curves (similar to 1.5 V), associated with the formation of a protective film, was observed for all samples. The passive current density (similar to 3 x 10(-6) A cm(-2)) of the PIII-treated Ti-6Al-4V samples is about 10 times higher than for the untreated sample. This current value is still rather low and maintains good corrosion resistance. The anodic branches of the polarization curves for all treated Ti-6Al-4V samples demonstrate also that the oxide films break down at approximately 1.6 V, forming an active region. Although the sample treated by N-2/H-2 mixture for 1.30 It has thicker nitrogen enriched layer, better corrosion resistance is obtained for the PIII process performed with N, gas only. (c) 2007 Elsevier B.V. All rights reserved.

Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation

Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N alone by plasma immersion ion implantation WHO were probed by a nanoindentor and analyzed by the contact-angle method to provide information on surface nanohardness and wettability. Silicon nitride and silicon carbide are important ceramic materials for microelectronics, especially for high-temperature applications. These compounds can be synthesized by high-dose ion implantation. The nanohardness of a silicon sample implanted with 12-keV nitrogen PIII (with 3 X 10(17) cm(-2) dose) increased by 10% compared to the unimplanted sample, in layers deeper than the regions where the formation of the Si,N, compound occurred. A factor of 2.5 increase in hardness was obtained for C-implanted Si wafer at 35 keV (with 6 X 10(17) cm(-2) dose), again deeper than the SiC-rich layer, Both compounds are in the amorphous state and their hardness is much lower than that of the crystalline compounds, which require an annealing process after ion implantation. In the same targets, the contact angle increased by 65% and 35% for N- and C-implanted samples, respectively. Compared to the Si target, the nitrogen PIII-irradiated Al 5052 (wish 15 keV) showed negligible change in its hydrophobic character after ion implantation. Its near-surface nanohardness measurement showed a slight increase for doses of 1 X 10(17) cm(-2). We have been searching for an AlN layer of the order of 1000 A thick, using such a low-energy PIII process, but oxide formation during processing has precluded its synthesis. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Enhanced corrosion resistance of AISI H13 steel treated by nitrogen plasma immersion ion implantation

Electrochemical corrosion measurements of AISI H13 steel treated by Pill process in 3.5% (wt) NaCl solution were investigated. So far the corrosion behavior of AISI H 13 steel by Pill has not been studied. The electrochemical results are correlated with the surface morphology, nitrogen content and hardness of the nitride layer. Ion implantation of nitrogen into H 13 steel was carried out by Pill technique. SEM examination revealed a generalized corrosion and porosity over all analyzed sample surfaces. Penetration of nitrogen reaching more than 20 gm was achieved at 450 degrees C and hardness as high as 1340 HV (factor of 2.7 enhancement over standard tempered and annealed H 13) was reached by a high power, 9 h Pill treatment. The corrosion behavior of the samples was studied by potentiodynamic polarization method. The noblest corrosion behavior was observed for the samples treated by PIII at 450 degrees C, during 9 h. Anodic branches of polarization curves of PIII processed samples show a passive region associated with the formation of a protective film. The passive region current density of PIII treated H13 samples (3.5 x 10(-6) A/cm(2)) is about 270 times lower than the one of untreated specimens, which demonstrates the higher corrosion resistance for the Pill treated H 13 samples. (c) 2007 Elsevier B.V. All rights reserved.

Effects of the high temperature plasma immersion ion implantation (PIII) of nitrogen in AISI H13 steel

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Modified LPE system used to diffuse Cd to obtain InSb infrared detectors

We are presenting here p/n junctions obtained with a modified opened liquid-phase epitaxy (LPE) system, used to diffuse indium antimonide (InSb) doped with Cd over InSb doped with Te wafers, in order to make InSb infrared (IR) sensors. This technique has several advantages: the diffusion can be performed in bigger substrate areas improving the device production; this method decreases the device manipulation, decreasing human mistakes and increasing the process reproducibility. The opened LPE in this work produced sensors in the first case with vapor of the diffusion material, coming from a microholed carbon boat full of the diffusion material, over which is positioned the substrate at atmospheric pressure. In the second, the diffusion material is on the bottom of a quartz recipient, and the InSb/Te wafer works as its cover, and vacuum was used. The IR sensors produced with the first method measured 8.9 x 10(7) cm Hz(1/2)/W as detectivity value and higher IR spectral response at 4.6 mu m, and those produced with the second 2.8 x 10(9) cm Hz(1/2)/W, at 4.4 mu m. Besides the electrical-optical properties, the structural properties of diffused layers were investigated by X-ray diffraction (XRD), scanning electron and atomic force microscopy (SEM, AFM), energy-dispersive and secondary ion mass spectroscopy (EDS, SIMS). (C) 2007 Elsevier B.V. All rights reserved.