Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effect of Composition on the Physical Properties at Nanoscale of PZT Thin Films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sn(1-x)LaxO2 thin films deposited on AISI 304 stainless steel substrates

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Measurements of labile Cd, Cu, Ni, Pb, and Zn levels at a northeastern Brazilian coastal area under the influence of oil production with diffusive gradients in thin films technique (DGT)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Determination of mercury in river water by diffusive gradients in thin films using P81 membrane as binding layer

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparation of TiO2/SnO2 Thin Films by Sol-Gel Method and Periodic B3LYP Simulations

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Processing and structural properties of random oriented lead lanthanum zirconate titanate thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Physical properties of self-polarized PZT thin films at compositions around the morphotropic phase boundary

The physical properties of self-polarized PbZr1-xTixO3 thin films with no preferential orientation in a range of compositions 0.46 <= x <= 0.50 were investigated. Structural analysis revealed the coexistence of monoclinic-tetragonal and monoclinic-rhombohedral phases at compositions 0.46 <= x <= 0.49, where the monoclinic phase was in the majority and both the tetragonal and the rhombohedral phases in the minority. The dielectric permittivity (epsilon'= 447) reached its maximum at around composition x = 0.48. Asymmetries in the macroscopic and local hysteresis loops confirmed the existence of the self-polarization effect in the studied films.

Morphological and electrical evolution of ZnO:Al thin films deposited by rf magnetron sputtering onto glass substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thin films produced on 5052 aluminum alloy by plasma electrolytic oxydation with red mud-containing electrolytes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75 Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films. © 2006 Trans Tech Publications, Switzerland.

Dielectric properties of Sr0.75Ba0.25Nb 2O6 thin films: Bias field, frequency and temperature dependence

Ferroelectric strontium barium niobate solid solutions had received great attention due to their excellent pyroelectric, electrooptic and photorefractive properties. Furthermore, they usually also present very interesting phase transition characteristics. In this work, polycrystalline single phase Sr 0.75 Ba 0.25 Nb 2 O 6 thin films were prepared by a hybrid chemical method and deposited on Pt/Ti/SiO 2 /Si substrates. The temperature dependence of dielectric constant was measured at different frequencies and bias field levels. The presence of two dielectric dispersion regions with relaxor characteristics was observed at distinct temperature ranges, corresponding to the ferro-paraelectric and to a structural phase transition at low temperatures, respectively. A specific dielectric dispersion region, associated with an incommensurate superstructure frequently observed in bulk samples, was not observed in this films probably due to their small grain sizes. © 2002 Taylor & Francis.