Influence of Sm3+ doping on the dielectric properties of CaCu3Ti4O12 ceramics synthesized via autocombustion

Ca-1 -xSmxCu3Ti4O12 (x = 0.0, 0.2, 03) electronic ceramics were fabricated via the chemical route using metal nitrate solutions in order to improve the dielectric properties of this ceramic. X-ray diffraction (XRD) analysis indicated the formation of a single CaCu3Ti4O12 (CCTO). Grain size of the samples doped with Sm3+ was in the range of 1-2 mu m, as opposed to 50-100 mu m in the pure samples of CCTO. The cutoff frequency with the doping was remarkably shifted, from 1 MHz (pure CCTO) to 10 MHz (doped CCTO). Meanwhile, the real dielectric (epsilon(r)) and imaginary dielectric (epsilon '') constants showed a decrease as the doping was increased. (C) 2013 Elsevier B.V. All rights reserved.

Effect of Fe-doping on the structural, microstructural, optical, and ferroeletric properties of Pb1/2Sr1/2Ti1-xFexO3 oxide prepared by spin coating technique

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electroanalytical determination of bumetanide employing a biomimetic sensor for detection of doping in sports

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Doping no esporte: uso de eritropoietina, propriedades, efeitos e detecção

A eritropoietina (EPO) é uma das drogas de uso proibido a atletas, segundo a lista anual da WADA. Este hormônio é uma proteína glicosilada com o potencial de estimular a eritropoiese, aumentando assim a quantidade de glóbulos vermelhos sanguíneos e indiretamente aumentando a capacidade de transporte de oxigênio aos tecidos. Os atletas, com este transporte incrementado, são beneficiados em esportes que exigem resistência física, tendo grande vantagem se comparados a atletas que não fizeram uso de eritropoietina... (O arquivo eletrônico não possui resumo completo)

Indirect doping of microstructures fabricated by two-photon polymerization with gold nanoparticles

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Effect of the iron doping on the thermal decomposition of the polymeric precursor for the titanium dioxide powder synthesis

The Polymeric Precursor Method has proved suitable for synthesizing reactive powders using low temperatures of calcination, especially when compared with conventional methods. However, during the thermal decomposition of the polymeric precursor the combustion event can be releases an additional heat that raises the temperature of the sample in several tens of degrees Celsius above the set temperature of the oven. This event may be detrimental to some material types, such as the titanium dioxide semiconductor. This ceramic material has a phase transition at around 600 ° C, which involves the irreversible structural rearrangement, characterized by the phase transition from anatase to rutile TiO2 phase. The control of the calcination step then becomes very important because the efficiency of the photocatalyst is dependent on the amount of anatase phase in the material. Furthermore, use of dopant in the material aims to improve various properties, such as increasing the absorption of radiation and in the time of the excited state, shifting of the absorption edge to the visible region, and increasing of the thermal stability of anatase. In this work, samples of titanium dioxide were synthesized by the Polymeric Precursor Method in order to investigate the effect of Fe (III) doping on the calcination stages. Thermal analysis has demonstrated that the Fe (III) insertion at 1 mol% anticipates the organic decomposition, reducing the combustion event in the final calcination. Furthermore, FTIR-PAS, XRD and SEM results showed that organic matter amount was reduced in the Fe (III)-doped TiO2 sample, which reduced the rutile phase amount and increased the reactivity and crystallinity of the powder samples.

Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution

Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

Al-doping effect on the surface morphology of zno films grown by reactive rf magnetron sputtering

Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm−3 to 2.6 × 1019 cm−3 . The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

Doping e suplementação no MMA: um estudo documental de caso

The first records of the use of substances that enhance athletic performance began in antiquity. The objective of this study is to analyze the use of doping methods and supplements by amateur athletes and MMA professionals and what motivates usage. The work consisted of desk research in which use of work carried out at fifteen amateur and professional athletes, which underwent a data collection; these athletes are all over eighteen years old, male and practicing MMA for at least two years. The questionnaire that they were submitted corresponded to ten multiple-choice questions, which are: Age, what type of fight practiced as a basis for MMA, how long practices martial arts, sees the sport of competitive or recreational way, has already made use dietary supplements, have made use of banned substances (steroids) in the sport, it has already made use of steroids which the substance used and to what end was done using, know the side effects of anabolic steroids, know one or more people who have already made use of steroids in order to increase their performance in the fight, he believes it is possible an athlete achieve success in modern MMA without the use of anabolic steroids. The results showed that, of the fifteen athletes interviewed, only two said they never made use of dietary supplements, and four said they have already made use of anabolic steroids. All fifteen athletes claim to know the side effects of steroid use, and 14 of them say they know one or more sport-mates who have already made use of steroids. Given the results, it can be concluded that the use of steroids is common in MMA

Dependence of the electrical conductivity and elastomeric properties on sample preparation of blends of polyaniline and natural rubber

Blend films (free-standing) containing 20% in volume of polyaniline (PANI) in 80% of natural rubber (NR) were fabricated by casting in three different ways: (1) adding PANI-EB (emeraldine base) dissolved in N-methyl-2-pyrrolidone (NMP) to the latex (NRL), (2) adding PANI-EB dissolved in in-cresol to NR dissolved in xylol (NRD), (3) overlaying the surface of a pure NR cast film with a PANI layer grown by in situ polymerization (NRO). All the films were immersed into HCl solution to achieve the primary doping (protonation) of PANI before the characterization. The main goal here was to investigate the elastomeric and electrical conductivity properties for each blend, which may be applied as pressure and deformation sensors in the future. The characterization was carried out by optical microscopy, dc conductivity, vibrational spectroscopy (infrared absorption and Raman scattering), thermogravimetry analysis (TGA), differential scanning calorimetry (DSC), dynamic mechanical thermal analysis (DMTA), and tensile stress-strain curves. The results suggest that the NRL blend is the most suitable in terms of mechanical and electrical properties required for applications in pressure and deformation sensors: a gain of conductivity without losing the elastomeric property of the rubber. (c) 2005 Wiley Periodicals, Inc.

Dispositivos flexíveis de monitoramento de pH e de deflexão mecânica à base de polianilina

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Separating interface state response from parasitic effects in conductance measurements on organic metal-insulator-semiconductor capacitors

A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the features observed in a MIS capacitor fabricated using regioregular poly(3-hexylthiophene) as the active semiconductor and polysilsesquioxane as the gate insulator. In particular, it shows that when the capacitor is driven into accumulation, the parasitic transistor formed by the guard ring and Ohmic contact can give rise to an additional feature in the admittance-voltage plot that could be mistaken for interface states. When this artifact and underlying losses in the bulk semiconductor are accounted for, the remaining experimental feature, a peak in the loss-voltage plot when the capacitor is in depletion, is identified as an interface (or near interface) state of density of similar to 4 x 10(10) cm(-2) eV(-1). Application of the model shows that exposure of a vacuum-annealed device to laboratory air produces a rapid change in the doping density in the channel region of the parasitic transistor but only slow changes in the bulk semiconductor covered by the gold Ohmic contact. (C) 2008 American Institute of Physics.

Study of the potentiometric response of the doped spinel Li1.05Al0.02Mn1.98O4 for the optimization of a selective lithium ion sensor

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Thermal inkjet printing of polyaniline on paper

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nanostructured hybrid films containing nanophosphor: Fabrication and electronic spectral properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)