Síntese hidrotérmica de nanopartículas de 'TI''O IND.2', de nanocompósitos metal/'TI''O IND.2' e degradação oxidativa de 4-clorofenol em reator membranar fotocatalítico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Storage moduli, loss moduli and damping factor of GaAs and Ga1-xMnxAs thin films using DMA 2980

The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1-xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45 degrees C <= T <= 70 degrees C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs <= 20% allow damping at temperature range of 45 degrees C <= T <= 70 degrees C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1-xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1-xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1-xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45 degrees C <= T <= 70 degrees C Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature. (C) 2013 Elsevier Ltd. All rights reserved.

Hopping-tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Origin of spin incommensurability in hole-doped S=1 Y2-xCaxBaNiO5 chains

Spin incommensurability (IC) has been recently experimentally discovered in the hole-doped Ni-oxide chain compound Y2-xCaxBaNiO5 [G. Xu et al., Science 289, 419 (2000)]. Here a two orbital model for this material is studied using computational techniques. Spin IC is observed in a wide range of densities and couplings. The phenomenon originates in antiferromagnetic correlations across holes dynamically generated to improve hole movement, as it occurs in the one-dimensional Hubbard model and in recent studies of the two-dimensional extended t-J model. The close proximity of ferromagnetic and phase-separated states in parameter space is also discussed.

Taxa de absorção atmosférica sobre as cidades de Botucatu-SP e Rio de Janeiro-RJ

O segundo satélite da Missão Espacial Completa Brasileira (SCD2/MECB) foi colocado em órbita em 23 de Outubro de 1998 e carrega a bordo um experimento de células solares. Célula solar de silício é um dispositivo semicondutor, que pode medir a intensidade da radiação visível e parte da radiação infravermelha (400-1100 nm). O experimento permite medir simultaneamente a insolação direta e parte da radiação solar que é refletida pela Terra para o espaço. Os dados do experimento célula solar são transmitidos em tempo real pela telemetria do satélite e recebidos pela estação terrestre em Cuiabá, MT-Brasil (16°S; 56°W). Este fato limita a cobertura espacial para um círculo sobre a América do Sul. O albedo planetário é obtido dentro desta cobertura e seus valores podem ser agrupados em períodos temporais (anual, sazonal ou mensal), ou podem ser estudados para várias localizações (latitude e longitude) durante a vida do satélite. O coeficiente de transmissão atmosférica ou índice de claridade (Kt), medido em estações meteorológicas na superfície da Terra, junto com o valor medido simultaneamente do albedo planetário, permite calcular o coeficiente de absorção atmosférica (Ka). O método desenvolvido neste trabalho para avaliar Ka considera que o albedo planetário é composto por duas partes: uma refletividade local e uma refletividade não local. Considerando este novo conceito, é definida uma taxa de absorção atmosférica (denominada Ra) que é a razão entre Ka e a potência de irradiância solar líquida, que não atravessou a atmosfera (100%-Kt). A taxa de absorção atmosférica assim definida é independente da cobertura de nuvens. O histograma de freqüência de Ra mostra os valores de 0,86±0,07 e 0,88±0,09 sobre as cidades de Botucatu-SP e do Rio de Janeiro-RJ, durante os anos de 1999 até 2006, respectivamente.

Electrical characterization of poly(amide-imide) for application in organic field effect devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Synthesis and structural characterization of Eu(III)-doped Zn7Sb2O12

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural, electronic structure and magnetic studies of SmFe1-xNixO3 (x <= 0.5)

We present the structural, electronic structure and magnetic studies of Ni doped SmFeO3. The X-ray diffraction (XRD) studies confirm the single phase nature of the samples having orthorhombic Pbnm structure and the unit-cell volume is decreasing with the increase of Ni concentration. X-ray absorption spectroscopy (XAS) studies on O K. Fe L-3.2, Ni L-3.2 and Sm M-5.4 edges of SmFe1-xNixO3 (x <= 0.5) samples along with the reference compounds revealed the homo-valence state of Fe and Ni in these materials. From magnetization studies it has been observed the materials exhibit ferromagnetic and anti-ferromagnetic sub-lattices, which are strongly dependent on the thermo-magnetic state of the system. (C) 2010 Elsevier B.V. All rights reserved.

Characterization of metallic electrical contacts to SnO2 thin films lightly doped with Eu3+ ions, and photo-induced resistivity

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural phase transition study of FePt alloys using ab initio calculation

The FePt alloy undergoes the cubic to tetragonal lattice transformation in the ferromagnetic state. We calculated the electronic structure for both cubic and tetragonal structures using the FPLAPW method with APW + lo. Comparing the density of states of the cubic and tetragonal structures, it is expected that the lattice transformation is caused by the band Jahn-Teller effect. (C) 2009 Elsevier B.V. All rights reserved.

Growth of Al2O3 thin film by oxidation of resistively evaporated Al on top of SnO2, and electrical properties of the heterojunction SnO2/Al2O3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structural and Electronic Effects of Incorporating Mn in TiO2 Films Grown by Sputtering: Anatase versus Rutile

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N films deposited by reactive sputtering

We have focused on the optical absorption edge of nanocrystalline Ga(1-x)Mn(x)N (0.00 <= x <= 0.18) films deposited by reactive RF magnetron sputtering. The films obtained are nanocrystalline with grain sizes of about 25 nm, having wurtzite structure and strong orientation texture in the c-axis direction. The optical characterizations of the absorption edges were obtained in the 190-2600 nm spectral range. The increase of the Mn content causes an increase of the absorption coefficient which can be clearly noticed at low energies, and a quasi-linear decrease of the optical gap. Broad absorption bands observed around similar to 1.3 and similar to 2.2 eV were associated with transitions between the Mn acceptor level and the valence and conduction bands, respectively. The observed changes in the optical properties due to the Mn incorporation observed in these nanocrystalline films are similar to those reported for ferromagnetic GaMnN single-crystal films.

Excitations and finite-size properties of an integrable supersymmetric electronic model

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Fast optical preparation, control, and readout of a single quantum dot spin

We propose and demonstrate the sequential initialization, optical control, and readout of a single spin trapped in a semiconductor quantum dot. Hole spin preparation is achieved through ionization of a resonantly excited electron-hole pair. Optical control is observed as a coherent Rabi rotation between the hole and charged-exciton states, which is conditional on the initial hole spin state. The spin-selective creation of the charged exciton provides a photocurrent readout of the hole spin state.