Deposition of Al2O3 by resistive evaporation and thermal oxidation of Al to be applied as a transparent FET insulating layer

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation by means of annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 °C is responsible for reasonable oxidation, which is accelerated up to 8 times for O2-rich atmosphere. Results of surface electrical resistivity and Raman spectroscopy are in good agreement with these findings. Surprisingly, X-ray and Raman data suggest also the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. © 2013 Elsevier Ltd and Techna Group S.r.l.

Evaluation of bond strength and thickness of adhesive layer according to the techniques of applying adhesives in composite resin restorations

Adhesive restorations have increasingly been used in dentistry, and the adhesive system application technique may determine the success of the restorative procedure. The aim of this study was to evaluate the influence of the application technique of two adhesive systems (Clearfil SE Bond and Adper Scotchbond MultiPurpose) on the bond strength and adhesive layer of composite resin restorations. Eight human third molars were selected and prepared with Class I occlusal cavities. The teeth were restored with composite using various application techniques for both adhesives, according to the following groups (n = 10): group 1 (control), systems were applied and adhesive was immediately light activated for 20 seconds without removing excesses; group 2, excess adhesive was removed with a gentle jet of air for 5 seconds; group 3, excess was removed with a dry microbrush-type device; and group 4, a gentle jet of air was applied after the microbrush and then light activation was performed. After this, the teeth were submitted to microtensile testing. For the two systems tested, no statistical differences were observed between groups 1 and 2. Groups 3 and 4 presented higher bond strength values compared with the other studied groups, allowing the conclusion that excess adhesive removal with a dry micro-brush could improve bond strength in composite restorations. Predominance of adhesive fracture and thicker adhesive layer were observed via scanning electron microscopy (SEM) in groups 1 and 2. For groups 3 and 4, a mixed failure pattern and thinner adhesive layer were verified. Clinicians should be aware that excess adhesive may negatively affect bond strength, whereas a thin, uniform adhesive layer appears to be favorable. (Quintessence Int 2013;44:9-15)

Enhancement of quality and stability of dried papaya by pectin-based coatings as air-drying pretreatment

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Burning Graphene Layer-by-Layer

Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in "cold-wall" reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material.

Al2O3 obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.